NCV8401, NCV8401A
Self-Protected Low Side
Driver with Temperature
and Current Limit
NCV8401/A is a three terminal protected Low-Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain-to-Gate clamping for overvoltage protection.
This device offers protection and is suitable for harsh automotive
environments.
Features
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V
DSS
(Clamped)
42 V
I
D
MAX
(Limited)
33 A*
R
DS(ON)
TYP
23 mW @ 10 V
•
•
•
•
•
•
•
•
Short Circuit Protection
Thermal Shutdown with Automatic Restart
Over Voltage Protection
Integrated Clamp for Inductive Switching
ESD Protection
dV/dt Robustness
Analog Drive Capability (Logic Level Input)
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
Typical Applications
*Max current may be limited below this value
depending on input conditions.
Drain
Overvoltage
Protection
Gate
Input
ESD Protection
Temperature
Limit
Current
Limit
Current
Sense
•
Switch a Variety of Resistive, Inductive and Capacitive Loads
•
Can Replace Electromechanical Relays and Discrete Circuits
•
Automotive / Industrial
DPAK
CASE 369C
STYLE 2
Y
WW
xxxxx
G
= Year
= Work Week
= 8401 or 8401A
= Pb−Free Package
1
2
3
Source
MARKING
DIAGRAM
YWW
NCV
xxxxxG
1 = Gate
2 = Drain
3 = Source
ORDERING INFORMATION
Device
NCV8401DTRKG
NCV8401ADTRKG
Package
DPAK
(Pb−Free)
DPAK
(Pb−Free)
Shipping
†
2500/Tape & Reel
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2012
July, 2012
−
Rev. 10
1
Publication Order Number:
NCV8401/D
NCV8401, NCV8401A
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage Internally Clamped
Drain−to−Gate Voltage Internally Clamped
(R
GS
= 1.0 MW)
Gate−to−Source Voltage
Drain Current
−
Continuous
Total Power Dissipation
@ T
A
= 25°C (Note 1)
@ T
A
= 25°C (Note 2)
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Symbol
V
DSS
V
DGR
V
GS
I
D
P
D
Value
42
42
"14
Unit
V
V
V
W
Internally Limited
1.1
2.0
1.6
110
60
800
65
−40
to 150
−55
to 150
R
qJC
R
qJA
R
qJA
E
AS
V
LD
T
J
T
stg
°C/W
Single Pulse Drain−to−Source Avalanche Energy
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc, I
L
= 3.65 Apk, L = 120 mH, R
G
= 25
W,
T
Jstart
= 150°C) (Note 3)
Load Dump Voltage (V
GS
= 0 and 10 V, R
I
= 2.0
W,
R
L
= 3.0
W,
t
d
= 400 ms)
Operating Junction Temperature
Storage Temperature
mJ
V
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Minimum FR4 PCB, steady state.
2. Mounted onto a 2″ square FR4 board
(1″ square, 2 oz. Cu 0.06″ thick single−sided, t = steady state).
3. Not subject to production testing.
+
I
D
DRAIN
I
G
+
GATE
VDS
VGS
SOURCE
−
−
Figure 1. Voltage and Current Convention
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2
NCV8401, NCV8401A
MOSFET ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Clamped Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250
mAdc)
(V
GS
= 0 Vdc, I
D
= 250
mAdc,
T
J
= 150°C) (Note 4)
Zero Gate Voltage Drain Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
(V
DS
= 32 Vdc, V
GS
= 0 Vdc, T
J
= 150°C) (Note 4)
Gate Input Current
(V
GS
= 5.0 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.2 mAdc)
Threshold Temperature Coefficient
Static Drain−to−Source On−Resistance (Note 5)
(V
GS
= 10 Vdc, I
D
= 5.0 Adc, T
J
@ 25°C)
(V
GS
= 10 Vdc, I
D
= 5.0 Adc, T
J
@ 150°C) (Note 4)
Static Drain−to−Source On−Resistance (Note 5)
(V
GS
= 5.0 Vdc, I
D
= 5.0 Adc, T
J
@ 25°C)
(V
GS
= 5.0 Vdc, I
D
= 5.0 Adc, T
J
@ 150°C) (Note 4)
Source−Drain Forward On Voltage
(I
S
= 5 A, V
GS
= 0 V)
SWITCHING CHARACTERISTICS
(Note 4)
Turn−ON Time (10% V
IN
to 90% I
D
)
Turn−OFF Time (90% V
IN
to 10% I
D
)
Turn−ON Time (10% V
IN
to 90% I
D
)
Turn−OFF Time (90% V
IN
to 10% I
D
)
Slew−Rate ON (80% V
DS
to 50% V
DS
)
Slew−Rate OFF (50% V
DS
to 80% V
DS
)
Current Limit
V
