电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

NSVBSP19AT1G

产品描述ON Semiconductor SS SOT223 HV XTR NPN 35
产品类别分立半导体    晶体管   
文件大小96KB,共4页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
下载文档 详细参数 全文预览

NSVBSP19AT1G在线购买

供应商 器件名称 价格 最低购买 库存  
NSVBSP19AT1G - - 点击查看 点击购买

NSVBSP19AT1G概述

ON Semiconductor SS SOT223 HV XTR NPN 35

NSVBSP19AT1G规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
包装说明,
针数4
制造商包装代码0.0318
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
JESD-609代码e3
湿度敏感等级1
端子面层Tin (Sn)
Base Number Matches1

文档预览

下载PDF文档
BSP19AT1G,
NSVBSP19AT1G
NPN Silicon Expitaxial
Transistor
This family of NPN Silicon Epitaxial transistors is designed for use
as a general purpose amplifier and in switching applications. The
device is housed in the SOT−223 package which is designed for
medium power surface mount applications.
Features
http://onsemi.com
High Voltage
The SOT-223 Package Can Be Soldered Using Wave or Reflow
SOT-223 Package Ensures Level Mounting, Resulting in Improved
SOT−223 PACKAGE
NPN SILICON HIGH VOLTAGE
TRANSISTOR SURFACE MOUNT
COLLECTOR 2,4
BASE
1
EMITTER 3
Thermal Conduction, and Allows Visual Inspection of Soldered Joints
The Formed Leads Absorb Thermal Stress During Soldering,
Eliminating the Possibility of Damage to the Die
PNP Complement is BSP16T1G
Moisture Sensitivity Level (MSL): 1
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
4
1
MARKING
DIAGRAM
4
Collector
2
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Collector-Emitter Voltage (Open Base)
Collector-Base Voltage (Open Emitter)
Emitter-Base Voltage (Open Collector)
Collector Current (DC)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
350
400
5.0
100
Unit
Vdc
Vdc
Vdc
mAdc
3
TO-261AA
CASE 318E
STYLE 1
1
Base
AYW
SP19A
G
G
2
Collector
3
Emitter
THERMAL CHARACTERISTICS
Characteristic
Total Power Dissipation @ T
A
= 25°C
(Note 1)
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
ESD
Human Body Model
ESD
Machine Model
Symbol
P
D
Max
0.8
6.4
R
qJA
T
stg
HBM
MM
156
−65
to +150
3B
C
Unit
W
mW/°C
°C/W
°C
V
V
A
= Assembly Location
Y
= Year
W
= Work Week
SP19A = Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BSP19AT1G
NSVBSP19AT1G
Package
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
Shipping
1000 / Tape & Reel
1000 / Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum
recommended footprint.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
October, 2013
Rev. 11
1
Publication Order Number:
BSP19AT1/D

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2853  185  711  89  1137  58  4  15  2  23 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved