RN2107FS~RN2109FS
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2107FS,RN2108FS,RN2109FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
0.15±0.05
Unit: mm
•
Incorporating a bias resistor into a transistor reduces parts count.
0.6±0.05
0.35±0.05
•
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
•
Complementary to RN1107FS to RN1109FS
1
3
2
0.8±0.05
1.0±0.05
0.1±0.05
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN2107FS
RN2108FS
R2
RN2109FS
E
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
0.48
-0.04
+0.02
0.1±0.05
fSM
1.BASE
2.EMITTER
3.COLLECOTR
B
R1
JEDEC
JEITA
TOSHIBA
―
―
2-1E1A
Weight: 0.6 mg (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN2107FS to RN2109FS
RN2107FS
Emitter-base voltage
RN2108FS
RN2109FS
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2107FS to RN2109FS
I
C
P
C
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
−20
−20
−6
−7
−15
−50
50
150
−55
to 150
mA
mW
°C
°C
V
Unit
V
V
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-08-20
0.2±0.05
RN2107FS~RN2109FS
Electrical Characteristics
(Ta = 25°C)
Characteristics
Collector cut-off current
RN2107FS to 2109FS
RN2107FS
Emitter cut-off current
RN2108FS
RN2109FS
RN2107FS
DC current gain
RN2108FS
RN2109FS
Collector-emitter
saturation voltage
RN2107FS to 2109FS
RN2107FS
Input voltage (ON)
RN2108FS
RN2109FS
RN2107FS
Input voltage (OFF)
RN2108FS
RN2109FS
Collector output
capacitance
RN2107FS to 2109FS
RN2107FS
Input resistor
RN2108FS
RN2109FS
RN2107FS
Resistor ratio
RN2108FS
RN2109FS
R1/R2
⎯
R1
⎯
C
ob
V
CB
= −10
V, I
E
=
0,
f
=
1 MHz
V
I (OFF)
V
CE
= −5
V,
I
C
= −0.1
mA,
V
I (ON)
V
CE (sat)
h
FE
I
EBO
Symbol
I
CBO
I
CEO
Test Condition
V
CB
= −20
V, I
E
=
0
V
CE
= −20
V, I
B
=
0
V
EB
= −6
V, I
C
=
0
V
EB
= −7
V, I
C
=
0
V
EB
= −15
V, I
C
=
0
V
CE
= −5
V,
I
C
= −10
mA
I
C
= −5
mA,
I
B
= −0.25
mA
V
CE
= −0.2
V,
I
C
= −5
mA
Min
⎯
⎯
−0.088
−0.085
−0.182
120
120
100
Typ.
⎯
⎯
⎯
⎯
⎯
⎯
Max
−100
−500
−0.131
−0.126
−0.271
⎯
mA
Unit
nA
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1.2
10
22
47
0.213
0.468
2.14
⎯
⎯
−0.15
−1.5
−2.2
−5.0
−1.0
−1.1
−2.6
⎯
⎯
−0.7
−0.8
−1.6
−0.5
−0.6
−1.3
V
V
V
⎯
8
17.6
37.6
0.17
0.374
1.71
⎯
12
26.4
56.4
0.255
0.562
2.56
pF
kΩ
⎯
2
2010-08-20
RN2107FS~RN2109FS
RN2107FS
-100
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
-10000
COLLECTOR CURRENT IC (μA)
RN2107FS
IC - VI(OFF)
-10
Ta=100°C
-1000
Ta=100°C
25
-25
25
-1
-25
EMITTER COMMON
VCE= -0.2V
-0.1
-0.1
-100
EMITTER COMMON
VCE= -5V
-10
-0.2
-1
-10
-100
-0.4
-0.6
-0.8
-1
-1.2
-1.4
INPUT VOLTAGE VI(ON) ( V)
INPUT VOLTAGE VI(OFF) ( V)
RN2108FS
-100
IC - VI(ON)
-10000
COLLECTOR CURRENT IC (μA)
RN2108FS
IC - VI(OFF)
COLLECTOR CURRENT IC (mA)
EMITTER COMMON
VCE= -5V
-10
Ta=100°C
25
-1
-1000
Ta=100°C
25
-25
-25
EMITTER COMMON
VCE= -0.2V
-100
-0.1
-0.1
-1
-10
-100
-10
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
INPUT VOLTAGE VI(ON) ( V)
INPUT VOLTAGE VI(OFF) ( V)
RN2109FS
-100
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
-10000
COLLECTOR CURRENT IC (μA)
RN2109FS
IC - VI(OFF)
EMITTER COMMON
VCE= -0.2V
-10
EMITTER COMMON
VCE= -5V
-1000
Ta=100°C
25
-25
Ta=100°C
-1
25
-25
-100
-0.1
-0.1
-1
-10
-100
-10
-0.6
-1
-1.4
-1.8
-2.2
-2.6
-3
INPUT VOLTAGE VI(ON) ( V)
INPUT VOLTAGE VI(OFF) ( V)
3
2010-08-20
RN2107FS~RN2109FS
RN2107FS
1000
hFE - IC
-1000
COLLECTOR-EMMITER SATURATION
VOLTAGE VCE(sat) (mV)
RN2107FS
VCE(sat) - IC
EMITTER COMMON
IC / IB=20
Ta=100°C
DC CURRENT GAIN hFE
25
100
-25
-100
Ta=100°C
EMITTER COMMON
VCE= -5V
10
-1
-10
COLLECTOR CURRENT IC (mA)
-100
25
-25
-10
-1
-10
COLLECTOR CURRENT IC (mA)
-100
RN2108FS
1000
hFE - IC
-1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
RN2108FS
VCE(sat) - IC
EMITTER COMMON
IC / IB=20
Ta=100°C
DC CURRENT GAIN hFE
25
100
-25
-100
Ta=100°C
25
-25
-10
EMITTER COMMON
VCE= -5V
10
-1
-10
COLLECTOR CURRENT IC (mA)
-100
-1
-10
COLLECTOR CURRENT IC (mA)
-100
RN2109FS
1000
hFE - IC
-1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
RN2109FS
VCE(sat) - IC
EMITTER COMMON
IC / IB=20
DC CURRENT GAIN hFE
Ta=100°C
100
-25
25
-100
Ta=100°C
25
-25
EMITTER COMMON
VCE= -5V
10
-1
-10
COLLECTOR CURRENT IC (mA)
-100
-10
-1
-10
COLLECTOR CURRENT IC (mA)
-100
4
2010-08-20
RN2107FS~RN2109FS
Type Name
Marking
Type name
RN2107FS
U6
Type name
RN2108FS
U7
Type name
RN2109FS
U8
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that
come into direct contact with devices should be made of anti-static materials.
5
2010-08-20
微控制器 MCU
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