4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
PACKAGE
H11A617 SERIES
H11A817 SERIES
H11AA814 SCHEMATIC
1
4 COLLECTOR
4
2
3 EMITTER
1
DESCRIPTION
The H11AA814 Series consists of two gallium arsenide infrared emitting diodes,
connected in inverse parallel, driving a single silicon phototransistor in a 4-pin
dual in-line package.
The H11A617 and H11A817 Series consists of a gallium arsenide infrared
emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
H11A617 & H11A817 SCHEMATIC
ANODE 1
4 COLLECTOR
FEATURES
• Compact 4-pin package
• Current transfer ratio in selected groups:
H11AA814: 20-300%
H11A817:
H11AA814A: 50-150%
H11A817A:
H11A617A: 40%-80%
H11A817B:
H11A617B: 63%-125%
H11A817C:
H11A617C: 100%-200%
H11A817D:
H11A617D: 160%-320%
• Minimum BV
CEO
of 70V guaranteed
50-600%
80-160%
130-260%
200-400%
300-600%
CATHODE 2
3 EMITTER
APPLICATIONS
H11AA814 Series
• AC line monitor
• Unknown polarity DC sensor
• Telephone line interface
H11A617 and H11A817 Series
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
© 2003 Fairchild Semiconductor Corporation
Page 1 of 9
4/24/03
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation (-55°C to 50 °C)
EMITTER
Continuous Forward Current
Reverse Voltage
Forward Current - Peak (1 µs pulse, 300 pps)
LED Power Dissipation (25°C ambient)
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
Emitter-Collector Voltage
Continuous Collector Current
Detector Power Dissipation (25°C ambient)
Derate above 25°C
V
CEO
V
ECO
I
C
P
D
All
H11AA814/A
H11A617A/B/C/D
H11A817/A/B/C/D
All
All
70
6
7
6
50
150
2.0
V
V
mA
mW
mW/°C
I
F
V
R
I
F
(pk)
P
D
All
H11A617A/B/C/D
H11A817/A/B/C/D
All
All
50
6
5
1.0
100
1.33
mA
V
A
mW
mW/°C
T
STG
T
OPR
T
SOL
P
D
All
All
All
All
-55 to +150
-55 to +100
260 for 10 sec
200
°C
°C
°C
mW
H11A617 SERIES
Symbol
Device
H11A817 SERIES
Value
Units
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
EMITTER
Input Forward Voltage
Reverse Leakage Current
DETECTOR
Collector-Emitter Breakdown
Voltage
Emitter-Collector Breakdown
Voltage
Test Conditions Symbol
(I
F
= 60 mA)
(I
F
= 20 mA)
(I
F
= ±20 mA)
(V
R
= 6.0 V)
(V
R
= 5.0 V)
(I
C
= 1.0 mA, I
F
= 0)
(I
E
= 100 µA, I
F
= 0)
I
R
V
F
Device
H11A617A/B/C/D
H11A817/A/B/C/D
H11AA814/A
H11A617A/B/C/D
H11A817/A/B/C/D
Min
Typ*
1.35
1.2
1.2
.001
Max
1.65
1.5
1.5
10
µA
V
Unit
BV
CEO
BV
ECO
ALL
H11AA814/A
H11A617A/B/C/D
H11A817/A/B/C/D
H11AA814/A, H11A817/A/B/C/D,
H11A617C/D
H11A617A/B
ALL
70
6
7
6
100
V
10
V
Collector-Emitter Dark Current
Collector-Emitter Capacitance
*Typical values at T
A
= 25°C.
(V
CE
= 10V, I
F
= 0)
(V
CE
= 0 V, f = 1 MHz)
I
CEO
C
CE
1
8
100
50
nA
pF
© 2003 Fairchild Semiconductor Corporation
Page 2 of 9
4/24/03
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
H11A817 SERIES
TRANSFER CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
DC Characteristic
Test Conditions
(I
F
= ±1 mA, V
CE
= 5 V) (note 1)
(I
F
= ±1 mA, V
CE
= 5 V) (note 1)
Symbol
Device
H11AA814
H11AA814A
H11A617A
(I
F
= 10 mA, V
CE
= 5 V) (note 1)
H11A617B
H11A617C
H11A617D
Current Transfer
Ratio
(I
F
= 5 mA, V
CE
= 5 V) (note 1)
H11A817
CTR
H11A817A
H11A817B
H11A817C
H11A817D
H11A617A
(I
F
= 1 mA, V
CE
= 5 V) (note 1)
H11A617B
H11A617C
H11A617D
Collector-Emitter
Saturation Voltage
AC Characteristic
Rise Time
Fall Time
(I
C
= 2 mA, V
CE
= 2 V, R
L
= 100V) (note 2)
(I
C
= 2 mA, V
CE
= 2 V, R
L
= 100V) (note 2)
t
r
t
f
ALL
ALL
2.4
2.4
18
18
µs
µs
(I
C
= 1 mA, I
F
= ±20 mA)
(I
C
= 2.5 mA, I
F
= 10 mA)
(I
C
= 1 mA, I
F
= 20 mA)
H11AA814/A
V
CE (SAT)
H11A617A/B/C/D
H11A817/A/B/C/D
Min
20
50
40
63
100
160
50
80
130
200
300
13
22
34
56
0.2
0.4
0.2
V
Typ*
Max
300
150
80
125
200
320
600
160
260
400
600
Unit
%
%
%
%
%
%
%
%
%
%
%
%
%
%
%
ISOLATION CHARACTERISTICS
Characteristic
Input-Output Isolation Voltage (note 3)
Isolation Resistance
Isolation Capacitance
*Typical values at T
A
= 25°C.
