Operating Temperature Range .......................... -40NC to +85NC
Storage Temperature Range............................ -65NC to +150NC
Lead Temperature (TDFN only, soldering, 10s) .............+300NC
Soldering Temperature (reflow) ......................................+260NC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-
tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
TDFN
Junction-to-Ambient Thermal Resistance (B
JA
)............ 162NC/W
Junction-to-Case Thermal Resistance (B
JC
).................. 20NC/W
WLP
Junction-to-Ambient Thermal Resistance (B
JA
)............. 85NC/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
ELECTRICAL CHARACTERISTICS
(V
CC
= +1.65V to +5.5V, V
L
= +0.9V to min(V
CC
+ 0.3V, +3.6V), T
A
= -40NC to +85NC, unless otherwise noted. Typical values are at
V
CC
= +3V, V
L
= +1.2V, and T
A
= +25NC.) (Notes 2, 3)
PARAMETER
POWER SUPPLY
Power Supply Range
V
CC
Supply Current
V
L
Supply Current
V
CC
Shutdown Supply Current
V
L
Shutdown Supply Current
IOVCC_, IOVL_ Three-State
Leakage Current
TS
Input Leakage Current
V
CC
Shutdown Threshold
V
L
Shutdown Threshold
V
L
Above V
CC
Shutdown
Threshold
IOVL_ Pullup Resistor
IOVCC_ Pullup Resistor
IOVL_ to IOVCC_ DC
Resistance
Maxim Integrated
SYMBOL
V
L
V
CC
I
CC
I
L
I
CC-SHDN
I
L-SHDN
I
LEAK
I
LEAK_TS
V
TH_VCC
V
TH_VL
CONDITIONS
MIN
0.9
1.65
TYP
MAX
5.5
5.5
UNITS
V
FA
FA
FA
FA
FA
FA
V
V
V
kI
kI
I
2
IOVCC_ = V
CC
, IOVL_ = V
L
,
TS
= V
CC
IOVCC_ = V
CC
, IOVL_ = V
L
,
TS
= V
CC
TS
= GND
TS
= V
CC
, V
L
= GND, IOVCC_ = unconnected
TS
= GND
TS
= V
L
, V
CC
= GND, IOVL_ = unconnected
T
A
= +25NC,
TS
= GND
T
A
= +25NC
TS
= V
L
, V
CC
falling, V
L
= 0.9V
TS
= V
CC
, V
L
falling
0.15
0.4
3
3
23
0.5
1
1
0.1
0.1
0.1
47
6
2.2
2.2
1
1
1
1
0.8
0.3
0.73
7.6
7.6
6
1.35
0.8
1.1
12
12
17
V
TH_VL-VCC
V
L
rising above V
CC
, V
CC
= +1.65V
R
VL_PU
R
VCC_PU
Inferred from V
OHL
Measurements
Inferred from V
OHC
Measurements
R
IOVL-IOVCC
Inferred from V
OHx
Measurements
MAX14591
High-Speed, Open-Drain Capable
Logic-Level Translator
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= +1.65V to +5.5V, V
L
= +0.9V to min(V
CC
+ 0.3V, +3.6V), T
A
= -40NC to +85NC, unless otherwise noted. Typical values are at
V
CC
= +3V, V
L
= +1.2V, and T
A
= +25NC.) (Notes 2, 3)
PARAMETER
LOGIC LEVELS
IOVL_ Input-Voltage High
IOVL_ Input-Voltage Low
IOVCC_ Input-Voltage High
IOVCC_ Input-Voltage Low
TS
Input-Voltage High
TS
Input-Voltage Low
IOVL_ Output-Voltage High
IOVL_ Output-Voltage Low
IOVCC_ Output-Voltage High
IOVCC_ Output-Voltage Low
Accelerator Pulse Duration
IOVL_ Output Accelerator
Source Impedance
IOVCC_ Output Accelerator
Source Impedance
THERMAL PROTECTION
Thermal Shutdown
Thermal Hysteresis
ESD PROTECTION
All Pins
HBM
±2
kV
T
SHDN
T
HYST
+150
10
NC
NC
V
IHL
V
ILL
V
IHC
V
ILC
V
IH
V
IL
V
OHL
V
OLL
V
OHC
V
OLC
IOVL_ rising, V
