HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
DESCRIPTION
The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting
diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
H11D1
H11D2
H11D3
H11D4
4N38
FEATURES
• High Voltage
- H11D1, H11D2, BV
CER
= 300 V
- H11D3, H11D4, BV
CER
= 200 V
• High isolation voltage
- 5300 VAC RMS - 1 minute
- 7500 VAC PEAK - 1 minute
• Underwriters Laboratory (UL) recognized File# E90700
ANODE 1
6 BASE
APPLICATIONS
•
•
•
•
•
Power supply regulators
Digital logic inputs
Microprocessor inputs
Appliance sensor systems
Industrial controls
CATHODE 2
5 COLLECTOR
N/C 3
4 EMITTER
ABSOLUTE MAXIMUM RATINGS
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
EMITTER
*Forward DC Current
*Reverse Input Voltage
*Forward Current - Peak (1µs pulse, 300pps)
*LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
Symbol
T
STG
T
OPR
T
SOL
P
D
I
F
V
R
I
F
(pk)
P
D
Value
-55 to +150
-55 to +100
260 for 10 sec
260
3.5
80
6.0
3.0
150
1.41
Units
°C
°C
°C
mW
mW/°C
mA
V
A
mW
mW/°C
8/9/00
200046A
HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
H11D1, H11D2, H11D3, H11D4, 4N38
ABSOLUTE MAXIMUM RATINGS
(Cont.)
Parameter
DETECTOR
*Power Dissipation @ T
A
= 25°C
Derate linearly above 25°C
H11D1 - H11D2
*Collector to Emitter Voltage
H11D3 - H11D4
4N38
H11D1 - H11D2
*Collector Base Voltage
H11D3 - H11D4
4N38
*Emitter to Collector Voltage
Collector Current (Continuous)
H11D1 - H11D2
H11D3 - H11D4
V
ECO
V
CBO
V
CER
P
D
Symbol
Value
300
4.0
300
200
80
300
200
80
7
100
mA
V
Units
mW
mW/°C
ELECTRICAL CHARACTERISTICS
Characteristic
EMITTER
*Forward Voltage
Forward Voltage Temp.
Coefficient
Reverse Breakdown Voltage
Junction Capacitance
*Reverse Leakage Current
DETECTOR
*Breakdown Voltage
Collector to Emitter
*Collector to Base
Emitter to Base
Emitter to Collector
*Leakage Current
Collector to Emitter
(R
BE
= 1 M")
(T
A
= 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Test Conditions
(I
F
= 10 mA)
Symbol
V
F
!V
F
!T
A
BV
R
C
J
I
R
BV
CER
BV
CEO
BV
CBO
BV
EBO
BV
ECO
Device
ALL
ALL
ALL
ALL
ALL
ALL
H11D1/2
H11D3/4
4N38
H11D1/2
H11D3/4
4N38
4N38
ALL
H11D1/2
I
CER
H11D3/4
I
CEO
4N38
6
Min
Typ**
1.15
-1.8
25
50
65
0.05
Max
1.5
Unit
V
mV/°C
V
pF
pF
µA
(I
R
= 10 µA)
(V
F
= 0 V, f = 1 MHz)
(V
F
= 1 V, f = 1 MHz)
(V
R
= 6 V)
(R
BE
= 1 M")
(I
C
= 1.0 mA, I
F
= 0)
(No R
BE
) (I
C
= 1.0 mA)
(I
C
= 100 µA, I
F
= 0)
10
(I
E
= 100 µA , I
F
= 0)
(V
CE
= 200 V, I
F
= 0, T
A
= 25°C)
(V
CE
= 200 V, I
F
= 0, T
A
= 100°C)
(V
CE
= 100 V, I
F
= 0, T
A
= 25°C)
(V
CE
= 100 V, I
F
= 0, T
A
= 100°C)
(No R
BE
) (V
CE
= 60 V, I
F
= 0, T
A
= 25°C)
300
200
80
300
200
80
7
7
V
10
100
250
100
250
50
nA
µA
nA
µA
nA
Notes
* Parameters meet or exceed JEDEC registered data (for 4N38 only)
** All typical values at T
A
= 25°C
8/9/00
200046A
HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
H11D1, H11D2, H11D3, H11D4, 4N38
TRANSFER CHARACTERISTICS
DC Characteristic
EMITTER
Current Transfer Ratio
Collector to Emitter
(I
F
= 10 mA, V
CE
= 10 V)
(R
BE
= 1 M")
(I
F
= 10 mA, V
CE
= 10 V)
(I
F
= 10 mA, I
C
= 0.5 mA)
*Saturation Voltage
(R
BE
= 1 M")
(I
F
= 20 mA, I
C
= 4 mA)
V
CE (SAT)
CTR
Test Conditions
Symbol
Device
H11D1
H11D2
H11D3
H11D4
4N38
H11D1/2/3/4
4N38
1 (10)
2 (20)
0.1
0.40
1.0
V
2 (20)
mA (%)
Min
Typ**
Max
Unit
TRANSFER CHARACTERISTICS
Characteristic
SWITCHING TIMES
Non-Saturated Turn-on Time
Turn-off Time
Test Conditions
(V
CE
=10 V, I
CE
= 2 mA)
(R
L
= 100
")
Symbol
t
on
t
off
Device
ALL
ALL
Min
Typ**
5
5
Max
Unit
µs
ISOLATION CHARACTERISTICS
Characteristic
Isolation Voltage
Isolation Resistance
Isolation Capacitance
Test Conditions
(I
I-O
#$1
µA, 1 min.)
