MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by H11AA1/D
GlobalOptoisolator™
6-Pin DIP Optoisolators
AC Input/Transistor Output
The H11AA1, H11AA2, H11AA3, H11AA4 devices consist of two gallium–
arsenide infrared emitting diodes connected in inverse parallel, optically
coupled to a monolithic silicon phototransistor detector.
•
Built–In Protection for Reverse Polarity
•
Guaranteed CTR Minimum Values as High as 100%
•
Guaranteed Minimum/Maximum Symmetry Limits
•
To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option.
Applications
•
Detecting or Monitoring ac Signals
•
AC Line/Digital Logic Isolation
•
Programmable Controllers
•
Interfacing and coupling systems of different potentials and impedances
•
AC/DC — Input Modules
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
Rating
INPUT LED
Forward Current — Continuous (RMS)
LED Power Dissipation @ TA = 25°C
with Negligible Power in Output Detector
Derate above 25°C
OUTPUT TRANSISTOR
Collector–Emitter Voltage
Emitter–Base Voltage
Collector–Base Voltage
Collector Current — Continuous
Detector Power Dissipation @ TA = 25°C
with Negligible Power in Input LEDs
Derate above 25°C
TOTAL DEVICE
Isolation Surge Voltage(1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
Ambient Operating Temperature Range(2)
Storage Temperature Range(2)
Soldering Temperature (10 sec, 1/16″ from case)
VISO
PD
TA
Tstg
TL
7500
250
2.94
– 55 to +100
– 55 to +150
260
Vac(pk)
mW
mW/°C
°C
°C
°C
VCEO
VEBO
VCBO
IC
PD
30
5
70
150
150
1.76
Volts
Volts
Volts
mA
mW
mW/°C
IF
PD
60
120
1.41
mA
mW
mW/°C
1
2
3
Symbol
Value
Unit
H11AA1*
H11AA2
H11AA3
H11AA4*
[CTR = 20% Min]
[CTR = 10% Min]
[CTR = 50% Min]
[CTR = 100% Min]
*Motorola Preferred Devices
STYLE 8 PLASTIC
6
1
STANDARD THRU HOLE
CASE 730A–04
SCHEMATIC
6
5
4
NC
INPUT LED
INPUT LED
NO CONNECTION
EMITTER
COLLECTOR
BASE
PIN 1.
2.
3.
4.
5.
6.
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
Preferred
devices are Motorola recommended choices for future use and best overall value.
GlobalOptoisolator is a trademark of Motorola, Inc.
REV 1
©
Motorola
Inc. 1995
Motorola,
Optoelectronics Device Data
1
H11AA1 H11AA2 H11AA3 H11AA4
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)(1)
Characteristic
INPUT LED
Forward Voltage
(IF = 10 mA, either direction)
TA = –55°C
TA = 100°C
Capacitance (V = 0 V, f = 1 MHz)
OUTPUT TRANSISTOR
Collector–Emitter Dark Current
(VCE = 10 V)
TA = 100°C
Collector–Base Dark Current (VCB = 10 V)
Collector–Emitter Breakdown Voltage (IC = 10 mA)
Collector–Base Breakdown Voltage (IC = 100
µA)
Emitter–Collector Breakdown Voltage (IE = 100
µA)
DC Current Gain (IC = 2 mA, VCE = 5 V) (Typical Value)
Collector–Emitter Capacitance (f = 1 MHz, VCE = 0 V)
Collector–Base Capacitance (f = 1 MHz, VCB = 0 V)
Emitter–Base Capacitance (f = 1 MHz, VEB = 0 V)
COUPLED
Output Collector Current
(IF = 10 mA, VCE = 10 V)
H11AA1,3,4
H11AA2
All devices
ICEO
—
—
—
—
30
70
5
—
—
—
—
1
1
1
0.2
45
100
7.8
500
1.7
20
10
100
200
—
—
—
—
—
—
—
—
—
nA
nA
µA
nA
Volts
Volts
Volts
—
pF
pF
pF
H11AA1,3,4
H11AA2
All devices
All devices
VF
—
—
—
—
—
1.15
1.15
1.3
1.05
20
1.5
1.8
—
—
—
Volts
Symbol
Min
Typ
(1)
Max
Unit
CJ
pF
ICBO
V(BR)CEO
V(BR)CBO
V(BR)ECO
hFE
CCE
CCB
CEB
IC (CTR)(2)
"
H11AA1
H11AA2
H11AA3
H11AA4
H11AA1,3,4
2 (20)
1 (10)
5 (50)
10 (100)
0.33
5 (50)
2 (20)
10 (100)
15 (150)
—
—
—
—
—
3
mA (%)
Output Collector Current Symmetry(3)
I
at I
F
C
I at I
F
C
+ )
10 mA, VCE
+
10 V
+
–10 mA, VCE
+
10 V
—
—
Collector–Emitter Saturation Voltage (IC = 0.5 mA, IF =
Isolation Voltage (f = 60 Hz, t = 1 sec)(4)
Isolation Resistance (V = 500 V)(4)
Isolation Capacitance (V = 0 V, f = 1 MHz)(4)
1.
2.
3.
4.
"
10 mA)
VCE(sat)
VISO
RISO
CISO
—
7500
1011
—
0.1
—
—
0.2
0.4
—
—
—
Volts
Vac(pk)
Ω
pF
Always design to the specified minimum/maximum electrical limits (where applicable).