L
= +0.9V,
V
CC
= +1.65V (Note 4)
IOVL_ falling, V
L
= +0.9V,
V
CC
= +1.65V (Note 4)
IOVCC_ rising, V
L
= +0.9V,
V
CC
= +1.65V (Note 4)
IOVCC_ falling, V
L
= +0.9V,
V
CC
= +1.65V (Note 4)
TS
rising, V
L
= +0.9V or +3.6V, V
CC
> V
L
TS
falling, V
L
= +0.9V or +3.6V, V
CC
> V
L
IOVL_ source current 20FA, V
IOVCC_
= V
L
to
V
CC
(V
CC
R
V
L
)
IOVL_ sink current 5mA, V
IOVCC_
P
0.05V
IOVCC_ source current 20FA, V
IOVL_
= V
L
IOVCC_ sink current 5mA, V
IOVL_
P
0.05V
V
L
= +0.9V, V
CC
= +1.65V
V
L
= +0.9V, IOVL_ = GND, V
CC
= +1.65V
V
L
= +3.3V, IOVL_ = GND, V
CC
= +5V
V
CC
= +1.65V, IOVCC_ = GND
V
CC
= +5V, IOVCC_ = GND
9
22
26
6.8
26
6.5
0.7 x V
CC
0.25
48
0.7 x V
L
0.2
V
L
- 0.15
0.2
V
CC
- 0.4
0.2
V
L
- 0.2
0.15
V
V
V
V
V
V
V
V
V
V
ns
I
I
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
RISE/FALL TIME ACCELERATOR STAGE
Maxim Integrated
3
MAX14591
High-Speed, Open-Drain Capable
Logic-Level Translator
TIMING CHARACTERISTICS
(V
CC
= +1.65V to +5.5V, V
L
= +0.9V to +3.6V, V
CC
R
V
L
,
TS
= V
L
, C
VCC
= 1FF, C
VL
= 0.1FF, C
IOVL_
P
100pF, C
IOVCC_
P
100pF, T
A
= -40NC to +85NC, unless otherwise noted. Typical values are at V
CC
= +3V, V
L
= +1.2V and T
A
= +25NC. All timing is 10% to 90%
for rise time and 90% to 10% for fall time.) (Note 5)
PARAMETER
Turn-On Time for Q1
SYMBOL
t
ON
t
RCC
CONDITIONS
V
TS
= 0V to V
L
(see the
Block Diagram)
Push-pull driving, V
L
= +1.2V, V
CC
= +3V
(Figure 1)
Open-drain driving, V
L
= +1.2V, V
CC
= +3V
(Figure 2)
Push-pull driving, V
L
= +1.2V, V
CC
= +3V
(Figure 1)
Open-drain driving, V
L
= +1.2V, V
CC
= +3V
(Figure 2)
Push-pull driving, V
L
= +1.2V, V
CC
= +3V
(Figure 3)
Open-drain driving, V
L
= +1.2V, V
CC
= +3V
(Figure 4)
Push-pull driving, V
L
= +1.2V, V
CC
= +3V
(Figure 3)
Open-drain driving, V
L
= +1.2V, V
CC
= +3V
(Figure 4)
Push-pull driving,
Rising
V
L
= +1.2V, V
CC
= +3V
Falling
(Figure 1)
Push-pull driving,
Rising
V
L
= +1.2V, V
CC
= +3V
Falling
(Figure 3)
Input rise time/fall time < 6ns
Push-pull operation
Open-drain operation (Note 6)
8
4
MIN
TYP
80
3.7
7.9
5.1
6.1
2.7
13
2.8
3.3
3.4
3
1.9
1.5
7
8
3
7
1.3
12
ns
8
ns
15
ns
MAX
200
10
ns
UNITS
Fs
IOVCC_ Rise Time
IOVCC_ Fall Time
t
FCC
IOVL_ Rise Time
t
RL
IOVL_ Fall Time
t
FL
Propagation Delay
(Driving IOVL_)
Propagation Delay
(Driving IOVCC_)
Channel-to-Channel Skew
Maximum Data Rate
t
PD_LCC
ns
t
PD_CCL
t
SKEW
ns
ns
MHz
Note 2:
All devices are 100% production tested at T
A
= +25NC. Limits over the operating temperature range are guaranteed by
design and not production tested.
Note 3:
V
L
must be less than or equal to V
CC
during normal operation. However, V
L
can be greater than V
CC
during startup and
shutdown conditions.
Note 4:
V
IHL
, V
ILL
, V
IHC
, and V
ILC
are intended to define the range where the accelerator triggers.
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