4-PIN PHOTODARLINGTON
OPTOCOUPLER
H11B815
PACKAGE
SCHEMATIC
ANODE 1
4 COLLECTOR
4
4
CATHODE 2
3 EMITTER
1
1
4
1
DESCRIPTION
The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual
in-line package.
FEATURES
•
•
•
•
Compact 4-pin package
Current Transfer Ratio: 600% minimum (at I
F
= 1 mA)
High isolation voltage between input and output (5300 VRMS)
UL recognized (File # E90700)
APPLICATIONS
•
•
•
•
•
Power Supply Monitors
Relay Contact Monitor
Telephone/Telegraph Line Receiver
Twisted Pair Line Receiver
Digital Logic/Digital Logic
© 2002 Fairchild Semiconductor Corporation
Page 1 of 9
3/26/03
4-PIN PHOTODARLINGTON
OPTOCOUPLER
H11B815
ABSOLUTE MAXIMUM RATINGS
(No derating required up to 85°C)
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ T
A
= 25°C
EMITTER
DC/Average Forward Input Current
Reverse Input Voltage
Forward Current - Peak (1µs pulse, 300pps)
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
Emitter-Collector Voltage
Continuous Collector Current
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
V
CEO
V
ECO
I
C
P
D
35
6
200
200
2.0
V
V
mA
mW
mW/°C
I
F
V
R
I
F
(pk)
P
D
80
6
1
140
1.33
mA
V
A
mW
mW/°C
T
STG
T
OPR
T
SOL
P
D
-55 to +150
-55 to +100
260 for 10 sec
250
°C
°C
°C
mW
Symbol
Value
Units
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
EMITTER
Input Forward Voltage
Reverse Leakage Current
DETECTOR
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Capacitance
(I
C
= 1.0 mA, I
F
= 0)
(I
E
= 100 µA, I
F
= 0)
(V
CE
= 10 V, I
F
= 0)
(V
CE
= 0 V, f = 1 MHz)
BV
CEO
BV
ECO
I
CEO
C
CE
35
6
60
8
0.005
8
1
V
V
µA
pF
(I
F
= 20 mA)
(V
R
= 6.0 V)
V
F
I
R
1.2
0.001
1.50
10
V
µA
Test Conditions
Symbol
Min
Typ**
Max
Unit
© 2002 Fairchild Semiconductor Corporation
Page 2 of 9
3/26/03
4-PIN PHOTODARLINGTON
OPTOCOUPLER
H11B815
TRANSFER CHARACTERISTICS
DC Characteristic
Current Transfer Ratio, Collector-Emitter
Saturation Voltage
Rise Time (non saturated)
Fall Time (non saturated)
Test Conditions
(I
F
= 1 mA, V
CE
= 2 V)
(I
F
= 20 mA, I
C
= 5 mA)
(I
C
= 10 mA, V
CE
= 2 V, R
L
= 100V)
(I
C
= 10 mA, V
CE
= 2 V, R
L
= 100V)
Symbol
CTR
V
CE(sat)
t
r
t
f
Min
600
0.8
Typ**
Max
7,500
1.0
300
250
Units
%
V
µs
µs
ISOLATION CHARACTERISTICS
Characteristic
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
** All typicals at TA = 25°C
Test Conditions
(I
I-O
[ 1 µA, 1 min.)
(V
I-O
= 500 VDC)
(V
I-O
= &, f = 1 MHz)
Symbol
V
ISO
R
ISO
C
ISO
Min
5300
10
11
0.5
Typ**
Max
Units
Vac(rms)
Ω
pf
© 2002 Fairchild Semiconductor Corporation
Page 3 of 9
3/26/03
4-PIN PHOTODARLINGTON
OPTOCOUPLER
H11B815
Typical Performance Curves
Fig. 1 Normalized Current Transfer Ratio
vs. Forward Current
NORMALIZED CURRENT TRANSFER RATIO - CTR
V
CE
= 2 V
NORMALIZED TO I
F
= 1 mA
1.2
Fig. 2 Normalized Current Transfer Ratio
vs. Ambient Temperature
1.2
NORMALIZED CURRENT TRANSFER RATIO - CTR
1.4
1.0
1.0
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0.2
I
F
= 1 mA, V
CE
= 2 V
NORMALIZED TO T
A
= 25˚C
0.0
0.0
0.1
1
10
-55
-25
0
25
50
75
100
I
F
- FORWARD CURRENT (mA)
T
A
- AMBIENT TEMPERATURE (˚C)
Fig. 3 Normalized Collector Current
vs. Collector Emitter Voltage
4.0
10 mA
100000
Fig. 4 Collector-Emitter Dark Current
vs. Ambient Temperature
I
CEO
- COLLECTOR-EMITTER DARK CURRENT (nA)
I
C
- NORMALIZED COLLECTOR CURRENT
3.5
10000
V
CE
= 10 V
3.0
5 mA
2.5
1000
2.0
2 mA
1.5
1 mA
100
10
1.0
1
0.5
I
F
= 0.5 mA
NORMALIZED TO I
F
=1 mA, V
CE
= 2 V
0.0
0
1
2
3
4
5
0.1
0
20
40
60
80
100
V
CE
- COLLECTOR-EMITTER VOLTAGE (V)
T
A
- AMBIENT TEMPERATURE (˚C)
Fig. 5 LED Forward Voltage vs. Forward Current
1.8
1.7
V
F
- FORWARD VOLTAGE (V)
1.6
1.5
1.4
T
A
= 55˚C
1.3
T
A
= 25˚C
1.2
T
A
= 100˚C
1.1
1.0
1
10
100
I
F
- LED FORWARD CURRENT (mA)
© 2002 Fairchild Semiconductor Corporation
Page 4 of 9
3/26/03
4-PIN PHOTODARLINGTON
OPTOCOUPLER
H11B815
Recommended Thermal Reflow Profile for Surface Mount DIP Package
Temperature (°C)
250
220°C: 10 sec to 40 sec
200
150
225°C
Time > 183°C: 120 sec to 180 sec
100
50
0
0
1
2
3
4
5
Time (Min)
© 2002 Fairchild Semiconductor Corporation
Page 5 of 9
3/26/03
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