NTJD4105C
Small Signal MOSFET
20 V /
−8.0
V, Complementary,
+0.63 A /
−0.775
A, SC−88
Features
•
•
•
•
•
•
•
•
•
Complementary N and P Channel Device
Leading
−8.0
V Trench for Low R
DS(on)
Performance
ESD Protected Gate
−
ESD Rating: Class 1
SC−88 Package for Small Footprint (2 x 2 mm)
Pb−Free Packages are Available
DC−DC Conversion
Load/Power Switching
Single or Dual Cell Li−Ion Battery Supplied Devices
Cell Phones, MP3s, Digital Cameras, PDAs
Parameter
Symbol
N−Ch
P−Ch
N−Ch
P−Ch
N−Ch
P−Ch
N−Ch
P−Ch
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 85°C
tp
≤
10
ms
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 85°C
T
J
,
T
STG
I
S
T
L
I
DM
P
D
V
DSS
V
GS
I
D
Value
20
−8.0
±12
±8.0
0.63
0.46
−0.775
−0.558
0.91
0.65
−1.1
−0.8
±1.2
0.27
0.14
0.55
0.29
−55
to
150
0.63
−0.775
260
°C
°C
A
A
W
A
V
Unit
V
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V
(BR)DSS
N−Ch 20 V
R
DS(on)
TYP
0.29
W
@ 4.5 V
0.36
W
@ 2.5 V
0.22
W
@
−4.5
V
P−Ch
−8.0
V
0.32
W
@
−2.5
V
0.51
W
@
−1.8
V
−0.775
A
0.63 A
I
D
Max
Applications
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current
−
Steady State
(Based on R
qJA
)
SOT−363
SC−88 (6−LEADS)
S
1
1
6
D
1
G
1
2
5
G
2
Continuous Drain Current
−
Steady State
(Based on R
qJL
)
D
2
3
Top View
4
S
2
Pulsed Drain Current
Power Dissipation
−
Steady State
(Based on R
qJA
)
Power Dissipation
−
Steady State
(Based on R
qJL
)
MARKING DIAGRAM &
PIN ASSIGNMENT
D1 G2 S2
6
1
Operating Junction and Storage Temperature
Source Current (Body Diode)
N−Ch
P−Ch
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
THERMAL RESISTANCE RATINGS
(Note 1)
Junction−to−Ambient
– Steady State
Junction−to−Lead (Drain)
– Steady State
Typ
Max
Typ
Max
SC−88/SOT−363
CASE 419B
STYLE 28
1
TC M
G
G
S1 G1 D2
R
qJA
R
qJL
400
460
194
226
°C/W
TC
M
G
= Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.
©
Semiconductor Components Industries, LLC, 2006
March, 2006
−
Rev. 2
1
Publication Order Number:
NTJD4105C/D
NTJD4105C
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source
Breakdown Voltage
Drain−to−Source Breakdown
Voltage Temperature Coeffi-
cient
Zero Gate Voltage Drain Cur-
rent
Gate−to−Source
Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Gate Threshold
Temperature Coefficient
Drain−to−Source On Resist-
ance
V
GS(TH)
V
GS(TH)
/
T
J
R
DS(on)
N
P
N
P
N
P
N
P
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
V
GS
= 4.5 V, V
DD
= 10 V,
I
D
= 0.5 A, R
G
= 20
W
P
V
GS
=
−4.5
V, V
DD
=
−4.0
V,
I
D
=
−0.5
A, R
G
= 8.0
W
V
GS
= V
DS
I
D
= 250
mA
I
D
=
−250
mA
0.6
−0.45
0.92
−0.83
−2.1
2.2
0.29
0.22
0.36
0.32
0.51
2.0
2.0
33
160
13
38
2.8
28
1.3
2.2
0.1
0.1
0.2
0.5
0.4
0.5
0.083
0.227
0.786
0.506
0.013
0.023
0.050
0.036
0.76
0.76
0.63
0.63
0.410
0.078
1.1
1.1
1.5
−1.0
V
−mV/
°C
0.375
0.30
0.445
0.46
0.90
W
V
(BR)DSS
V
(BR)DSS
/ T
J
I
DSS
I
GSS
N
P
N
P
N
P
N
P
V
GS
= 0 V, V
DS
= 16 V
V
GS
= 0 V, V
DS
=
−6.4
V
V
DS
= 0 V
T
J
= 25
°C
V
GS
=
±12
V
V
GS
=
±8.0
V
GS
= 0 V
I
D
= 250
mA
I
D
=
−250
mA
20
−8.0
27
−10.5
22
−6.0
1.0
1.0
10
10
mA
mA
V
mV/
°C
Symbol
N/P
Test Condition
Min
Typ
Max
Units
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
g
FS
V
GS
= 4.5 V I
D
= 0.63 A
V
GS
=
−4.5
V, I
D
=
−0.57
A
V
GS
= 2.5 V, I
D
= 0.40 A
V
GS
=
−2.5
V, I
D
=
−0.48
A
V
GS
=
−1.8
V, I
D
=
−0.20
A
V
DS
= 4.0 V I
D
= 0.63 A
V
DS
=
−4.0
V, I
D
=
−0.57
A
V
DS
= 20 V
V
DS
=
−8.0V
V
DS
= 20 V
f = 1 MHz, V
GS
= 0 V
V
DS
=
−8.0
V
V
DS
= 20 V
V
DS
=
−8.0
V
V
GS
= 4.5 V, V
DS
= 10 V, I
D
= 0.7 A
V
GS
=
−4.5
V, V
DS
=
−5.0
V, I
D
=
−0.6
A
V
GS
= 4.5 V, V
DS
= 10 V, I
D
= 0.7 A
V
GS
=
−4.5
V, V
DS
=
−5.0
V, I
D
=
−0.6
A
V
GS
= 4.5 V, V
DS
= 10 V, I
D
= 0.7 A
V
GS
=
−4.5
V, V
DS
=
−5.0
V, I
D
=
−0.6
A
V
GS
= 4.5 V, V
DS
= 10 V, I
D
= 0.7 A
V
GS
=
−4.5
V, V
DS
=
−5.0
V, I
D
=
−0.6
A
S
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
