IRGS4640DPbF
IRGSL4640DPbF
IRGB4640DPbF
IRGP4640D(-E)PbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
V
CES
= 600V
I
C
= 40A, T
C
=100°C
t
SC
≥
5µs, T
J(max)
= 175°C
V
CE(ON)
typ. = 1.60V @ I
C
= 24A
Applications
•
Industrial Motor Drive
•
Inverters
•
UPS
•
Welding
G
E
C
C
G
E
E
C
G
IRGSL4640DPbF
TO-262Pak
E
C
G
IRGB4640DPbF
TO-220AC
C
G
E
C
G
E
n-channel
G
Gate
IRGS4640DPbF
D
2
Pak
IRGP4640DPbF IRGP4640D-EPbF
TO-247AD
TO-247AC
C
Collector
E
Emitter
Features
Low V
CE(ON)
and switching losses
Square RBSOA and maximum junction temperature 175°C
Positive V
CE (ON)
temperature coefficient
5µs Short Circuit SOA
Lead-Free, RoHS Compliant
Base part number
IRGS4640DPbF
IRGSL4640DPbF
IRGB4640DPbF
IRGP4640DPbF
IRGP4640D-EPbF
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
GE
= 15V
Clamped Inductive Load Current, V
GE
= 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate to Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec. (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw (TO-220, TO-247)
Package Type
D Pak
TO-262
TO-220AB
TO-247AC
TO-247AD
2
Benefits
High efficiency in a wide range of applications and switching
Improved reliability due to rugged hard switching
performance and high power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Environmentally friendly
Orderable Part Number
IRGS4640DPbF
IRGS4640DTRRPbF
IRGS4640DTRLPbF
IRGSL4640DPbF
IRGB4640DPbF
IRGP4640DPbF
IRGP4640D-EPbF
Max.
600
65
40
72
96
65
40
96
±20
±30
250
125
-55 to +175
300
10 lbf·in (1.1 N·m)
Units
V
A
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Right
800
Tape and Reel Left
800
Tube
50
Tube
50
Tube
25
Tube
25
V
W
C
Notes
through
are on page 8
1
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January 20, 2015
IRGS/SL/B/P4640D/EPbF
Thermal Resistance
Parameter
Thermal Resistance Junction-to-Case (D
2
Pak, TO-220, TO-262)
R
θJC
(IGBT)
R
θJC
(Diode)
R
θCS
Thermal Resistance Junction-to-Case (TO-247)
Thermal Resistance Junction-to-Case (D
2
Pak, TO-220, TO-262)
Thermal Resistance Junction-to-Case (TO-247)
Thermal Resistance, Case-to-Sink (flat, greased surface– TO 220, D
2
Pak, TO-262)
Thermal Resistance, Case-to-Sink (flat, greased surface– TO 247)
Thermal Resistance, Junction-to-Ambient (PCB Mount - D
2
Pak, TO-262)
R
θJA
Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-247)
Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220)
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
0.50
0.24
–––
–––
–––
Max. Units
0.60
0.60
1.53
1.62
–––
–––
40
40
62
°C/W
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
—
V
CE(on)
V
GE(th)
ΔV
GE(th)
/ΔT
J
gfe
I
CES
I
GES
V
FM
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage Temp. Coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
—
—
4.0
—
—
—
—
—
—
—
—
0.30
1.60
1.90
2.0
—
-18
17
2.0
775
—
1.8
1.28
ΔV
(BR)CES
/ΔT
J
Temperature Coeff. of Breakdown Voltage
Max.
