TGF2819-FS
DC – 4 GHz, 50 V, 200 W GaN RF Transistor
Product Overview
The Qorvo TGF2819-FS is a greater-than 200 W (P
3dB
)
discrete GaN on SiC HEMT which operates from DC to 4
GHz. The device is in an industry standard air cavity package
and is ideally suited for IFF, avionics, military and civilian
radar, and test instrumentation. The device can support
pulsed and linear operations.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
NI-360 Package
Key Features
Functional Block Diagram
•
•
•
•
•
•
Frequency: DC to 4 GHz
Output Power (P
3dB
)
1
: 257 W
Linear Gain
1
: 18 dB
Typical PAE
3dB1
: 67.5%
Operating Voltage: 50 V
CW and Pulse capable
Note 1: @ 3 GHz Load Pull
Applications
•
•
•
•
•
Military and civilian radar
Professional and military radio communications
Test instrumentation
Wideband or narrowband amplifiers
Jammers
Ordering info
Part No.
TGF2819-FS
TGF2819-
FSPCB4B01
TGF2819-
FSEVB03
ECCN
3A001.b.3.a
EAR99
EAR99
Description
DC –4 GHz, 50 V, 200 W GaN
RF Transistor
3.1 – 3.5 GHz EVB
1.35 – 1.75 GHz EVB
Datasheet Rev. C, August 30, 2017 | Subject to change without notice
-
1 of 27
-
www.qorvo.com
TGF2819-FS
DC – 4 GHz, 50 V, 200 W GaN RF Transistor
Absolute Maximum Ratings
1
Parameter
Breakdown Voltage,BV
DG
Gate Voltage Range, V
G
Drain Current, I
DMAX
Gate Current Range, I
G
Power Dissipation, P
DISS
RF Input Power, CW, T =
25 °
2
C
Channel Temperature, T
CH
Mounting Temperature
(30 Seconds)
Storage Temperature
Recommended Operating Conditions
1
Units
V
V
A
mA
W
dBm
°
C
°
C
°
C
Rating
+145
-7 to +2.0
12
See page 20.
207
2
+39.8
275
320
−65 to +150
Parameter
Operating Temp. Range
Drain Voltage Range, V
D
Drain Bias Current, I
DQ
Drain Current, I
D4
Gate Voltage, V
G3
Channel Temperature (T
CH
)
Power Dissipation (P
D
)
2,4
Power Dissipation (P
D
), CW
2
Min
−40
+32
–
–
–
–
–
Typ
+25
+50
250
7.2
−2.8
–
–
–
Max Units
+85
+55
–
–
250
184
98
°
C
V
mA
A
V
°
C
W
W
Notes:
1.
Operation of this device outside the parameter ranges
given above may cause permanent damage.
2.
Pulsed 100uS PW, 20% DC
Notes:
1.
Electrical performance is measured under conditions noted
in the electrical specifications table. Specifications are not
guaranteed over all recommended operating conditions.
2.
Package base at 85 °
C
3.
To be adjusted to desired I
DQ
4.
Pulsed, 100uS PW, 20% DC
Measured Load Pull Performance – Power Tuned
1
Parameter
Frequency, F
Drain Voltage, V
D
Drain Bias Current, I
DQ
Output Power at 3dB
compression, P
3dB
Power Added Efficiency at 3dB
compression, PAE
3dB
Gain at 3dB compression, G
3dB
Notes:
1.
2.
Typical Values
2.7
50
200
54
60.0
13.9
2.9
50
200
53.5
53.7
14.3
3.1
50
200
53.2
46.0
13.3
3.3
50
200
53
48.8
16.5
3.5
50
200
53
43
14
3.7
50
200
52.7
51.4
15.5
Units
GHz
V
mA
dBm
%
dB
Pulsed, 100 uS Pulse Width, 20% Duty Cycle
Characteristic Impedance, Zo = 7 .
Measured Load Pull Performance – Efficiency Tuned
1
Parameter
Frequency, F
Drain Voltage, V
D
Drain Bias Current, I
DQ
Output Power at 3dB
compression, P
3dB
Power Added Efficiency at 3dB
compression, PAE
3dB
Gain at 3dB compression, G
3dB
Notes:
1.
2.
