PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
SCHEMATIC
PACKAGE OUTLINE
1
6
2
5
6
6
1
H11AV1S-M, H11AV2S-M
1
H11AV1-M, H11AV2-M
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
3
NC
4
6
1
H11AV1A-M, H11AV2A-M
DESCRIPTION
The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin
dual in-line white package.
FEATURES
• H11AV1 and H11AV2 feature 0.3" input-output lead spacing
• H11AV1A and H11AV2A feature 0.4" input-output lead spacing
• UL recognized (File #E90700, Vol. 2)
• VDE recognized (File #102497)
- Add option V (e.g., H11AV1AV-M)
APPLICATIONS
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
© 2003 Fairchild Semiconductor Corporation
Page 1 of 10
6/30/03
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Wave solder temperature (see page 9 for reflow solder profiles)
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
EMITTER
DC/Average Forward Input Current
Reverse Input Voltage
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
V
CEO
V
CBO
V
ECO
P
D
70
70
7
150
1.76
V
V
V
mW
mW/°C
I
F
V
R
P
D
60
6
120
1.41
mA
V
mW
mW/°C
T
STG
T
OPR
T
SOL
P
D
-40 to +150
-40 to +100
260 for 10 sec
250
2.94
°C
°C
°C
mW
mW/°C
Symbol
Value
Units
© 2003 Fairchild Semiconductor Corporation
Page 2 of 10
6/30/03
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
EMITTER
Input Forward Voltage (I
F
= 10 mA)
T
A
= 25°C
T
A
= -55°C
T
A
= 100°C
Reverse Leakage Current
DETECTOR
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Collector-Base Dark Current
Capacitance
(I
C
= 1.0 mA, I
F
= 0)
(I
C
= 100 µA, I
F
= 0)
(I
E
= 100 µA, I
F
= 0)
(V
CE
= 10 V, I
F
= 0)
(V
CB
= 10 V)
(V
CE
= 0 V, f = 1 MHz)
BV
CEO
BV
CBO
BV
ECO
I
CEO
I
CBO
C
CE
70
70
7
100
120
10
1
0.5
8
50
V
V
V
nA
nA
pF
(V
R
= 6.0 V)
I
R
V
F
0.8
0.9
0.7
1.18
1.28
1.05
1.5
1.7
1.4
10
µA
V
Test Conditions
Symbol
Min
Typ*
Max
Unit
ISOLATION CHARACTERISTICS
Characteristic
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
Note
* Typical values at T
A
= 25°C
Test Conditions Symbol
(f = 60 Hz, t = 1 sec)
(V
I-O
= 500 VDC)
(V
I-O
= 0 V, f = 1 MHz)
V
ISO
R
ISO
C
ISO
Min
7500
10
11
0.2
2
Typ*
Max
Units
Vac(pk)
Ω
pF
© 2003 Fairchild Semiconductor Corporation
Page 3 of 10
6/30/03
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
TRANSFER CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
DC Characteristic
Current Transfer Ratio,
Collector to Emitter
Collector-Emitter
Saturation Voltage
AC Characteristic
Non-Saturated
Turn-on Time
Non Saturated
Turn-off Time
(I
C
= 2 mA, V
CC
= 10 V, R
L
= 100
Ω
)
(Fig. 11)
(I
C
= 2 mA, V
CC
= 10 V, R
L
= 100
Ω
)
(Fig. 11)
T
ON
T
ON
All
15
µs
Test Conditions
Symbol
Device
H11AV1
H11AV1A
H11AV2
H11AV2A
All
Min
100
50
0.4
V
Typ*
Max
300
Unit
%
(I
F
= 10 mA, V
CE
= 10 V)
CTR
(I
C
= 2 mA, I
F
= 20 mA)
V
CE (SAT)
All
15
µs
* Typical values at T
A
= 25°C
© 2003 Fairchild Semiconductor Corporation
Page 4 of 10
6/30/03
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
TYPICAL PERFORMANCE CURVES
Fig. 1 LED Forward Voltage vs. Forward Current
1.8
1.6
V
CE
= 5.0V
T
A
= 25°C
Normalized to
I
F
= 10 mA
Fig. 2 Normalized CTR vs. Forward Current
1.7
1.4
V
F
- FORWARD VOLTAGE (V)
1.6
1.2
NORMALIZED CTR
1.5
1.0
1.4
T
A
= -55°C
1.3
T
A
= 25°C
1.2
T
A
= 100°C
0.8
0.6
0.4
1.1
0.2
1.0
1
10
100
0.0
0
2
4
6
8
10
12
14
16
18
20
I
F
- LED FORWARD CURRENT (mA)
I
F
- FORWARD CURRENT (mA)
Fig. 3 Normalized CTR vs. Ambient Temperature
1.4
1.0
Fig. 4 CTR vs. RBE (Unsaturated)
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
0.9
0.8
I
F
= 20 mA
I
F
= 10 mA
1.2
I
F
= 5 mA
0.7
I
F
= 5 mA
0.6
0.5
0.4
0.3
0.2
V
CE
= 5.0 V
0.1
0.0
NORMALIZED CTR
1.0
I
F
= 10 mA
0.8
0.6
I
F
= 20 mA
0.4
Normalized to
I
F
= 10 mA
T
A
= 25°C
0.2
-60
-40
-20
0
20
40
60
80
100
10
100
1000
R
BE
- BASE RESISTANCE (kΩ)
T
A
- AMBIENT TEMPERATURE (°C)
1.0
V
CE (SAT)
- COLLECTOR-EMITTER SATURATION VOLTAGE (V)
Fig. 5 CTR vs. RBE (Saturated)
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current
100
0.9
V
CE
= 0.3 V
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
100
1000
I
F
= 5 mA
I
F
= 10 mA
I
F
= 20 mA
T
A
= 25˚C
10
1
I
F
= 2.5 mA
0.1
0.01
I
F
= 5 mA
I
F
= 10 mA
I
F
= 20 mA
R
BE
- BASE RESISTANCE (k
Ω)
0.001
0.01
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
© 2003 Fairchild Semiconductor Corporation
Page 5 of 10
6/30/03
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