—
—
1.90
—
—
6.5
—
—
25
—
±100
2.6
—
Units
V
Conditions
V
GE
= 0V, I
C
= 100µA
I
C
= 24A, V
GE
= 15V, T
J
= 25°C
V/°C V
GE
= 0V, I
C
= 1mA (25°C-175°C)
V
V
S
µA
I
C
= 24A, V
GE
= 15V, T
J
= 150°C
I
C
= 24A, V
GE
= 15V, T
J
= 175°C
V
CE
= V
GE
, I
C
= 700µA
V
CE
= 50V, I
C
= 24A, PW = 80µs
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
nA
V
V
GE
= ±20V
I
F
= 24A
I
F
= 24A, T
J
= 175°C
mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C-175°C)
2
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IRGS/SL/B/P4640D/EPbF
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Total Gate Charge
—
50
Q
g
Gate-to-Emitter Charge
—
13
Q
ge
Q
gc
Gate-to-Collector Charge
—
21
E
on
Turn-On Switching Loss
—
115
E
off
Turn-Off Switching Loss
—
600
Total Switching Loss
—
715
E
total
t
d(on)
Turn-On delay time
—
41
t
r
Rise time
—
22
Turn-Off delay time
—
104
t
d(off)
t
f
Fall time
—
29
Turn-On Switching Loss
—
420
E
on
Turn-Off Switching Loss
—
840
E
off
Total Switching Loss
—
1260
E
total
Turn-On delay time
—
40
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
I
rr
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
5.0
—
—
—
—
—
—
—
—
—
24
125
39
1490
129
45
Max
75
20
31
201
700
901
53
31
115
41
—
—
—
—
—
—
—
—
—
—
Units
nC
I
C
= 24A
V
GE
= 15V
V
CC
= 400V
Conditions
µJ
I
C
= 24A, V
CC
= 400V, V
GE
=15V
R
G
= 10Ω, L = 200µH, L
S
= 150nH,
T
J
= 25°C
Energy losses include tail & diode
reverse recovery
I
C
= 24A, V
CC
= 400V, V
GE
=15V
R
G
= 10Ω, L = 200µH, L
S
= 150nH,
T
J
= 175°C
Energy losses include tail & diode
reverse recovery
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
T
J
= 175°C, I
C
= 96A
V
CC
= 480V, Vp
≤
600V
R
G
= 10Ω, V
GE
= +20V to 0V
V
CC
= 400V, Vp
≤
600V
R
G
= 10Ω, V
GE
= +15V to 0V
T
J
= 175°C
V
CC
= 400V, I
F
= 24A, V
GE
= 15V,
Rg = 10Ω, L = 200µH, L
S
= 150nH
ns
µJ
ns
pF
FULL SQUARE
—
621
89
37
—
—
—
—
µs
µJ
ns
A
3
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January 20, 2015
IRGS/SL/B/P4640D/EPbF
70
60
50
300
250
200
Ptot (W)
25
50
75
100
T C (°C)
125
150
175
IC (A)
40
30
20
10
0
150
100
50
0
25
50
75
100
T C (°C)
125
150
175
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
1000
Fig. 2
- Power Dissipation vs.
Case Temperature
1000
100
100
10µsec
IC (A)
10
100µsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
VCE (V)
1000
10000
1msec
DC
IC (A)
10
1
10
100
VCE (V)
1000
Fig. 3
- Forward SOA
T
C
= 25°C; T
J
≤
175°C; V
GE
= 15V
90
80
70
60
ICE (A)
90
80
Fig. 4
- Reverse Bias SOA
T
J
= 175°C; V
GE
= 20V
40
30
20
10
0
0
1
2
3
4
VCE (V)
5
6
7
8
ICE (A)
50
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
70
60
50
40
30
20
10
0
0
1
2
3
4
VCE (V)
5
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
6
7
8
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
4
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© 2015 International Rectifier
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80µs
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January 20, 2015
IRGS/SL/B/P4640D/EPbF
90
80
70
60
ICE (A)
120
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
100
80
IF (A)
50
40
30
20
10
0
0
1
2
3
4
VCE (V)
5
6
7
8
60
40
20
0
0.0
-40°c
25°C
175°C
1.0
VF (V)
2.0
3.0
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80µs
20
18
16
14
VCE (V)
VCE (V)
Fig. 8
- Typ. Diode Forward Voltage Drop
Characteristics
20
18
16
14
12
10
8
6
4
2
0
5
10
VGE (V)
ICE = 12A
ICE = 24A
ICE = 48A
12
10
8
6
4
2
0
ICE = 12A
ICE = 24A
ICE = 48A
15
20
5
10
VGE (V)
15
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
20
18
16
14
VCE (V)
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
120
100
80
ICE (A)
12
10
8
6
4
2
0
5
10
VGE (V)
ICE = 12A
ICE = 24A
ICE = 48A
T J = 25°C
T J = 175°C
60
40
20
0
0
5
VGE (V)
10
15
15
20
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 175°C
5
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© 2015 International Rectifier
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
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January 20, 2015
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