NOTES
1. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
2. For test circuit setup and waveforms, refer to Figure 8.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
Test Conditions
f = 60Hz, t = 1 min
(V
I-O
= 500 VDC)
(V
I-O
= 0, f = 1 MHz)
Symbol
V
ISO
R
ISO
C
ISO
Min
5300
10
11
0.5
Typ*
Max
Units
Vac(rms)
Ω
pf
© 2003 Fairchild Semiconductor Corporation
Page 3 of 9
4/24/03
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
CTR NORMALIZED @ I
F
= 5 mA, V
CE
= 5 V, T
A
= 25˚C
H11A617 SERIES
NORMALIZED CTR
CTR NORMALIZED @ I
F
= 5 mA, V
CE
= 5 V, T
A
= 25˚C
H11A817 SERIES
Fig. 2 Normalized CTR vs. Ambient Temperature
Fig. 1 Normalized CTR vs. Forward Current
1.4
1.2
I
F
= 10 mA
1.2
1
1
NORMALIZED CTR
0.8
I
F
= 5 mA
0.8
0.6
0.4
0.6
0.2
0
0
5
10
15
20
25
30
I
F
- FORWARD CURRENT (mA)
0.4
-50
-25
0
+25
+50
+75
+100
T
A
- AMBIENT TEMPERATURE (˚C)
Fig. 3 Collector-Emitter Saturation Voltage
vs. Ambient Temperature
.14
I
F
= 20 mA
I
C
= 1 mA
Fig. 4 Forward Voltage vs. Forward Current
1.7
V
CE (SAT)
- COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
.12
V
F
- FORWARD VOLTAGE (V)
1.5
.1
1.3
T = -55˚C
.08
1.1
T = 25˚C
.06
.04
0.9
T = 100˚C
.02
0.7
0
-50
0.5
-25
0
25
50
75
100
125
0.1
0.2
0.5
1.0
2.0
5
10
20
50
100
T
A
- AMBIENT TEMPERATURE (˚C)
I
F
- FORWARD CURRENT (mA)
Fig. 5 Collector Current
vs. Collector-Emitter Voltage
25
I
C -
COLLECTOR CURRENT (mA)
I
F
= 20 mA
20
15
I
F
= 10 mA
10
I
F
= 5 mA
5
I
F
= 1 mA
0
0
1
2
3
4
5
6
7
8
9
10
V
CE
- COLLECTOR-EMITTER VOLTAGE (V)
© 2003 Fairchild Semiconductor Corporation
Page 4 of 9
4/24/03
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
Fig. 6 Collector Leakage Current
vs. Ambient Temperature
H11A617 SERIES
H11A817 SERIES
Fig. 7 Rise and Fall Time
vs. Load Resistor
I
CEO -
COLLECTOR-EMITTER CURRENT (µA)
10
V
CE
= 10 V
1000
I
F
= 5 mA
V
CC
= 5 V
T
A
= 25˚C
T
r/
T
f-
RISE AND FALL TIME (µs)
1
t
off
t
f
10
-1
100
10
-2
10
10
-3
10
-4
1
t
r
t
on
10
-5
10
-6
0
25
50
75
100
125
0.1
0.1
1
10
100
R - LOAD RESISTOR (KV)
T
A
- AMBIENT TEMPERATURE (˚C)
Figure 8. Switching Time Test Circuit and Waveforms
TEST CIRCUIT
V
CC
= 10V
WAVE FORMS
INPUT PULSE
I
F
INPUT
I
C
R
L
= 100Ω
10%
90%
OUTPUT PULSE
OUTPUT
t
r
Adjust I
F
to produce I
C
= 2 mA
t
f
Recommended Thermal Reflow Profile for Surface Mount DIP Package
Temperature (°C)
250
220°C: 10 sec to 40 sec
200
150
Time > 183°C: 120 sec to 180 sec
100
50
0
0
1
2
3
4
5
Time (Min)
225°C
© 2003 Fairchild Semiconductor Corporation
Page 5 of 9
4/24/03
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