IN
= 0 V to 5 V, V
DD
= 25 V
I
D
= 1.0 A, Ext R
G
= 2.5
W
V
IN
= 0 V to 10 V, V
DD
= 25 V
,
I
D
= 1.0 A, Ext R
G
= 2.5
W
V
in
= 0 to 10 V, V
DD
= 12 V,
R
L
= 4.7
W
t
ON
t
OFF
t
ON
t
OFF
−dV
DS
/dt
ON
dV
DS
/dt
OFF
I
LIM
25
11
30
18
T
LIM(off)
DT
LIM(on)
T
LIM(off)
DT
LIM(on)
I
GON
I
GCL
I
GTL
150
150
41
129
16
164
1.27
0.36
30
16
35
25
175
15
165
15
50
400
0.1
0.7
0.6
2.0
ESD
100
700
0.5
1.0
1.0
4.0
V
mA
mA
185
50
150
25
180
2.0
0.75
35
21
40
28
200
°C
°C
°C
°C
mA
Adc
V/ms
ms
V
GS(th)
1.0
1.8
5.0
23
43
28
50
0.80
2.0
Vdc
−mV/°C
mW
V
(BR)DSS
42
42
46
44
1.5
6.5
50
50
50
5.0
100
Vdc
mAdc
Symbol
Min
Typ
Max
Unit
I
DSS
I
GSSF
mAdc
R
DS(on)
29
55
34
60
1.1
R
DS(on)
mW
V
SD
V
SELF PROTECTION CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
V
GS
= 5.0 V, V
DS
= 10 V
V
GS
= 5.0 V, T
J
= 150°C (Note 4)
V
GS
= 10 V, V
DS
= 10 V
V
GS
= 10 V, T
J
= 150°C (Note 4)
Temperature Limit (Turn−off)
Thermal Hysteresis
Temperature Limit (Turn−off)
Thermal Hysteresis
GATE INPUT CHARACTERISTICS
(Note 4)
Device ON Gate Input Current
Current Limit Gate Input Current
Thermal Limit Fault Gate Input Current
V
GS
= 5 V I
D
= 1.0 A
V
GS
= 10 V I
D
= 1.0 A
V
GS
= 5 V, V
DS
= 10 V
V
GS
= 10 V, V
DS
= 10 V
V
GS
= 5 V, V
DS
= 10 V
V
GS
= 10 V, V
DS
= 10 V
ESD ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted) (Note 4)
Electro−Static Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
4. Not subject to production testing.
5. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
4000
400
V
GS
= 5.0 V (Note 4)
V
GS
= 5.0 V
V
GS
= 10 V (Note 4)
V
GS
= 10 V
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3
NCV8401, NCV8401A
TYPICAL PERFORMANCE CURVES
100
10,000
10
T
Jstart
= 25°C
T
Jstart
= 150°C
E
max
(mJ)
I
L(max)
(A)
1,000
T
Jstart
= 25°C
T
Jstart
= 150°C
1
10
L (mH)
100
100
10
L (mH)
100
Figure 2. Single Pulse Maximum Switch−off
Current vs. Load Inductance
100
10,000
Figure 3. Single Pulse Maximum Switching
Energy vs. Load Inductance
T
Jstart
= 25°C
E
max
(mJ)
I
L(max)
(A)
10
T
Jstart
= 150°C
1,000
T
Jstart
= 25°C
T
Jstart
= 150°C
1
1
Time in Clamp (ms)
10
100
1
Time in Clamp (ms)
100
Figure 4. Single Pulse Maximum Inductive
Switch−off Current vs. Time in Clamp
45
40
35
30
I
D
(A)
25
20
15
10
5
0
0
1
2
V
DS
(V)
3
3V
V
GS
= 2.5 V
4
5
6V
7V
8V
9V
10 V
5V
4V
30
Figure 5. Single Pulse Maximum Inductive
Switching Energy vs. Time in Clamp
−40°C
25
25°C
20
I
D
(A)
15
10
5
0
100°C
150°C
1.0
1.5
2.0
2.5
V
GS
(V)
3.0
3.5
4.0
Figure 6. On−state Output Characteristics
at 255C
Figure 7. Transfer Characteristics (V
DS
= 10 V)
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4
NCV8401, NCV8401A
TYPICAL PERFORMANCE CURVES
80
70
60
R
DS(on)
(mW)
R
DS(on)
(mW)
50
40
30
20
10
−40°C
3
4
5
6
7
8
9
10
V
GS
(V)
100°C
I
D
= 3 A
150°C
45
40
35
30
25
20
15
10
1
25°C, V
GS
= 5 V
25°C, V
GS
= 10 V
−40°C,
V
GS
= 5 V
3
5
I
D
(A)
−40°C,
V
GS
= 10 V
7
9
150°C, V
GS
= 5 V
150°C, V
GS
= 10 V
100°C, V
GS
= 5 V
100°C, V
GS
= 10 V
25°C
Figure 8. R
DS(on)
vs. Gate−Source Voltage
2.00
1.75
NORMALIZED R
DS(on)
1.50
I
LIM
(A)
1.25
1.00
0.75
0.50
−40 −20
V
GS
= 10 V
0
20
40
60
T (°C)
80
100
120
140
V
GS
= 5 V
45
40
35
Figure 9. R
DS(on)
vs. Drain Current
−40°C
25°C
30
25
20
15
100°C
150°C
5
6
7
V
GS
(V)
8
9
10
Figure 10. Normalized R
DS(on)
vs. Temperature
(I
D
= 5 A)
45
40
35
I
LIM
(A)
30
V
GS
= 5 V
25
20
15
−40 −20
V
GS
= 10 V
1
I
DSS
(mA)
0.1
0.01
0.001
0
20
40
60
80
100
120
140
0.0001
100
10
Figure 11. Current Limit vs. Gate−Source
Voltage (V
DS
= 10 V)
150°C
100°C
25°C
−40°C
10
15
20
25
V
DS
(V)
30
35
40
T
J
(°C)
Figure 12. Current Limit vs. Junction
Temperature (V
DS
= 10 V)
Figure 13. Drain−to−Source Leakage Current
(V
GS
= 0 V)
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