25AA010A/25LC010A
25AA020A/25LC020A
25AA040A/25LC040A
25AA080A/25LC080A
25AA080B/25LC080B
25AA160A/25LC160A
25AA160B/25LC160B
25AA320A/25LC320A
25AA640A/25LC640A
25AA128/25LC128
25AA256/25LC256
25AA512/25LC512
25AA1024/25LC1024
SPI Serial EEPROM Family Data Sheet
Features:
• Max Clock Speed
- 10 MHz (1K-256K)
- 20 MHz (512K-1M)
• Byte and Page-level Write Operations
• Low-power CMOS Technology
- Typical Write current:
5 mA
- Typical Read current:
5 mA @ 10 MHz
7 mA @ 20 MHz
- Typical Standby current: 1
μA
• Write Cycle Time: 5 ms max.
6 ms max. (25XX1024)
• Self-timed Erase and Write Cycles
• Erase Functions (512K-1M)
- Page Erase: 6 ms max.
- Sector Erase: 15 ms max.
- Chip Erase: 15 ms max.
• Built-in Write Protection
- Power on/off data protection circuitry
- Write enable latch
- Write-protect pin
• Block/Sector Write Protection
- Protect none, 1/4, 1/2 or all of array
• Sequential Read
• High Reliability
- Data retention: > 200 years
- ESD protection: > 4000V
- Endurance > 1M Erase/Write Cycles
• Available in Standard 8-pin and 6-pin Packages
• Temperature Ranges Supported:
- Industrial (I): -40°C to +85°C
- Automotive (E): -40°C to +125°C
Pin Function Table
Name
CS
SO
WP
V
SS
SI
SCK
HOLD
V
CC
Chip Select
Serial Data Output
Write-Protect
Ground
Serial Data Input
Serial Clock Input
Hold Input
Supply Voltage
CS 1
SO 2
WP 3
V
SS
4
Description:
Microchip Technology Inc. supports the Serial Periph-
eral Interface (SPI) compatible serial bus architecture
with low-voltage serial Electrically Erasable PROMs
(EEPROM) that range in density from 1 Kbits up to 1
Mbits. Byte-level and page-level functions are sup-
ported, but the higher density 512 Kbit and 1 Mbit
devices also feature Sector and Chip erase functions
typically associated with Flash-based products.
The bus signals required are a clock input (SCK) plus
separate data in (SI) and data out (SO) lines. Access to
the device is controlled through a Chip Select (CS)
input.
Communication to the device can be paused via the
hold pin (HOLD). While the device is paused, transi-
tions on its inputs will be ignored, with the exception of
Chip Select, allowing the host to service higher priority
interrupts.
The entire series of SPI compatible devices are avail-
able in the standard 8-lead PDIP and SOIC pack-
ages, as well as the more advanced packages such
as the 8-lead TSSOP, MSOP, 2x3 DFN, 5x6 DFN and
6-lead SOT-23. All packages are RoHS compliant
with a Pb-free (Matte Tin) finish.
Pin Diagrams (not to scale)
TSSOP/MSOP
(ST, MS)
CS
SO
WP
V
SS
1
2
3
4
8
7
6
5
V
CC
HOLD
SCK
SI
PDIP/SOIC
(P, SN, SM)
CS
SO
WP
V
SS
1
2
3
4
8
7
6
5
V
CC
HOLD
SCK
SI
SOT-23
(OT)
SCK
V
SS
SI
1
2
3
6
5
4
V
DD
CS
SO
DFN
(MC)
CS 1
SO 2
WP 3
V
SS
4
8 V
CC
7 HOLD
6 SCK
5 SI
Function
DFN
(MF)
8
7
6
5
V
CC
HOLD
SCK
SI
©
2007 Microchip Technology Inc.
Preliminary
DS22040A-page 1
25AAXXXX/25LCXXXX
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(†)
V
CC
.............................................................................................................................................................................6.5V
All inputs and outputs w.r.t. V
SS
..........................................................................................................-0.6V to V
CC
+1.0V
Storage temperature ...............................................................................................................................-65°C to +150°C
Ambient temperature under bias.............................................................................................................-40°C to +125°C
ESD protection on all pins.......................................................................................................................................... 4 kV
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at those or any other conditions
above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
Note:
This is an overview of AC and DC Characteristics. Please refer to the device data sheet for production
specs.
TABLE 1-1:
DC CHARACTERISTICS
Electrical Characteristics:
Industrial (I):
V
CC
= +1.8V to 5.5V
+85°C
Automotive (E):
V
CC
= +2.5V to 5.5V
125°C
Characteristic
High-level input voltage
Low-level input voltage
Low-level output voltage
High-level output voltage
Input leakage current
Output leakage current
Internal capacitance (all
inputs and outputs)
Min.
.7 V
CC
-0.3
-0.3
—
—
V
CC
-0.5
—
—
—
—
2.5
0.5
—
0.16
0.15
Max.
V
CC
+ 1
0.3 V
CC
0.2 V
CC
0.4
0.2
—
±1
±1
7
10
5
6
2.5
7
5
5
3
20
12
5
1
1
Units
V
V
V
V
V
V
μA
μA
pF
mA
mA
mA
mA
μA
V
CC
≥
2.7V
(Note 1)
V
CC
≥
2.7V
(Note 1)
I
OL
= 2.1 mA, V
CC
= 4.5V
I
OL
= 1.0 mA, V
CC
= 2.5V
I
OH
= -400
μA
CS = V
CC
, V
IN
= V
SS
or V
CC
T
A
= 25°C, CLK = 1.0 MH
Z
,
V
CC
= 5.0V
(N
OTE
1)
T
A
= -40°C to
T
A
= -40°C to
DC CHARACTERISTICS
Param.