Typical Values
2.7
50
200
52.5
65.5
15.8
2.9
50
200
53.2
64.3
15.5
3.1
50
200
52.6
54.4
15.5
3.3
50
200
52.1
52.2
17.8
3.5
50
200
52.3
53.7
16.1
3.7
50
200
51.9
53.9
15.9
Units
GHz
V
mA
dBm
%
dB
Pulsed, 100 uS Pulse Width, 20% Duty Cycle
Characteristic Impedance, Zo = 7 .
Datasheet Rev. C, August 30, 2017 | Subject to change without notice
-
2 of 27
-
www.qorvo.com
TGF2819-FS
DC – 4 GHz, 50 V, 200 W GaN RF Transistor
3.1 – 3.5 GHz EVB – 3.5 GHz Performance
1
Parameter
Linear Gain, G
LIN
Output Power at 3dB compression point, P3dB
Drain Efficiency at 3dB compression point,
DEFF3dB
Gain at 3dB compression point, G3dB
Notes:
Min
–
–
–
–
Typ
15.1
126
52.4
12.1
Max
–
–
–
–
Units
dB
W
%
dB
1.
V
D
= +32 V, I
DQ
= 250 mA, Temp = +25 °C, Pulse Width = 100 uS, Duty Cycle = 20%
RF Characterization – Mismatch Ruggedness at 3.5 GHz
Symbol Parameter
VSWR
Impedance Mismatch Ruggedness
dB Compression
3
Typical
10:1
Test conditions unless otherwise noted: T
A
= 25 ° V
D
= 32 V, I
DQ
= 250 mA
C,
Input drive power is determined at pulsed 3dB compression under matched condition at EVB output connector.
Datasheet Rev. C, August 30, 2017 | Subject to change without notice
-
3 of 27
-
www.qorvo.com
TGF2819-FS
DC – 4 GHz, 50 V, 200 W GaN RF Transistor
Measured Load-Pull Smith Charts
1, 2
Notes:
1. Test Conditions: V
D
= 50 V, I
DQ
= 200 mA, 100 uS Pulse Width, 20% Duty Cycle
2. See page 22 for load pull reference planes where the performance was measured.
2.7GHz, Load-pull
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Zs(1fo) = 1.39-6.25i
Ω
Zs(2fo) = 2.32-5.19i
Ω
Zs(3fo) = 0.82-6.08i
Ω
Zl(3fo) = 8.42-7.55i
Ω
•
Max Power is 54dBm
at Z = 2.08-2.94i
Ω
Γ
= -0.3955-0.4519i
•
Max Gain is 16.5dB
at Z = 1.78-0.86i
Ω
Γ
= -0.5794-0.1547i
•
Max PAE is 65.5%
at Z = 1.84-1.52i
Ω
Γ
= -0.5382-0.2645i
16.3
15.8
65.2
59.2
60.2
61.2
14.3
54
13.8
13.3
53.8
53.6
Zo = 7
Ω
3dB Compression Referenced to Peak Gain
Power
Gain
PAE
Datasheet Rev. C, August 30, 2017 | Subject to change without notice
-
4 of 27
-
www.qorvo.com
TGF2819-FS
DC – 4 GHz, 50 V, 200 W GaN RF Transistor
Measured Load-Pull Smith Charts
1, 2
Notes:
1. Test Conditions: V
D
= 50 V, I
DQ
= 200 mA, 100 uS Pulse Width, 20% Duty Cycle
2. See page 22 for load pull reference planes where the performance was measured.
2.9GHz, Load-pull
Zs(1fo) = 2.34-7.92i
Ω
Zs(2fo) = 3.11-6i
Ω
Zs(3fo) = 0.39+2.63i
Ω
Zl(2fo) = 1.54-3.17i
Ω
Zl(3fo) = 0.51+6.08i
Ω
16.2
•
Max Power is 53.5dBm
at Z = 2.81-2.94i
Ω
Γ
= -0.3095-0.3924i
•
Max Gain is 16.6dB
at Z = 1.78-0.86i
Ω
Γ
= -0.5794-0.1547i
•
Max PAE is 64.3%
at Z = 2.52-1.84i
Ω
Γ
= -0.4176-0.274i
63.5
14.7
14.2
54.5
53.5
52.5
53.3
53.1
53.5
13.7
.4
-0
Zo = 7
Ω
3dB Compression Referenced to Peak Gain
Power
Gain
PAE
Datasheet Rev. C, August 30, 2017 | Subject to change without notice
-
5 of 27
-
www.qorvo.com
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
