VS-16CDH02HM3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 2 x 8 A FRED Pt
®
FEATURES
• Hyperfast recovery time, reduced Q
rr
, and soft
recovery
K
• 175 °C maximum operating junction temperature
• Specified for output and snubber operation
• Low forward voltage drop
1
2
Top View
Bottom View
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TO-263AC (SMPD)
K
Cathode
Anode 1
Anode 2
DESCRIPTION / APPLICATIONS
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
T
J
max.
Diode variation
TO-263AC (SMPD)
2x8A
200 V
0.77 V
27 ns
175 °C
Dual die
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, telecom, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
per device
per diode
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
solder pad
= 155 °C
T
J
= 25 °C, 6 ms square pulse
TEST CONDITIONS
VALUES
200
16
8
190
100
A
UNITS
V
Non-repetitive peak surge current
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage, per diode
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
TEST CONDITIONS
I
R
= 100 μA
I
F
= 8 A
I
F
= 8 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 200 V
MIN.
200
-
-
-
-
-
TYP.
-
0.93
0.77
-
6
23
MAX.
-
1.03
0.87
2
100
-
μA
pF
V
UNITS
Reverse leakage current, per diode
Junction capacitance, per diode
Revision: 10-Feb-15
Document Number: 95813
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16CDH02HM3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 8 A,
dI
F
/dt = 200 A/μs,
V
R
= 160 V
MIN.
-
-
-
-
-
-
-
-
TYP.
27
-
23
35
2.8
5
30
90
MAX.
-
25
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance, per diode
junction to solder pad
Approximate weight
Marking device
Case style TO-263AC (SMPD)
SYMBOL
T
J
, T
Stg
R
thJ-Sp
TEST CONDITIONS
MIN.
-55
-
TYP.
-
1.8
0.55
0.02
16CDH02
MAX.
+175
2.5
UNITS
°C
°C/W
g
oz.
I
F
- Instantaneous Forward Current (A)
100
100
T
J
= 175 °C
10
I
R
- Reverse Current (μA)
10
1
T
J
= 150 °C
T
J
= 175 °C
T
J
= 125 °C
0.1
0.01
T
J
= 25 °C
0.001
0.0001
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
50
100
150
200
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 10-Feb-15
Document Number: 95813
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16CDH02HM3
www.vishay.com
Vishay Semiconductors
100
C
T
- Junction Capacitance (pF)
10
0
50
100
150
200
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.0001
0.001
0.01
0.1
1
10
0.01
0.00001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
180
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
9
0
2
4
6
8
10
12
14
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
RMS limit
Allowable Case Temperature (°C)
170
165
DC
160
155
150
See
note
(1)
145
Square
wave (D = 0.50)
80 % rated V
R
applied
Average Power Loss (W)
175
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 5);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 10-Feb-15
Document Number: 95813
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16CDH02HM3
www.vishay.com
Vishay Semiconductors
180
160
140
125 °C
120
45
40
35
125 °C
30
Q
rr
(nC)
t
rr
(ns)
100
80
60
40
20
0
25 °C
25
20
25 °C
15
10
5
100
1000
100
1000
dI
F
/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 10-Feb-15
Document Number: 95813
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16CDH02HM3
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
16
C
D
H
02
H
M3
1
1
2
3
-
-
-
2
3
4
5
6
7
8
Vishay
Semiconductors
product
Current rating (16 A)
Circuit configuration:
C = common cathode
4
5
6
7
8
-
-
-
-
-
D =
SMPD
package
Process type,
H = hyperfast recovery
Voltage code (02 = 200 V)
H = AEC-Q101
qualified
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-16CDH02HM3/I
QUANTITY PER REEL
2000
MINIMUM ORDER QUANTITY
2000
PACKAGING DESCRIPTION
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95604
www.vishay.com/doc?95566
www.vishay.com/doc?88869
Revision: 10-Feb-15
Document Number: 95813
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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