No.
D001
D002
D003
D004
D005
D006
D007
D008
D009
D010
Sym.
V
IH
V
IL
V
IL
V
OL
V
OL
V
OH
I
LI
I
LO
C
INT
I
CC
Read
Test Conditions
Densities
All
All
All
All
All
All
All
All
CS = V
CC
, V
OUT
= V
SS
or V
CC
All
V
CC
= 5.5V; F
CLK
= 20.0 MHz; 512K and 1M
Vcc = 2.5V; F
CLK
= 10.0 MHz
V
CC
= 5.5V; F
CLK
= 10.0 MHz; 1K-256K
Vcc = 2.5V; F
CLK
= 5.0 MHz
V
CC
= 5.5V
Vcc = 2.5V
V
CC
= 5.5V
V
CC
= 2.5V
CS = V
CC
= 5.5V, 125°C
CS = V
CC
= 5.5V, 85°C
(Inputs tied to V
CC
or V
SS
)
CS = V
CC
= 5.5V, 125°C
CS = V
CC
= 5.5V, 85°C
(Inputs tied to V
CC
or V
SS
)
CS = V
CC
= 5.5V
(Inputs tied to V
CC
or V
SS
)
512K and 1M
1K-256K
512K and 1M
Operating current
D011
I
CC
W
RITE
D012
I
CCS
Standby current
—
—
μA
1K-256K
D13
Note 1:
I
CCSPD
Deep power-down current
—
μA
512K and 1M
This parameter is periodically sampled and not 100% tested.
©
2007 Microchip Technology Inc.
Preliminary
DS22040A-page 3
25AAXXXX/25LCXXXX
TABLE 1-2:
AC CHARACTERISTICS (CONTINUED)
Electrical Characteristics:
Industrial (I):
V
CC
= +1.8V to 5.5V T
A
= -40°C to +85°C
Automotive (E): V
CC
= +2.5V to 5.5V T
A
= -40°C to 125°C
Min.
25
50
250
50
100
150
10
T
LO
Clock low time
25
50
250
50
100
150
11
12
13
T
CLD
T
CLE
T
V
Clock delay time
Clock enable time
Output valid from
clock low
50
50
—
Max.
—
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
4.5
≤
V
CC
≤
5.5
2.5
≤
V
CC
<
4.5
1.8
≤
V
CC
<
2.5
4.5
≤
V
CC
≤
5.5
2.5
≤
V
CC
<
4.5
1.8
≤
V
CC
<
2.5
4.5
≤
V
CC
≤
5.5
2.5
≤
V
CC
<
4.5
1.8
≤
V
CC
<
2.5
4.5
≤
V
CC
≤
5.5
2.5
≤
V
CC
<
4.5
1.8
≤
V
CC
<
2.5
4.5
≤
V
CC
≤
5.5
2.5
≤
V
CC
<
4.5
1.8
≤
V
CC
<
2.5
4.5
≤
V
CC
≤
5.5
2.5
≤
V
CC
<
4.5
1.8
≤
V
CC
<
2.5
4.5
≤
V
CC
≤
5.5
2.5
≤
V
CC
<
4.5
1.8
≤
V
CC
<
2.5
4.5
≤
V
CC
≤
5.5
2.5
≤
V
CC
<
4.5
1.8
≤
V
CC
<
2.5
Conditions
4.5
≤
V
CC
≤
5.5
2.5
≤
V
CC
<
4.5
1.8
≤
V
CC
<
2.5
4.5
≤
V
CC
≤
5.5
2.5
≤
V
CC
<
4.5
1.8
≤
V
CC
<
2.5
4.5
≤
V
CC
≤
5.5
2.5
≤
V
CC
<
4.5
1.8
≤
V
CC
<
2.5
4.5
≤
V
CC
≤
5.5
2.5
≤
V
CC
<
4.5
1.8
≤
V
CC
<
2.5
Densities
512K and 1M
AC CHARACTERISTICS
Param.
No.
9
Sym.
T
HI
Characteristic
Clock high time
—
1K-256K
—
512K and 1M
—
—
—
25
50
250
50
100
160
—
25
50
250
40
80
160
—
1K-256K
All
All
512K and 1M
—
1K-256K
14
15
T
HO
T
DIS
Output hold time
(Note 1)
Output disable
time
(Note 1)
0
—
512K and 1M
—
1K-256K
16
T
HS
HOLD setup time
10
20
100
20
40
80
512K and 1M
—
1K-256K
17
T
HH
HOLD Hold time
10
20
100
20
40
80
—
512K and 1M
—
1K-256K
Note 1:
This parameter is periodically sampled and not 100% tested.
2:
This parameter is not tested but established by characterization and qualification. For
endurance estimates in a specific application, please consult the Total Endurance™
Model, which can be obtained from Microchip’s web site: www.microchip.com.
3:
Includes T
HI
time.
©
2007 Microchip Technology Inc.
Preliminary
DS22040A-page 5
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