process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 20V).
Features
•
–3.0 A, –60 V.
R
DS(ON)
= 150 mΩ @ V
GS
= –10 V
R
DS(ON)
= 240 mΩ @ V
GS
= –4.5 V
•
Low gate charge
•
Fast switching speed
•
High performance trench technology for extremely
low R
DS(ON)
•
High power and current handling capability
Applications
•
Power management
•
Load switch
•
Battery protection
D
D
D
D
SO-8
D
D
D
D
5
6
7
4
3
2
1
Pin 1
SO-8
G
S
G
S
S
S
S
S
T
A
=25
o
C unless otherwise noted
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Maximum Power Dissipation
Parameter
Ratings
–60
±20
(Note 1a)
Units
V
V
A
W
–3.0
–12
2.5
1.2
1.0
–55 to +175
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
50
125
25
°C/W
Package Marking and Ordering Information
Device Marking
NDS9407
2002
Fairchild Semiconductor Corporation
Device
NDS9407
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
NDS9407 Rev B1(W)
NDS9407
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
I
D
= –250
µA
V
GS
= 0 V,
I
D
= –250
µA,
Referenced to 25°C
V
GS
= 0 V
V
DS
= –48 V,
V
DS
= –48 V, V
GS
= 0V, T
J
= 55°C
V
GS
= 20 V,
V
DS
= 0 V
V
GS
= –20 V,
V
DS
= 0 V
I
D
= –250
µA
V
DS
= V
GS
,
I
D
= –250
µA,
Referenced to 25°C
V
GS
= –10 V,
I
D
= –3.0 A
V
GS
= –4.5 V, I
D
= –1.6 A
V
GS
= –10 V, I
D
= –3.0 A, T
J
=125°C
V
GS
= –10 V,
V
DS
= –15 V,
V
DS
= –5 V
I
D
= –3.0 A
Min Typ
–60
–45
Max
Units
V
mV/°C
Off Characteristics
–1
–10
100
–100
µA
nA
nA
On Characteristics
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
–1
–1.6
4
78
99
122
–3
V
mV/°C
150
240
250
mΩ
I
D(on)
g
FS
–12
8
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= –30 V,
f = 1.0 MHz
V
GS
= 0 V,
732
86
38
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
V
DD
= –30 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
Ω
8
11
10
10
16
20
20
20
ns
ns
ns
ns
nS
nC
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
I
F
= –3.0 A,
d
iF
/d
t
= 100 A/µs
V
DS
= –30 V,
V
GS
= –10 V
I
D
= –3.0 A,
24
66
16
2.2
3.3
22
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V, I
S
= –2.1 A
Voltage
–2.1
(Note 2)
A
V
–0.8
–1.2
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
