NTMD6P02, NVMD6P02
Power MOSFET
6 A, 20 V, P−Channel SOIC−8, Dual
Features
•
•
•
•
•
•
•
•
Ultra Low R
DS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature Dual SOIC−8 Surface Mount Package
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
These Devices are Pb−Free and are RoHS Compliant
NVMD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
www.onsemi.com
6 AMPERES, 20 VOLTS
P−Channel
D
Applications
•
Power Management in Portable and Battery−Powered Products,
i.e.: Cellular and Cordless Telephones, and PCMCIA Cards
MAXIMUM RATINGS
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance −
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
Thermal Resistance −
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
Thermal Resistance −
Junction−to−Ambient (Note 3)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C (V
DD
= −20 Vdc,
V
GS
= −5.0 Vdc, Peak I
L
= −5.0 Apk,
L = 40 mH, R
G
= 25
W)
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
Symbol
V
DSS
V
GS
R
qJA
P
D
I
D
I
D
P
D
I
D
I
DM
R
qJA
P
D
I
D
I
D
P
D
I
D
I
DM
R
qJA
P
D
I
D
I
D
P
D
I
D
I
DM
T
J
, T
stg
E
AS
Value
−20
"12
62.5
2.0
−7.8
−5.7
0.5
−3.89
−40
98
1.28
−6.2
−4.6
0.3
−3.01
−35
166
0.75
−4.8
−3.5
0.2
−2.48
−30
−55 to
+150
500
Unit
V
V
°C/W
W
A
A
W
A
A
°C/W
W
A
A
W
A
A
°C/W
W
A
A
W
A
A
°C
mJ
8
1
G
S
MARKING DIAGRAM &
PIN ASSIGNMENT
D1 D1 D2 D2
8
SOIC−8
CASE 751
STYLE 11
E6P02
AYWW
G
G
1
S1 G1 S2 G2
E6P02
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTMD6P02R2G
NVMD6P02R2G
Package
SOIC−8
(Pb−Free)
SOIC−8
(Pb−Free)
Shipping
†
2500 / Tape & Reel
2500 / Tape & Reel
T
L
260
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz. Cu 0.06″ thick single sided), t = 10 seconds.
2. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz. Cu 0.06″ thick single sided), t = steady state.
3. Minimum FR−4 or G−10 PCB, t = steady state.
4. Pulse Test: Pulse Width = 300
ms,
Duty Cycle = 2%.
©
Semiconductor Components Industries, LLC, 2015
1
April, 2015 − Rev. 5
Publication Order Number:
NTMD6P02R2/D
NTMD6P02, NVMD6P02
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)*
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= −250
mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
DS
= −20 Vdc, V
GS
= 0 Vdc, T
J
= 25°C)
(V
DS
= −20 Vdc, V
GS
= 0 Vdc, T
J
= 70°C)
Gate−Body Leakage Current
(V
GS
= −12 Vdc, V
DS
= 0 Vdc)
Gate−Body Leakage Current
(V
GS
= +12 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= −250
mAdc)
Temperature Coefficient (Negative)
Static Drain−to−Source On−State Resistance
(V
GS
= −4.5 Vdc, I
D
= −6.2 Adc)
(V
GS
= −2.5 Vdc, I
D
= −5.0 Adc)
(V
GS
= −2.5 Vdc, I
D
= −3.1 Adc)
Forward Transconductance (V
DS
= −10 Vdc, I
D
= −6.2 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Notes 5 and 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
BODY−DRAIN DIODE RATINGS
(Note 5)
Diode Forward On−Voltage
Diode Forward On−Voltage
Reverse Recovery Time
(I
S
= −1.7 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms)
Reverse Recovery Stored Charge
5. Indicates Pulse Test: Pulse Width = 300
ms
max, Duty Cycle = 2%.
6. Switching characteristics are independent of operating junction temperature.
*Handling precautions to protect against electrostatic discharge are mandatory.
