PD - 97577
INSULATED GATE BIPOLAR TRANSISTOR
Features
•
•
•
•
•
•
•
•
•
Low V
CE (ON)
Trench IGBT Technology
Low Switching Losses
Maximum Junction Temperature 175 °C
5
μS
short circuit SOA
Square RBSOA
100% of The Parts Tested for I
LM
Positive V
CE (ON)
Temperature Coefficient
Tight Parameter Distribution
Lead Free Package
IRGP4066PbF
IRGP4066-EPbF
C
V
CES
= 600V
I
C(Nominal)
= 75A
G
E
t
SC
≥
5μs, T
J(max)
= 175°C
n-channel
V
CE(on)
typ. = 1.7V
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to
Low V
CE (ON)
and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
C
E
C
G
TO-247AC
IRGP4066PbF
C
E
C
G
TO-247AD
IRGP4066-EPbF
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
NOMINAL
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, V
GE
= 15V
Clamped Inductive Load Current, V
GE
= 20V
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Max.
600
140
90
75
225
300
±20
±30
454
227
-55 to +175
Units
V
c
A
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Thermal Resistance Junction-to-Case
f
Min.
–––
–––
–––
Typ.
–––
0.24
–––
Max.
0.33
–––
40
Units
°C/W
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
1
www.irf.com
10/8/2010
IRGP4066PbF/IRGP4066-EPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
ΔV
(BR)CES
/ΔT
J
Min.
600
—
—
—
—
4.0
—
—
—
—
—
Typ.
—
260
1.7
2.0
2.1
—
-16
50
1.0
1040
—
Max.
—
—
2.1
—
—
6.5
—
—
100
—
±200
Units
V
Conditions
V
GE
= 0V, I
C
= 100μA
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
e
d
= 150°C
d
= 175°C
d
mV/°C V
GE
= 0V, I
C
= 2.0mA (25°C-175°C)
I
C
= 75A, V
GE
= 15V, T
J
= 25°C
V
V
V
I
C
= 75A, V
GE
= 15V, T
J
I
C
= 75A, V
GE
= 15V, T
J
V
CE
= V
GE
, I
C
= 2.1mA
V
CE(on)
V
GE(th)
ΔV
GE(th)
/ΔTJ
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
gfe
I
CES
I
GES
mV/°C V
CE
= V
GE
, I
C
= 2.1mA (25°C - 175°C)
V
CE
= 50V, I
C
= 75A, PW = 60μs
S
μA
nA
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
150
40
60
2465
2155
4620
50
70
200
60
3870
2815
6685
50
70
240
70
4440
245
130
Max.
225
60
90
3360
3040
6400
70
90
225
80
—
—
—
—
—
—
—
—
—
—
Units
I
C
= 75A
nC
V
GE
= 15V
V
CC
= 400V
Conditions
I
C
= 75A, V
CC
= 400V, V
GE
= 15V
μJ
R
G
= 10Ω, L = 200μH, T
J
= 25°C
Energy losses include tail & diode reverse recovery
I
C
= 75A, V
CC
= 400V, V
GE
= 15V
ns
R
G
= 10Ω, L = 200μH, T
J
= 25°C
I
C
= 75A, V
CC
= 400V, V
GE
=15V
μJ
R
G
=10Ω, L=200μH,T
J
= 175°C
Energy losses include tail & diode reverse recovery
I
C
= 75A, V
CC
= 400V, V
GE
= 15V
ns
R
G
= 10Ω, L = 200μH
T
J
= 175°C
pF
V
GE
= 0V
V
CC
= 30V
f = 1.0Mhz
T
J
= 175°C, I
C
= 300A
V
CC
= 480V, Vp = 600V
Rg = 10Ω, V
GE
= +20V to 0V
FULL SQUARE
5
—
—
μs
V
CC
= 400V, Vp
600V
Rg = 10Ω, V
GE
= +15V to 0V
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 10μH, R
G
= 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
R
θ
is measured at T
J
of approximately 90°C.
2
www.irf.com
IRGP4066PbF/IRGP4066-EPbF
140
120
100
400
300
Ptot (W)
25
50
75
100
T C (°C)
125
150
175
IC (A)
80
60
40
20
0
200
100
0
25
50
75
100
T C (°C)
125
150
175
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
1000
Fig. 2
- Power Dissipation vs. Case
Temperature
1000
100
100μsec 10μsec
100
1msec
IC (A)
10
DC
IC (A)
10
1
100
1000
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
VCE (V)
10
100
VCE (V)
1000
Fig. 3
- Forward SOA
T
C
= 25°C, T
J
≤
175°C; V
GE
=15V
300
250
200
ICE (A)
Fig. 4
- Reverse Bias SOA
T
J
= 175°C; V
GE
=20V
300
250
200
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 18V
VGE = 15V
150
100
50
0
0
2
4
6
ICE (A)
10
VGE = 12V
VGE = 10V
VGE = 8.0V
150
100
50
0
8
0
2
4
6
8
10
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp =
≤
60μs
VCE (V)
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp =
≤
60μs
VCE (V)
www.irf.com
3
IRGP4066PbF/IRGP4066-EPbF
300
250
200
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
20
18
16
14
150
100
50
0
0
2
4
6
8
10
VCE (V)
ICE (A)
12
10
8
6
4
2
0
5
10
VGE (V)
ICE = 38A
ICE = 75A
ICE = 150A
15
20
VCE (V)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp =
≤
60μs
20
18
16
14
Fig. 8
- Typical V
CE
vs. V
GE
T
J
= -40°C
20
18
16
14
VCE (V)
10
8
6
4
2
0
5
10
ICE = 38A
ICE = 75A
VCE (V)
12
12
10
8
6
4
2
0
ICE = 38A
ICE = 75A
ICE = 150A
ICE = 150A
15
VGE (V)
20
5
10
VGE (V)
15
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= 25°C
300
IC, Collector-to-Emitter Current (A)
12000
10000
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 175°C
250
200
150
100
50
0
4
6
T J = 25°C
T J = 175°C
Energy (μJ)
8000
EON
6000
4000
2000
0
EOFF
8
10
12
14
16
18
0
25
50
75
IC (A)
100
125
150
VGE, Gate-to-Emitter Voltage (V)
Fig. 11
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 60μs
Fig. 12
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 200μH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
4
www.irf.com
IRGP4066PbF/IRGP4066-EPbF
1000
11000
tdOFF
9000
Swiching Time (ns)
100
tF
Energy (μJ)
7000
EON
EOFF
3000
5000
tdON
tR
10
0
50
IC (A)
100
150
1000
0
25
50
Rg (Ω)
75
100
Fig. 13
- Typ. Switching Time vs. I
C
T
J
= 175°C; L = 200μH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
10000
Fig. 14
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 200μH; V
CE
= 400V, I
CE
= 75A; V
GE
= 15V
20
Tsc
800
15
Swiching Time (ns)
1000
600
Time (μs)
tdOFF
tF
100
tR
tdON
10
0
20
40
60
RG (Ω)
80
100
120
Current (A)
Isc
10
400
5
200
0
8
10
12
14
16
18
VGE (V)
0
Fig. 15
- Typ. Switching Time vs. R
G
T
J
= 175°C; L = 200μH; V
CE
= 400V, I
CE
= 75A; V
GE
= 15V
10000
Cies
Fig. 16
- V
GE
vs. Short Circuit Time
V
CC
= 400V; T
C
= 25°C
Capacitance (pF)
1000
100
Coes
Cres
10
0
100
200
300
400
500
VCE (V)
Fig. 17
- Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
www.irf.com
5
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