(V
I-O
= 500 VDC)
(f = 1 MHz)
Symbol
V
ISO
R
ISO
C
ISO
Device
ALL
ALL
ALL
Min
5300
7500
10
11
0.5
Typ**
Max
Unit
(V
AC
RMS)
(V
AC
PEAK)
"
pF
Notes
* Parameters meet or exceed JEDEC registered data (for 4N38 only)
** All typical values at T
A
= 25°C
Fig.1 LED Forward Voltage vs. Forward Current
1.8
1.7
Fig.2 Normalized Output Characteristics
NORMALIZED I
CER
- OUTPUT CURRENT
Normalized to:
V
CE
= 10 V
I
F
= 10 mA
R
BE
= 10
6
Ω
T
A
= 25˚C
I
F
= 50 mA
1
I
F
= 10 mA
V
F
- FORWARD VOLTAGE (V)
10
1.6
1.5
1.4
1.3
T
A
= 25˚C
1.2
1.1
1.0
1
T
A
= 100˚C
10
100
T
A
= 55˚C
I
F
= 5 mA
0.1
0.01
0.1
1
10
100
I
F
- LED FORWARDCURRENT (mA)
V
CE
- COLLECTOR VOLTAGE (V)
8/9/00
200046A
HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
H11D1, H11D2, H11D3, H11D4, 4N38
Fig.3 Normalized Output Current vs. LED Input Current
10
Fig.4 Normalized Output Current vs. Temperature
NORMALIZED I
CER
- OUTPUT CURRENT
Normalized to:
V
CE
= 10 V
I
F
= 10 mA
R
BE
= 10
6
Ω
T
A
= 25˚C
NORMALIZED I
CER
- OUTPUT CURRENT
Normalized to:
V
CE
= 10 V
I
F
= 10 mA
R
BE
= 10
6
Ω
T
A
= 25˚C
1
I
F
= 20 mA
I
F
= 10 mA
1
I
F
= 5 mA
0.1
0.01
1
10
0.1
-60
-40
-20
0
20
40
60
80
100
I
F
- LED INPUT CURRENT (mA)
T
A
- AMBIENT TEMPERATURE (˚C)
Fig.5 Normalized Dark Current vs. Ambient Temperature
NORMALIZED I
CBO
- COLLECTOR-BASE CURRENT
10
9
8
7
6
5
4
3
2
1
Normalized to:
V
CE
= 100 V
R
BE
= 10
6
Ω
T
A
= 25˚C
Normalized Collector-Base Current vs. Temperature
Normalized to:
V
CE
= 10 V
I
F
= 10 mA
R
BE
= 10
6
Ω
T
A
= 25˚C
NORMALIZED I
CER
- DARK CURRENT
10000
I
F
= 50 mA
1000
V
CE
= 300 V
100
V
CE
= 100 V
V
CE
= 50 V
10
1
I
F
= 10 mA
0.1
10
20
30
40
50
60
70
80
90
100
110
0
-60
I
F
= 5 mA
-40
-20
0
20
40
60
80
100
T
A
- AMBIENT TEMPERATURE (˚C)
T
A
- AMBIENT TEMPERATURE (˚C)
8/9/00
200046A
HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
H11D1, H11D2, H11D3, H11D4, 4N38
Package Dimensions (Through Hole)
3
2
1
PIN 1
ID.
Package Dimensions (Surface Mount)
0.350 (8.89)
0.330 (8.38)
3
0.270 (6.86)
0.240 (6.10)
2
1
PIN 1
ID.
0.270 (6.86)
0.240 (6.10)
4
SEATING PLANE
5
0.350 (8.89)
0.330 (8.38)
6
4
5
6
0.070 (1.78)
0.045 (1.14)
0.070 (1.78)
0.045 (1.14)
0.300 (7.62)
TYP
0.200 (5.08)
0.135 (3.43)
0.200 (5.08)
0.165 (4.18)
0.154 (3.90)
0.100 (2.54)
0.020 (0.51)
MIN
0.016 (0.40)
0.008 (0.20)
0.022 (0.56)
0.016 (0.41)
0.100 (2.54)
TYP
0° to 15°
0.300 (7.62)
TYP
0.016 (0.41)
0.008 (0.20)
0.020 (0.51)
MIN
0.100 (2.54)
TYP
0.022 (0.56)
0.016 (0.41)
0.016 (0.40) MIN
0.315 (8.00)
MIN
0.405 (10.30)
MAX
Lead Coplanarity : 0.004 (0.10) MAX
Package Dimensions (0.4”Lead Spacing)
3
2
1
PIN 1
ID.
Recommended Pad Layout for
Surface Mount Leadform
0.270 (6.86)
0.240 (6.10)
0.070 (1.78)
4
5
6
0.060 (1.52)
0.350 (8.89)
0.330 (8.38)
0.070 (1.78)
0.045 (1.14)
0.415 (10.54)
0.100 (2.54)
0.030 (0.76)
SEATING PLANE
0.295 (7.49)
0.004 (0.10)
MIN
0.200 (5.08)
0.135 (3.43)
0.154 (3.90)
0.100 (2.54)
0.016 (0.40)
0.008 (0.20)
0.022 (0.56)
0.016 (0.41)
0.100 (2.54) TYP
0° to 15°
0.400 (10.16)
TYP
NOTE
All dimensions are in inches (millimeters)
8/9/00
200046A
微控制器 MCU
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