(I
S
= −1.7 Adc, V
GS
= 0 Vdc)
(I
S
= −1.7 Adc, V
GS
= 0 Vdc, T
J
= 125°C)
(I
S
= −6.2 Adc, V
GS
= 0 Vdc)
(I
S
= −6.2 Adc, V
GS
= 0 Vdc, T
J
= 125°C)
V
SD
V
SD
t
rr
t
a
t
r
Q
RR
−
−
−
−
−
−
−
−
−0.80
−0.65
−0.95
−0.80
50
20
30
0.04
−1.2
−
−
−
80
−
−
−
mC
Vdc
Vdc
ns
(V
DS
= −16 Vdc,
V
GS
= −4.5 Vdc,
I
D
= −6.2 Adc)
(V
DD
= −16 Vdc, I
D
= −6.2 Adc,
V
GS
= −4.5 Vdc,
R
G
= 6.0
W)
(V
DD
= −10 Vdc, I
D
= −1.0 Adc,
V
GS
= −10 Vdc,
R
G
= 6.0
W)
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Q
tot
Q
gs
Q
gd
−
−
−
−
−
−
−
−
−
−
−
15
20
85
50
17
65
50
80
20
4.0
8.0
25
50
125
110
−
−
−
−
35
−
−
nC
ns
ns
(V
DS
= −16 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
C
oss
C
rss
−
−
−
1380
515
250
1700
775
450
pF
V
GS(th)
−0.6
−
R
DS(on)
−
−
−
g
FS
−
0.027
0.038
0.038
15
0.033
0.050
−
−
Mhos
−0.88
2.6
−1.20
−
Vdc
mV/°C
W
V
(BR)DSS
−20
−
I
DSS
−
−
I
GSS
−
I
GSS
−
−
100
−
−100
nAdc
−
−
−1.0
−5.0
nAdc
−
−11.6
−
−
Vdc
mV/°C
mAdc
Symbol
Min
Typ
Max
Unit
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2
NTMD6P02, NVMD6P02
12
−ID, DRAIN CURRENT (AMPS)
10
8.0
−3.1 V
6.0
4.0
2.0
0
−1.5 V
V
GS
= −1.3 V
0
0.25
0.50
0.75
1.00
1.25
1.50
1.75
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−2.5 V
−1.8 V
−10 V
−4.5 V
−3.8 V
−2.1 V
−ID, DRAIN CURRENT (AMPS)
10
V
DS
≥
−10 V
8.0
T
J
= 25°C
6.0
25°C
4.0
100°C
2.0
0
T
J
= −55°C
0
1.0
1.5
2.0
2.5
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.05
I
D
= −6.2 A
T
J
= 25°C
0.05
T
J
= 25°C
0.04
V
GS
= −2.5 V
−2.7 V
0.03
−4.5 V
0.04
0.03
0.02
0.01
0
0.02
0
2.0
4.0
6.0
8.0
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
10
0.01
0
2.0
8.0
10
4.0
6.0
−I
D
, DRAIN CURRENT (AMPS)
12
14
Figure 3. On−Resistance versus
Gate−To−Source Voltage
Figure 4. On-Resistance versus Drain Current
and Gate Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
1.6
I
D
= −6.2 A
V
GS
= −4.5 V
1000
V
GS
= 0 V
T
J
= 125°C
100°C
−I DSS , LEAKAGE (nA)
1.4
100
1.2
10
1
1
25°C
0.1
0.01
0.8
0.6
−50
−25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
150
4
8
12
16
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
20
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−To−Source Leakage Current
versus Voltage
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3
NTMD6P02, NVMD6P02
VGS , GATE−TO−SOURCE VOLTAGE (VOLTS)
5000
4500
C, CAPACITANCE (pF)
4000
3500
3000
2500
2000
1500
1000
500
0
10
5.0
0
5.0
−V
GS
−V
DS
10
15
20
C
rss
C
iss
C
oss
C
rss
C
iss
V
DS
= 0 V
V
GS
= 0 V
T
J
= 25°C
5
QT
4
V
DS
3
Q1
Q2
V
GS
12
16
20
V DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
2
I
D
= −6.2 A
V
DS
= −16 V
V
GS
= −4.5 V
T
J
= 25°C
0
5.0
10
15
20
25
8
1
0
4
0
Q
g
, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
V
DD
= −16 V
I
D
= −1.0 A
V
GS
= −10 V
t, TIME (ns)
Figure 8. Gate−To−Source
and Drain−To−Source Voltage versus Total Charge
1000
V
DD
= −16 V
I
D
= −6.2 A
V
GS
= −4.5 V
t
d(off)
t, TIME (ns)
t
f
100
t
r
100
t
f
t
r
t
d(off)
t
d(on)
10
1
10
R
G
, GATE RESISTANCE (OHMS)
100
10
1
t
d(on)
10
R
G
, GATE RESISTANCE (OHMS)
100
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
5
−IS, SOURCE CURRENT (AMPS)
−ID , DRAIN CURRENT (AMPS)
V
GS
= 0 V
T
J
= 25°C
100
4
V
GS
= 2.5 V
SINGLE PULSE
T
C
= 25°C
1.0 ms
10
10 ms
1
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
3
2
1
0
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
dc
100
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Diode Forward Voltage versus Current
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
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