Ordering number : EN8994B
FW217A
N-Channel Power MOSFET
35V, 6A, 39m
Ω
, Dual SOIC8
Features
•
•
•
•
http://onsemi.com
On-state resistance RDS(on)1=30m
Ω
(typ.)
4.5V drive
Halogen free compliance
Protection Diode in
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10s)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
IDP
PD
PT
Tch
Tstg
Duty cycle≤1%
Duty cycle≤1%
When mounted on ceramic substrate (2000mm
×0.8mm)
1unit, PW≤10s
When mounted on ceramic substrate (2000mm
×0.8mm),
PW≤10s
2
2
Conditions
Ratings
35
±20
6
6.5
24
1.8
2.2
150
-
-55 to +150
Unit
V
V
A
A
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7072-001
FW217A-TL-2W
5
0.22
Product & Package Information
• Package
: SOIC8
• JEITA, JEDEC
: SC-87, SOT-96
• Minimum Packing Quantity : 2,500 pcs./reel
4.9
8
Packing Type : TL
Marking
0.375
1
1.27
4
0.445
0.254
(GAGE PLANE)
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SOIC8
FW217
TL
6.0
3.9
0.715
A
LOT No.
Electrical Connection
8
7
6
5
1.375
0.175
1.55
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
61312 TKIM/31412 TKIM/22212PA TKIM TC-00002682 No.8994-1/7
FW217A
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=6A, VGS=0V
VDS=20V, VGS=10V, ID=6A
See specified Test Circuit.
VDS=20V, f=1MHz
Conditions
ID=1mA, VGS=0V
VDS=35V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=6A
ID=6A, VGS=10V
ID=3A, VGS=4.5V
Ratings
min
35
1
±10
1.7
3
30
50
470
70
35
8
34
31
30
10
2
2
0.84
1.2
39
70
2.6
typ
max
Unit
V
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
VIN
VDD=20V
10V
0V
VIN
PW=10μs
D.C.≤1%
G
D
ID=6A
RL=3Ω
VOUT
P.G
FW217A
50Ω
S
Ordering Information
Device
FW217A-TL-2W
Package
SOIC8
Shipping
2,500pcs./reel
memo
Pb Free and Halogen Free
No.8994-2/7
FW217A
6
ID -- VDS
16.0V
10.0V
10
ID -- VGS
VDS=10V
4.5
V
4.0
V
6.0V
3.5V
Drain Current, ID -- A
9
8
7
6
5
4
3
2
5
Drain Current, ID -- A
4
3
Ta=75
°
C
0
3.0V
2
1
VGS=2.5V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1
0
1
2
3
4
5
IT16779
0
Drain-to-Source Voltage, VDS -- V
100
RDS(on) -- VGS
IT16778
100
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
Ta=25
°
C
ID=3A
6A
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
80
80
60
60
=
VGS
40
A
=3.0
V, I D
4.5
40
=6.0A
.0V, I D
=10
V GS
20
20
0
0
2
4
6
8
10
12
14
16
0
--60
--40
--20
0
20
40
25
°
C
60
80
--25
°
C
100
120
140
160
Gate-to-Source Voltage, VGS -- V
10
|
y
fs
|
-- ID
IT16780
10
7
5
3
2
Ambient Temperature, Ta --
°
C
IS -- VSD
IT16781
Forward Transfer Admittance,
|
y
fs
|
-- S
7
5
3
2
VDS=10V
VGS=0V
25
°
C
5
°
--2
=
Ta
°
C
75
C
1.0
7
5
Ta=7
5
°
C
25
°
C
0
0.2
0.4
0.6
1.0
7
5
3
2
0.1
0.01
3
2
0.1
7
5
3
2
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Drain Current, ID -- A
100
7
SW Time -- ID
td(off)
tf
5 7 10
IT16784
0.01
--25
°
C
0.8
1.0
1.2
IT16783
VDD=20V
1000
7
5
Ciss, Coss, Crss -- VDS
Ciss
Diode Forward Voltage, VSD -- V
f=1MHz
Switching Time, SW Time -- ns
5
3
2
Ciss, Coss, Crss -- pF
3
2
10
7
5
3
2
1.0
0.1
td(on)
tr
100
7
5
3
2
10
Coss
Crss
2
3
5
7
1.0
2
3
5
Drain Current, ID -- A
10
IT16784
7
0
5
10
15
20
25
30
35
IT16785
Drain-to-Source Voltage, VDS -- V
No.8994-3/7
FW217A
10
9
VGS -- Qg
VDS=10V
ID=4.5A
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
IT16786
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
ASO
IDP=24A(PW
≤
10
μs)
10
ID=6A
10
DC
op
10
s
er
ati
on
10
1m
0
μ
s
m
0m
s
s
s
Operation in this
area is limited by RDS(on).
0.01
0.01
Ta=25°C
Single pulse
1unit
When mounted on ceramic substrate (2000mm
2
×0.8mm)
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
Total Gate Charge, Qg -- nC
2.4
PD -- Ta
Drain-to-Source Voltage, VDS -- V
Allowable Power Dissipation(FET1), PD -- W
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
PD (FET1) -- PD (FET2)
5 7 100
IT16787
Allowable Power Dissipation, PD -- W
2.2
2.0
1.8
1.6
When mounted on ceramic substrate
(2000mm
2
×0.8mm),
PW≤10s
When mounted on ceramic substrate
(2000mm
2
×0.8mm),
PW≤10s
tal
To
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
ip
ss
di
on
ati
ni
t
75
100
125
150
175
IT16789
1u
2.2
2.4
Ambient Temperature, Ta --
°C
Allowable Power Dissipation(FET2), PD -- W
IT16790
Taping Specification
FW217A-TL-2W
No.8994-4/7
FW217A
• • • •• •• •• •
Feed D i rec t ion
No.8994-5/7
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