电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

C114T561K1X5CP

产品描述Multilayer Ceramic Capacitors MLCC - Leaded 560.PF 100V
产品类别无源元件    电容器   
文件大小1MB,共16页
制造商KEMET(基美)
官网地址http://www.kemet.com
下载文档 详细参数 全文预览

C114T561K1X5CP在线购买

供应商 器件名称 价格 最低购买 库存  
C114T561K1X5CP - - 点击查看 点击购买

C114T561K1X5CP概述

Multilayer Ceramic Capacitors MLCC - Leaded 560.PF 100V

C114T561K1X5CP规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称KEMET(基美)
包装说明AXIAL LEADED
Reach Compliance Codenot_compliant
ECCN代码EAR99
电容0.00056 µF
电容器类型CERAMIC CAPACITOR
直径2.29 mm
介电材料CERAMIC
JESD-609代码e0
长度4.06 mm
制造商序列号C114
安装特点THROUGH HOLE MOUNT
多层Yes
负容差10%
端子数量2
最高工作温度125 °C
最低工作温度-55 °C
封装形状TUBULAR PACKAGE
封装形式Axial
包装方法BULK
正容差10%
额定(直流)电压(URdc)100 V
参考标准MIL-PRF-39014/05
系列C(SIZE)T
表面贴装NO
温度特性代码X7R
温度系数15% ppm/°C
端子面层Tin/Lead (Sn60Pb40)
端子形状WIRE

文档预览

下载PDF文档
MULTILAYER CERAMIC CAPACITORS/AXIAL
& RADIAL LEADED
Multilayer ceramic capacitors are available in a
variety of physical sizes and configurations, including
leaded devices and surface mounted chips. Leaded
styles include molded and conformally coated parts
with axial and radial leads. However, the basic
capacitor element is similar for all styles. It is called a
chip and consists of formulated dielectric materials
which have been cast into thin layers, interspersed
with metal electrodes alternately exposed on opposite
edges of the laminated structure. The entire structure is
fired at high temperature to produce a monolithic
block which provides high capacitance values in a
small physical volume. After firing, conductive
terminations are applied to opposite ends of the chip to
make contact with the exposed electrodes.
Termination materials and methods vary depending on
the intended use.
TEMPERATURE CHARACTERISTICS
Ceramic dielectric materials can be formulated with
Class III:
General purpose capacitors, suitable
a wide range of characteristics. The EIA standard for
for by-pass coupling or other applications in which
ceramic dielectric capacitors (RS-198) divides ceramic
dielectric losses, high insulation resistance and
dielectrics into the following classes:
stability of capacitance characteristics are of little or
no importance. Class III capacitors are similar to Class
Class I:
Temperature compensating capacitors,
II capacitors except for temperature characteristics,
suitable for resonant circuit application or other appli-
which are greater than ± 15%. Class III capacitors
cations where high Q and stability of capacitance char-
have the highest volumetric efficiency and poorest
acteristics are required. Class I capacitors have
stability of any type.
predictable temperature coefficients and are not
affected by voltage, frequency or time. They are made
KEMET leaded ceramic capacitors are offered in
from materials which are not ferro-electric, yielding
the three most popular temperature characteristics:
superior stability but low volumetric efficiency. Class I
C0G:
Class I, with a temperature coefficient of 0 ±
capacitors are the most stable type available, but have
30 ppm per degree C over an operating
the lowest volumetric efficiency.
temperature range of - 55°C to + 125°C (Also
known as “NP0”).
Class II:
Stable capacitors, suitable for bypass
X7R:
Class II, with a maximum capacitance
or coupling applications or frequency discriminating
change of ± 15% over an operating temperature
circuits where Q and stability of capacitance char-
range of - 55°C to + 125°C.
acteristics are not of major importance. Class II
Z5U:
Class III, with a maximum capacitance
capacitors have temperature characteristics of ± 15%
change of + 22% - 56% over an operating tem-
or less. They are made from materials which are
perature range of + 10°C to + 85°C.
ferro-electric, yielding higher volumetric efficiency but
less stability. Class II capacitors are affected by
Specified electrical limits for these three temperature
temperature, voltage, frequency and time.
characteristics are shown in Table 1.
SPECIFIED ELECTRICAL LIMITS
Parameter
Dissipation Factor: Measured at following conditions.
C0G – 1 kHz and 1 vrms if capacitance >1000pF
1 MHz and 1 vrms if capacitance 1000 pF
X7R – 1 kHz and 1 vrms* or if extended cap range 0.5 vrms
Z5U – 1 kHz and 0.5 vrms
Dielectric Stength: 2.5 times rated DC voltage.
Insulation Resistance (IR): At rated DC voltage,
whichever of the two is smaller
Temperature Characteristics: Range, °C
Capacitance Change without
DC voltage
* MHz and 1 vrms if capacitance
100 pF on military product.
Temperature Characteristics
C0G
X7R
2.5%
(3.5% @ 25V)
Z5U
0.10%
4.0%
Pass Subsequent IR Test
1,000 M
F
or 100 G
-55 to +125
0 ± 30 ppm/°C
1,000 M
F
or 100 G
-55 to +125
± 15%
1,000 M
or 10 G
F
+ 10 to +85
+22%,-56%
Table I
4
© KEMET Electronics Corporation, P.O. Box 5928, Greenville, S.C. 29606, (864) 963-6300
s3c2410开发板telnet不能访问到的问题
我的arm9开发板开通了telnet,pc下的linux也开通了telnet,pc的IP地址设为192.168.1.13,开发板IP地址设为192.168.1.33,我用交叉网线连接pc机的网口和开发板的网口,在linux的minicom下面启动 ......
susion 嵌入式系统
赚分,让我沉吧
0...
stubbornwn 嵌入式系统
【连载】【ALIENTEK 战舰STM32开发板】STM32开发指南--第五十一章 手写识别实验
第五十一章 手写识别实验 现在几乎所有带触摸屏的手机都能实现手写识别。本章,我们将利用ALIENTEK提供的手写识别库,在ALIENTEK战舰STM32开发板上实现一个简单的数字字母手写识别。本章分 ......
正点原子 stm32/stm8
揭晓:ST传感器移植大赛+骨振动传感器评测 评审结果
活动详情:点此查看 感谢所有网友的参与,下面揭晓本次大赛的评委打分。根据>>本次大赛评审细则中的说明,共有2名参赛网友(sylar^z和dcexpert)总分高于100分,除获得X-NUCLEO-IKS0 ......
nmg MEMS传感器
新人来了!!跟给位学习了!!望各位多多指教!!
新人来了!!跟给位学习了!!望各位多多指教!!...
fdlz520 无线连接
浙江大学嵌入式系列技术高级学习班7月-8月开课时间表
浙江大学专业技术培训²²咨询报名:邱老师0571-85622860(白天)、13777811228,²13205718120,0571-88230155(晚上)浙大公开课程时间学费教师20061FPGA高级全程班8月12-16 ......
shilina 嵌入式系统

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 16  845  2597  1261  735  1  18  53  26  15 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved