StrongIRFET™
IRFS7430-7PPbF
Application
Brushed Motor drive applications
BLDC Motor drive applications
PWM Inverterized topologies
Battery powered circuits
Half-bridge and full-bridge topologies
Electronic ballast applications
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
G
Gate
D
Drain
S
Source
HEXFET
®
Power MOSFET
D
V
DSS
R
DS(on) typ.
40V
0.55m
0.75m
522A
240A
G
S
max
I
D (Silicon Limited)
I
D (Package Limited)
Base part number
IRFS7430-7PPbF
Package Type
D
2
Pak-7Pin
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
600
500
Orderable Part Number
IRFS7430-7PPbF
IRFS7430TRL7PP
)
RDS(on), Drain-to -Source On Resistance (m
4.0
ID = 100A
3.0
ID, Drain Current (A)
Limited By Package
400
300
200
100
2.0
TJ = 125°C
1.0
0.0
4
6
8
10
12
TJ = 25°C
14
16
18
20
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
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Absolute Maximium Rating
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
IRFS7430-7PPbF
Max.
522
369
240
1200*
375
2.5
± 20
-55 to + 175
300
764
1454
See Fig 15, 16, 23a, 23b
Units
A
W
W/°C
V
°C
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
Junction-to-Case
R
JC
Junction-to-Ambient
R
JA
mJ
A
mJ
Units
°C/W
Typ.
–––
–––
Max.
0.4
40
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min.
40
–––
–––
–––
2.2
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= 250µA
26
––– mV/°C Reference to 25°C, I
D
= 2mA
0.55 0.75
V
GS
= 10V, I
D
= 100A
m
0.93 –––
V
GS
= 6V, I
D
= 50A
3.0
3.9
V
V
DS
= V
GS
, I
D
= 250µA
–––
1.0
V
DS
=40 V, V
GS
= 0V
µA
––– 150
V
DS
=40V,V
GS
= 0V,T
J
=125°C
––– 100
V
GS
= 20V
nA
––– -100
V
GS
= -20V
2.2
–––
Notes:
Calculated
continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A
by source bonding technology. Note that current limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive
rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 153µH, R
G
= 50, I
AS
= 100A, V
GS
=10V.
I
SD
100A, di/dt
1403A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse
width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50, I
AS
= 54A, V
GS
=10V.
When mounted on 1" square PCB (FR-4 or G-10 Material).
Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
*Pulse drain current is limited at 960A by source bonding technology.
2
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IRFS7430-7PPbF
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Relat-
ed)
Output Capacitance (Time Related)
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Min.
176
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
305
84
96
209
28
79
161
Max. Units
Conditions
–––
S V
DS
= 10V, I
D
=100A
460
I
D
= 100A
–––
V
DS
= 20V
nC
–––
V
GS
= 10V
–––
–––
V
DD
= 20V
I
D
= 30A
–––
ns
–––
R
G
= 2.7
V
GS
= 10V
–––
–––
–––
–––
–––
–––
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig.7
pF
V
GS
= 0V, VDS = 0V to 32V
See Fig.11
V
GS
= 0V, VDS = 0V to 32V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
–––
93
––– 13975
––– 2140
––– 1438
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
2620
3306
Typ.
–––
–––
0.8
1.6
50
58
59
72
2.2
Diode Characteristics
Max. Units
522
A
1200*
1.2
–––
–––
–––
–––
–––
–––
V
D
G
S
T
J
= 25°C,I
S
= 100A,V
GS
= 0V
V/ns T
J
= 175°C,I
S
=100A,V
DS
= 40V
T
J
= 25°C
V
DD
= 34V
ns
T
J
= 125°C
I
F
= 100A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
3
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November 6, 2014
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
IRFS7430-7PPbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
10
4.5V
1
100
4.5V
60µs
PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
10
0.1
1
60µs
PULSE WIDTH
Tj = 175°C
10
100
VDS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
Fig 4.
Typical Output Characteristics
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current(A)
100
TJ = 175°C
ID = 100A
VGS = 10V
1.6
10
TJ = 25°C
1.2
1
VDS = 10V
0.1
2
3
4
5
6
7
8
60µs
PULSE WIDTH
0.8
0.4
-60
-20
20
60
100
140
180
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
1000000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 6.
Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID = 100A
VDS = 32V
VDS = 20V
100000
C, Capacitance (pF)
10000
Ciss
Coss
Crss
1000
100
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
0
50
100 150 200 250 300 350 400
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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© 2014 International Rectifier
Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
Submit Datasheet Feedback
November 6, 2014
1000
IRFS7430-7PPbF
10000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
ISD, Reverse Drain Current (A)
100
TJ = 175°C
1000
100µsec
100
Limited by Package
10
TJ = 25°C
1msec
DC
10msec
10
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-to-Drain Voltage (V)
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
0.1
VDS , Drain-to-Source Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Fig 10.
Maximum Safe Operating Area
2.5
48
Id = 2.0mA
47
46
45
44
43
42
41
40
-60
-20
20
60
100
140
180
TJ , Temperature ( °C )
2.0
Energy (µJ)
1.5
1.0
0.5
0.0
-5
0
5
10 15 20 25 30 35 40 45
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to–Source Breakdown Voltage
m
RDS (on), Drain-to -Source On Resistance (
)
10.0
Fig 12.
Typical C
oss
Stored Energy
8.0
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
6.0
4.0
2.0
0.0
0
100
200
300
400
500
ID, Drain Current (A)
Fig 13.
Typical On-Resistance vs. Drain Current
5
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November 6, 2014
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