VS-ST303C Series
www.vishay.com
Vishay Semiconductors
Inverter Grade Thyristors
(PUK Version), 620 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• International standard case E-PUK (TO-200AB)
E-PUK (TO-200AB)
• High surge current capability
• Low thermal impedance
• High speed performance
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
Package
Circuit configuration
I
T(AV)
V
DRM
/V
RRM
V
TM
I
TSM
at 50 Hz
I
TSM
at 60 Hz
I
GT
T
C
/T
hs
E-PUK (TO-200AB)
Single SCR
620 A
400 V, 800 V, 1000 V, 1200 V
2.16 V
7950 A
8320 A
200 mA
55 °C
TYPICAL APPLICATIONS
• Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
Note
• t
q
= 10 μs to 20 μs for 400 V to 800 V devices
t
q
= 15 μs to 30 μs for 1000 V to 1200 V devices
Range
T
hs
T
hs
50 Hz
60 Hz
50 Hz
60 Hz
TEST CONDITIONS
VALUES
620
55
1180
25
7950
8320
316
289
400 to 1200
10 to 30
-40 to 125
UNITS
A
°C
A
°C
A
kA
2
s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
VS-ST303C..C
08
10
12
V
DRM
/V
RRM
, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
400
800
1000
1200
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
500
900
1100
1300
50
I
DRM
/I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Revision: 28-Aug-17
Document Number: 94373
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST303C Series
www.vishay.com
Vishay Semiconductors
CURRENT CARRYING CAPABILITY
I
TM
180° el
180° el
I
TM
100
µs
I
TM
FREQUENCY
UNITS
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage V
r
Voltage before turn-on V
d
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
1314
1260
900
340
50
V
DRM
50
40
10/0.47
1130
1040
700
230
2070
2190
1900
910
50
V
DRM
-
1940
1880
1590
710
6930
3440
1850
740
50
V
DRM
-
6270
2960
1540
560
V
A/µs
55
10/0.47
°C
/µF
A
55
40
10/0.47
55
40
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope
resistance
Maximum holding current
Typical latching current
I
2
t
V
TM
V
T(TO)1
V
T(TO)2
r
t1
r
t2
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
620 (230)
55 (85)
1180
7950
8320
6690
Sinusoidal half wave,
initial T
J
= T
J
maximum
7000
316
289
224
204
3160
2.16
1.44
1.48
0.57
0.56
600
1000
m
V
klA
2
s
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
I
TM
= 1255 A, T
J
= T
J
maximum,
t
p
= 10 ms sine wave pulse
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
T
J
= 25 °C, I
T
> 30 A
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
,
I
G
= 1 A
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned on current
Typical delay time
minimum
Maximum turn-off
time
(1)
maximum
t
q
SYMBOL
dI/dt
t
d
TEST CONDITIONS
T
J
= T
J
maximum, V
DRM
= Rated V
DRM
I
TM
= 2 x dI/dt
T
J
= 25 °C, V
DM
= Rated V
DRM
, I
TM
= 50 A DC, t
p
= 1 μs
Resistive load, gate pulse: 10 V, 5
source
T
J
= T
J
maximum,
I
TM
= 550 A, commutating dI/dt = 40 A/μs
V
R
= 50 V, t
p
= 500 μs, dV/dt: see table in device code
VALUES
1000
0.83
10
30
μs
UNITS
A/μs
Note
(1)
t = 10 μs to 20 μs for 400 V to 800 V devices; t = 15 μs to 30 μs for 1000 V to 1200 V devices
q
q
Revision: 28-Aug-17
Document Number: 94373
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST303C Series
www.vishay.com
Vishay Semiconductors
SYMBOL
dV/dt
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum, linear to 80 % V
DRM
,
higher value available on request
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
50
UNITS
V/µs
mA
BLOCKING
PARAMETER
Maximum critical rate of rise of off-state voltage
Maximum peak reverse and off-state leakage current
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
+ V
GM
- V
GM
I
GT
V
GT
I
GD
V
GD
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
T
J
= T
J
maximum, t
p
5 ms
TEST CONDITIONS
T
J
= T
J
maximum, f = 50 Hz, d% = 50
VALUES
60
10
10
20
5
200
3
20
0.25
UNITS
W
A
V
mA
V
mA
V
T
J
= T
J
maximum, rated V
DRM
applied
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
Maximum thermal resistance, case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
SYMBOL
T
J
T
Stg
R
thJ-hs
R
thC-hs
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
TEST CONDITIONS
VALUES
-40 to 125
-40 to 150
0.09
0.04
0.020
0.010
9800
(1000)
83
N
(kg)
g
K/W
UNITS
°C
E-PUK (TO-200AB)
R
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
0.010
0.012
0.015
0.022
0.036
DOUBLE SIDE
0.010
0.012
0.015
0.022
0.036
RECTANGULAR CONDUCTION
SINGLE SIDE
0.007
0.012
0.016
0.023
0.036
DOUBLE SIDE
0.007
0.013
0.017
0.023
0.037
T
J
= T
J
max.