Current Transfer Ratio (CTR) = IC/IF x 100%.
This specification guarantees that the higher of the two IC readings will be no more than 3 times the lower at IF = 10 mA.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2
Motorola Optoelectronics Device Data
H11AA1 H11AA2 H11AA3 H11AA4
TYPICAL CHARACTERISTICS
2.4
Vin, INPUT VOLTAGE (VOLTS)
1.6
0.8
0
–0.8
–1.6
–2.4
–1000
PULSE ONLY
PULSE OR DC
INPUT CURRENT
WAVEFORM
MAXIMUM
PEAK OUTPUT
CURRENT (1)
MINIMUM
PEAK OUTPUT
CURRENT (1)
–600
–200
0
200
600
iF, INSTANANEOUS INPUT CURRENT (mA)
1000
Figure 1. Input Voltage versus Input Current
I C , OUTPUT COLLECTOR CURRENT (NORMALIZED)
10
7
5
2
1
0.7
0.5
0.2
0.1
Figure 2. Output Characteristics
28
IC , COLLECTOR CURRENT (mA)
24
20
16
5 mA
12
8
4
0
0
1
2
3
4
5
6
7
8
9
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
2 mA
1 mA
IF = 10 mA
NORMALIZED TO TA = 25°C
–60
–40
–20
0
20
40
60
80
TA, AMBIENT TEMPERATURE (°C)
100
Figure 3. Collector Current versus
Collector–Emitter Voltage
ICEO, COLLECTOR–EMITTER DARK CURRENT
(NORMALIZED)
Figure 4. Output Current versus Ambient Temperature
C, CAPACITANCE (pF)
100
NORMALIZED TO:
VCE = 10 V
TA = 25°C
22
20
18
16
14
12
10
8
6
4
2
CCE
0
0.01
CEB
CCB
f = 1 MHz
10
VCE = 30 V
1
10 V
0
20
40
60
80
TA, AMBIENT TEMPERATURE (°C)
100
CLED
0.1
0.1
1
V, VOLTAGE (VOLTS)
10
100
Figure 5. Dark Current versus Ambient Temperature
Figure 6. Capacitances versus Voltage
Motorola Optoelectronics Device Data
3
H11AA1 H11AA2 H11AA3 H11AA4
PACKAGE DIMENSIONS
–A–
6
4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
DIM
A
B
C
D
E
F
G
J
K
L
M
N
INCHES
MIN
MAX
0.320
0.350
0.240
0.260
0.115
0.200
0.016
0.020
0.040
0.070
0.010
0.014
0.100 BSC
0.008
0.012
0.100
0.150
0.300 BSC
0
_
15
_
0.015
0.100
MILLIMETERS
MIN
MAX
8.13
8.89
6.10
6.60
2.93
5.08
0.41
0.50
1.02
1.77
0.25
0.36
2.54 BSC
0.21
0.30
2.54
3.81
7.62 BSC
0
_
15
_
0.38
2.54
–B–
1
3
F
4 PL
N
C
L
–T–
SEATING
PLANE
K
G
J
6 PL
0.13 (0.005)
T A
M
M
E
6 PL
D
6 PL
0.13 (0.005)
M
M
T B
M
A
M
B
M
STYLE 8:
PIN 1.
2.
3.
4.
5.
6.
LED 1 ANODE/LED 2 CATHODE
LED 1 CATHODE/LED 2 ANODE
NC
EMITTER
COLLECTOR
BASE
CASE 730A–04
ISSUE G
–A–
6
1
4
–B–
3
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN
MAX
0.320
0.350
0.240
0.260
0.115
0.200
0.016
0.020
0.040
0.070
0.010
0.014
0.100 BSC
0.020
0.025
0.008
0.012
0.006
0.035
0.320 BSC
0.332
0.390
MILLIMETERS
MIN
MAX
8.13
8.89
6.10
6.60
2.93
5.08
0.41
0.50
1.02
1.77
0.25
0.36
2.54 BSC
0.51
0.63
0.20
0.30
0.16
0.88
8.13 BSC
8.43
9.90
F
4 PL
H
C
L
–T–
G
E
6 PL
D
6 PL
0.13 (0.005)
M
J
K
6 PL
0.13 (0.005)
T A
M
M
SEATING
PLANE
T B
M
A
M
B
M
DIM
A
B
C
D
E
F
G
H
J
K
L
S
CASE 730C–04
ISSUE D
*Consult factory for leadform
option availability
4
Motorola Optoelectronics Device Data
H11AA1 H11AA2 H11AA3 H11AA4
–A–
6
4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
DIM
A
B
C
D
E
F
G
J
K
L
N
INCHES
MIN
MAX
0.320
0.350
0.240
0.260
0.115
0.200
0.016
0.020
0.040
0.070
0.010
0.014
0.100 BSC
0.008
0.012
0.100
0.150
0.400
0.425
0.015
0.040
MILLIMETERS
MIN
MAX
8.13
8.89
6.10
6.60
2.93
5.08
0.41
0.50
1.02
1.77
0.25
0.36
2.54 BSC
0.21
0.30
2.54
3.81
10.16
10.80
0.38
1.02
–B–
1
3
F
4 PL
N
C
L
–T–
SEATING
PLANE
G
D
6 PL
K
0.13 (0.005)
M
J
T A
M
E
6 PL
B
M
*Consult factory for leadform
option availability
CASE 730D–05
ISSUE D
Motorola Optoelectronics Device Data
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