46
225
22
55
5.0
40
3.0
4.0
pF
nC
SWITCHING CHARACTERISTICS
(Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
t
d(ON)
t
r
t
d(OFF)
t
f
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
ms
DRAIN−SOURCE DIODE CHARACTERISTICS
N
P
N
P
N
P
V
GS
= 0 V, T
J
= 25°C
V
GS
= 0 V, T
J
= 125°C
V
GS
= 0 V,
d
IS
/d
t
= 90 A/ms
I
S
= 0.23 A
I
S
=
−0.23
A
I
S
= 0.23 A
I
S
=
−0.23
A
I
S
= 0.23 A
I
S
=
−0.23
A
V
Reverse Recovery Time
t
RR
ms
2. Pulse Test: pulse width
≤
300
ms,
duty cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
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NTJD4105C
TYPICAL N−CHANNEL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
1.4
I
D,
DRAIN CURRENT (AMPS)
1.2
1
0.8
0.6
0.4
1.4 V
0.2
0
0
2
4
6
1.2 V
8
10
0
0
1.6 V
V
GS
= 4.5 V to 2.2 V
V
GS
= 2 V
1.8 V
T
J
= 25°C
I
D,
DRAIN CURRENT (AMPS)
1.2
V
DS
≥
10 V
1
0.8
0.6
0.4
0.2
T
J
= 125°C
25°C
T
J
=
−55°C
0.4
0.8
1.2
2
1.6
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
2.4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.7
0.6
0.5
0.4
T
J
= 25°C
T
J
=
−55°C
T
J
= 125°C
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.2
Figure 2. Transfer Characteristics
V
GS
= 4.5 V
V
GS
= 2.5 V
T
J
= 125°C
T
J
= 25°C
T
J
=
−55°C
0.3
0.2
0.1
0
0
0.2
0.4
1
0.8
0.6
I
D,
DRAIN CURRENT (AMPS)
1.2
1.4
0.6
0.4
1
0.8
I
D,
DRAIN CURRENT (AMPS)
1.2
1.4
Figure 3. On−Resistance vs. Drain Current and
Temperature
2
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.8
1.6
1.4
1.2
1
0.8
0.6
−50
−25
0
25
50
75
100
125
150
0
I
D
= 0.63 A
V
GS
= 4.5 V
and 2.5 V
80
Figure 4. On−Resistance vs. Drain Current and
Temperature
T
J
= 25°C
V
GS
= 0 V
C, CAPACITANCE (pF)
60
40
C
iss
20
C
oss
C
rss
0
5
10
15
20
T
J
, JUNCTION TEMPERATURE (°C)
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
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NTJD4105C
TYPICAL N−CHANNEL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
5
4
3
2
1
0
Q
GS
Q
GD
0.7
I
S
, SOURCE CURRENT (AMPS)
0.6
0.5
0.4
0.3
0.2
0.1
0
1.4
0
0.2
0.4
0.6
T
J
= 150°C
T
J
= 25°C
0.8
1
V
GS
= 0 V
Q
G(TOT)
V
GS
I
D
= 0.63 A
T
J
= 25°C
0
0.2
0.4
0.6
0.8
1
Q
g
, TOTAL GATE CHARGE (nC)
1.2
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 7. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 8. Diode Forward Voltage vs. Current
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NTJD4105C
TYPICAL P−CHANNEL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
1.4
−I
D,
DRAIN CURRENT (AMPS)
1.2
1
0.8
0.6
0.4
0.2
0
0
2
4
6
−1.6
V
V
GS
=
−4.5
V to
−2.6
V
V
GS
=
−2.2
V
−2
V
T
J
= 25°C
−I
D,
DRAIN CURRENT (AMPS)
−1.8
V
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
T
J
= 125°C
25°C
T
J
=
−55°C
1.6
0.4
0.8
1.2
2
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
2.4
V
DS
≥
−10
V
−1.4
V
−1.2
V
8
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 9. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.5
0.5
0.4
0.3
0.2
0.1
0
0
Figure 10. Transfer Characteristics
V
GS
=
−4.5
V
V
GS
=
−2.5
V
T
J
= 125°C
T
J
= 25°C
T
J
=
−55°C
0.4
0.3
0.2
T
J
= 125°C
T
J
= 25°C
T
J
=
−55°C
0.1
0
0
0.2
0.6
0.8
0.4
1
−I
D,
DRAIN CURRENT (AMPS)
1.2
1.4
0.2
0.6
0.4
0.8
1
−I
D,
DRAIN CURRENT (AMPS)
1.2
1.4
Figure 11. On−Resistance vs. Drain Current
and Temperature
1.6
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.4
1.2
1
0.8
0.6
−50
I
D
=
−0.7
A
V
GS
=
−4.5
V
and
−2.5
V
300
240
Figure 12. On−Resistance vs. Drain Current
and Temperature
T
J
= 25°C
V
GS
= 0 V
C
iss
C, CAPACITANCE (pF)
180
120
C
oss
60
0
−8
C
rss
−6
−4
−2
0
−25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
Figure 13. On−Resistance Variation with
Temperature
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
Figure 14. Capacitance Variation
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