VS-HFA90NH40PbF
www.vishay.com
Vishay Semiconductors
HEXFRED
®
Ultrafast Soft Recovery Diode, 210 A
FEATURES
Lug terminal
anode
• Very low Q
rr
and t
rr
• Designed and qualified for industrial level
• UL approved file E222165
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
HALF-PAK (D-67)
Base
cathode
BENEFITS
• Reduced RFI and EMI
• Reduced snubbing
PRIMARY CHARACTERISTICS
I
F
(maximum)
V
R
I
F(DC)
at T
C
Package
Circuit configuration
210 A
400 V
106 A at 100 °C
HALF-PAK (D-67)
Single diode
DESCRIPTION
HEXFRED
®
diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for
different values of current, temperature and dI
F
/dt simplifies
the calculations of losses in the operating conditions. The
softness of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
power converters, motors drives and other applications
where switching losses are significant portion of the total
losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Non-repetitive avalanche energy
Maximum power dissipation
Operating junction and storage
temperature range
SYMBOL
V
R
I
F
I
FSM
E
AS
P
D
T
J
, T
Stg
T
C
= 25 °C
T
C
= 100 °C
Limited by junction temperature
L = 100 μH, duty cycle limited by maximum T
J
T
C
= 25 °C
T
C
= 100 °C
TEST CONDITIONS
VALUES
400
210
106
600
1.4
329
132
-55 to +150
mJ
W
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Cathode to anode breakdown
voltage
Maximum forward voltage
Maximum reverse leakage current
Junction capacitance
Series inductance
SYMBOL
V
BR
I
R
= 100 μA
I
F
= 90 A
V
FM
I
RM
C
T
L
S
I
F
= 180 A
I
F
= 90 A, T
J
= 125 °C
T
J
= 125 °C, V
R
= 400 V
V
R
= 200 V
See fig. 2
See fig. 3
See fig. 1
TEST CONDITIONS
MIN.
400
-
-
-
-
-
-
TYP.
-
1.06
1.2
0.96
0.6
180
7.0
MAX.
-
1.45
1.67
1.23
2
260
-
mA
pF
nH
V
UNITS
From top of terminal hole to mounting plane
Revision: 11-Jan-18
Document Number: 94044
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA90NH40PbF
www.vishay.com
Vishay Semiconductors
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 90 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
-
TYP.
90
158
9
15
420
1200
370
270
MAX.
140
240
17
30
1100
3200
-
-
UNITS
ns
A
nC
A/μs
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
See fig. 5
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of recovery current
See fig. 8
SYMBOL
t
rr
I
RRM
Q
rr
dI
(rec)M
/dt
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
Terminal torque
Case style
minimum
maximum
minimum
maximum
HALF-PAK (D-67)
Non-lubricated threads
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
See fig. 4
Mounting surface, flat, smooth, and greased
TEST CONDITIONS
VALUES
-55 to 150
0.38
°C/W
0.05
30
1.06
3 (26.5)
4 (35.4)
3.4 (30)
5 (44.2)
N
m
(lbf
in)
g
oz.
UNITS
°C
I
F
- Instantaneous Forward Current (A)
1000
10 000
T
J
= 150 °C
I
R
- Reverse Current (µA)
1000
100
10
1
0.1
0.01
T
J
= 25 °C
0.001
0.0001
T
J
= 125 °C
100
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
100
94044_02
200
300
400
94044_01
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
Revision: 11-Jan-18
Document Number: 94044
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA90NH40PbF
www.vishay.com
Vishay Semiconductors
100
200 A, 125 °C
90 A, 125 °C
40 A, 125 °C
10 000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
I
rrm
(A)
1000
10
200 A, 25 °C
90 A, 25 °C
40 A, 25 °C
100
1
94044_03
10
100
1000
1
100
94044_06
1000
V
R
- Reverse Voltage (V)
dI
F
/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dI
F
/dt
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Maximum Allowable Case Temperature (°C)
160
140
120
4500
4000
3500
3000
DC
200 A, 125 °C
90 A, 125 °C
40 A, 125 °C
200 A, 25 °C
90 A, 25 °C
40 A, 25 °C
Q
rr
(nC)
100
80
60
40
20
0
0
94044_04
2500
2000
1500
1000
500
50
100
150
200
250
0
100
94044_07
1000
I
F (AV)
- DC Forward Current (A)
dI
F
/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
Fig. 4 - Maximum Allowable Case Temperature vs.
DC Forward Current
240
200 A, 125 °C
90 A, 125 °C
40 A, 125 °C
200 A, 25 °C
90 A, 25 °C
40 A, 25 °C
10 000
200
dI
(rec)M
/dt (A/µs)
t
rr
(ns)
160
1000
120
200 A, 125 °C
90 A, 125 °C
40 A, 125 °C
200 A, 25 °C
90 A, 25 °C
40 A, 25 °C
80
40
100
94044_05
1000
100
100
94044_08
1000
dI
F
/dt (A/µs)
dI
F
/dt (A/µs)
Fig. 8 - Typical dI
(rec)M
/dt vs. dI
F
/dt
Fig. 5 - Typical Reverse Recovery Time vs. dI
F
/dt
Revision: 11-Jan-18
Document Number: 94044
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA90NH40PbF
www.vishay.com
1
Vishay Semiconductors
Z
thJC
- Thermal Response
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.01
Single pulse
(thermal response)
0.001
0.00001
94044_09
0.0001
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
Fig. 9 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
di
(rec)M
/dt
(5)
0.75 I
RRM
(1)
di
F
/dt
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 11 - Reverse Recovery Waveform and Definitions
Revision: 11-Jan-18
Document Number: 94044
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA90NH40PbF
www.vishay.com
Vishay Semiconductors
I
L(PK)
High-speed
switch
L = 100 µH
D.U.T.
R
g
= 25
Ω
Current
monitor
Freewheel
diode
+
V
d
= 50 V
V
(AVAL)
V
R(RATED)
Decay
time
Fig. 12 - Avalanche Test Circuit and Waveforms
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
7
-
-
-
-
-
-
-
HFA
2
90
3
N
4
H
5
40
6
PbF
7
Vishay Semiconductors product
HEXFRED
®
family
Average current rating
N = not isolated
H = HALF-PAK (D-67)
Voltage rating (400 V)
Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95020
Revision: 11-Jan-18
Document Number: 94044
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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