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Revision: 28-Aug-17
Document Number: 94373
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST303C Series
www.vishay.com
Vishay Semiconductors
130
Maximum Allowable
Heatsink Temperature (°C)
120
110
100
90
80
70
60
50
40
0
50
100
150
30°
Maximum Allowable
Heatsink Temperature (°C)
ST303C..C Series
(Single side cooled)
R
thJ-hs
(DC) = 0.09 K/W
130
120
110
100
90
80
70
60
50
40
30
30°
0
200
60°
400
90° 120°
600
800
1000
1200
180°
DC
Ø
ST303C..C Series
(Double side cooled)
R
thJ-hs
(DC) = 0.04 K/W
Ø
Conduction angle
Conduction period
180°
60°
200
90°
120°
250
300
350
400
20
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
Average On-State Current (A)
Fig. 4 - Current Ratings Characteristics
130
120
Maximum Allowable
Heatsink Temperature (°C)
100
90
80
70
60
50
40
30
20
0
100
200
300
400
500
600
700
30°
60°
DC
180°
120°
Ø
Maximum Average On-State
Power Loss (W)
110
ST303C..C Series
(Single side cooled)
R
thJ-hs
(DC) = 0.09 K/W
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
100
200
300
400
500
600
700
800
ST303C..C Series
T
J
= 125 °C
Ø
180°
120°
90°
60°
30°
RMS limit
Conduction period
90°
Conduction angle
Average On-State Current (A)
Fig. 2 - Current Ratings Characteristics
Average On-State Current (A)
Fig. 5 - On-State Power Loss Characteristics
130
120
Maximum Average On-State
Power Loss (W)
Maximum Allowable
Heatsink Temperature (°C)
110
100
90
80
70
60
50
40
30
20
0
100
200
300
30°
ST303C..C Series
(Double side cooled)
R
thJ-hs
(DC) = 0.04 K/W
2800
2400
2000
1600
1200
800
400
0
0
200
400
600
800
1000
1200
DC
180°
120°
90°
60°
30°
RMS limit
Ø
Ø
Conduction angle
180°
60°
400
Conduction period
ST303C..C Series
T
J
= 125 °C
90°
500
120°
600
700
800
Average On-State Current (A)
Fig. 3 - Current Ratings Characteristics
Average On-State Current (A)
Fig. 6 - On-State Power Loss Characteristics
Revision: 28-Aug-17
Document Number: 94373
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST303C Series
www.vishay.com
Vishay Semiconductors
1
7500
7000
Peak Half Sine Wave
On-State Current (A)
6500
6000
5500
5000
4500
4000
3500
3000
1
10
ST303C..C Series
Initial T
J
= 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Z
thJ-hs
- Transient Thermal
Impedance (K/W)
At any rated load condition and
with
rated
V
RRM
applied following surge
ST303C..C Series
0.1
0.01
Steady state value
R
thJ-hs
= 0.09 K/W
(Single side cooled)
R
thJ-hs
= 0.04 K/W
(Double side cooled)
(DC operation)
0.01
0.1
1
10
0.001
0.001
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Q
rr
- Maximum Reverse Recovery Charge (µC)
8000
7500
Maximum non-repetitive surge current
versus
pulse train duration. Control of
conduction may not be maintained
Initial T
J
= 125 °C
No
voltage
reapplied
Rated
V
RRM
reapplied
320
300
280
260
240
220
200
180
160
140
120
100
80
10
20
30
40
50
60
70
80
90
100
ST303C..C Series
T
J
= 125 °C
I
TM
= 500 A
I
TM
= 300 A
I
TM
= 200 A
I
TM
= 100 A
I
TM
= 50 A
Peak Half Sine Wave
On-State Current (A)
7000
6500
6000
5500
5000
4500
4000
3500
3000
0.01
ST303C..C Series
0.1
1
Pulse Train Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
dI/dt - Rate of Fall of On-State Current (A/µs)
Fig. 11 - Reverse Recovered Charge Characteristics
Instantaneous On-State Current (A)
10 000
I
rr
- Maximum Reverse Recovery Current (A)
180
160
140
120
100
80
60
40
20
10
20
1000
I
TM
= 500 A
I
TM
= 300 A
I
TM
= 200 A
I
TM
= 100 A
I
TM
= 50 A
T
J
= 25 °C
T
J
= 125 °C
ST303C..C Series
100
0
1
2
3
4
5
6
7
8
ST303C..C Series
T
J
= 125 °C
Instantaneous On-State Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
30
40
50
60
70
80
90
100
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Reverse Recovered Current Characteristics
Revision: 28-Aug-17
Document Number: 94373
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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