Ordering number : ENA0661A
EMH1303
P-Channel Power MOSFET
–12V, –7A, 23m
Ω
, Single EMH8
Features
•
•
•
http://onsemi.com
Low ON-resistance
1.8V drive
Protection diode in
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
Mounted on a ceramic board (1200mm
2
×0.8mm)
Conditions
Ratings
--12
±10
-
-7
--28
1.5
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7045-001
EMH1303-TL-E
Product & Package Information
• Package
: EMH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
0.2
0.2
8
5
0.125
Taping Type : TL
Marking
JC
TL
1.7
2.1
Lot No.
1
0.5
2.0
4
0.2
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
EMH8
Electrical Connection
8
7
6
5
0.05
0.75
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/O2407PE TIIM TC-00000967 No. A0661-1/7
EMH1303
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS1
IDSS2
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=--7A, VGS=0V
VDS=--6V, VGS=--4.5V, ID=--7A
See specified Test Circuit.
VDS=--6V, f=1MHz
Conditions
ID=--1mA, VGS=0V
VDS=--8V, VGS=0V
VDS=--12V, VGS=0V
VGS=±8V, VDS=0V
VDS=--6V, ID=--1mA
VDS=--6V, ID=--3A
ID=--6A, VGS=--4.5V
ID=--6A, VGS=--2.5V
ID=--0.5A, VGS=--1.8V
--0.4
7.2
12
18
27
40
1100
350
265
11
165
100
105
12.0
1.9
2.9
-
-0.8
-
-1.2
23
36
65
Ratings
min
--12
--1
-
-10
±10
-
-1.2
typ
max
Unit
V
μA
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
VIN
0V
--4.5V
VIN
VDD= --6V
ID= --3A
RL=2Ω
VOUT
D
PW=10μs
D.C. 1%
G
EMH1303
P.G
50Ω
S
Ordering Information
Device
EMH1303-TL-E
Package
EMH8
Shipping
3,000pcs./reel
memo
Pb Free
No. A0661-2/7
EMH1303
--2.5
--4.0V V
--6
ID -- VDS
--8.0V
--1.8
V
--10
--9
--8
ID -- VGS
VDS= --6V
--5
--6.
--4.5V
0V
Drain Current, ID -- A
Drain Current, ID -- A
--4
--7
--6
--5
--4
--3
--2
--1
.5V
V GS= --1
--3
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
0
0
--0.5
--1.0
--1.5
--2.0
--2.5
IT12937
Drain-to-Source Voltage, VDS -- V
80
IT12936
80
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
Ta=25
°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
70
60
50
40
30
20
10
0
0
--1
--2
--3
--4
--5
--6
--7
--8
70
60
50
40
30
20
10
0
--60
ID= --0.5A
--6A
0.5A
I = --
1.8V, D
--
V GS=
A
I = --6
--2.5V, D
V GS=
= --6A
4.5V, I D
V GS= --
--40
--20
0
20
25
°
C
--1
Ta=7
5
°
C
--2
--25
°
C
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
5
IT12938
--10
7
5
3
2
Ambient Temperature, Ta --
°C
IT12939
⏐
y
fs⏐ -- ID
IS -- VSD
VGS=0V
Forward Transfer Admittance,
⏐
y
fs⏐ -- S
3
2
VDS= --6V
7
5
3
2
7
1.0
7
5
3
2
0.1
--0.01
--0.01
7
5
3
2
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT12941
--0.001
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Drain Current, ID -- A
2
1000
5 7 --10
IT12940
5
3
2
SW Time -- ID
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
VDD= --6V
VGS= --4.5V
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
7
5
3
2
100
7
5
3
2
Ta=
7
0
--2
--4
C
5
°
25
--0.1
7
5
3
2
1000
7
5
3
2
tf
td(off)
tr
td(on)
10
7
5
--0.01
100
7
5
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
IT12942
5
°
C
25
°
C
--25
°
C
Ta
5
°
C
--2
=
°
C
Source Current, IS -- A
10
--1.0
7
5
3
2
Ciss
Coss
Crss
--6
--8
--10
--12
IT12943
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
No. A0661-3/7
EMH1303
--4.5
--4.0
--3.5
VGS -- Qg
VDS= --6V
ID= --7A
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
ASO
IDP=
--28A
ID= --7A
DC
op
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
10
era
tio
PW
≤
10μs
10
0
1m
μ
s
10
s
ms
0m
s
25
°
C
)
Operation in this area
is limited by RDS(on).
n(
Ta
=
1
2
3
4
5
6
7
8
9
10
11
12
13
--0.01
--0.01
Ta=25°C
Single pulse
Mounted on a ceramic board (1200mm
2
✕0.8mm)
2 3
5 7 --0.1
2 3
5 7 --1.0
2 3
Total Gate Charge, Qg -- nC
1.6
IT12944
PD -- Ta
M
Drain-to-Source Voltage, VDS
5 7 --10
2 3
-- V
IT13034
Allowable Power Dissipation, PD -- W
1.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
ou
nt
e
d
on
ac
er
am
ic
bo
ar
d
(1
20
0m
m
2
✕
0.
8m
m
)
Ambient Temperature, Ta --
°C
IT12946
No. A0661-4/7
EMH1303
Embossed Taping Specification
EMH1303-TL-E
No. A0661-5/7
嵌入式系统
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