NMSD200B01
200 mA SYNCHRONOUS RECTIFIER FEATURING N-MOSFET AND SCHOTTKY DIODE
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General Description
•
NMSD200B01 is best suited for switching voltage
regulator and power management applications. It
improves efficiency and reliability of DC-DC controllers
used in Voltage Regulator Modules (VRM) and can
support continuous maximum current of 200mA. It
features an ESD protected discrete N-MOSFET with low
on-resistance and a discrete Schottky diode with low
forward drop. It reduces component count, consumes
less space and minimizes parasitic losses. The
component devices can be used as a part of a circuit or
as a stand alone discrete device.
6
5
4
1
2
3
Features
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N-MOSFET with ESD Gate Protection
N-MOSFET with Low On-Resistance (R
DS(ON)
)
Low V
f
Schottky Diode
Low Static, Switching and Conduction Losses
Good Dynamic Performance
Surface Mount Package Suited for Automated Assembly
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Fig 1. SOT-363
Mechanical Data
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Case: SOT-363
Case Material: Molded Plastic. "Green Molding"
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 7
Ordering Information: See Last Page
Weight: 0.006 grams (approximate)
Sub-Components
DMN601K_DIE (ESD Protected)
SD103AWS_DIE
Reference
Q1
D1
Fig 2. Schematic and Pin Configuration
Device Type
N-MOSFET
Schottky Diode
Figure
2
2
Maximum Ratings, Total Device
Characteristic
Power Dissipation (Note 3)
Power Derating Factor above 25
°C
Output Current
@T
A
= 25°C unless otherwise specified
Symbol
P
d
P
der
I
out
Value
200
1.6
200
Unit
mW
mW/°C
mA
Thermal Characteristics
Characteristic
Junction Operation and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Note 3)
(Equivalent to one heated junction of N-MOSFET)
Notes:
1.
2.
3.
Symbol
T
j
, T
stg
R
θ
JA
Value
-55 to +150
625
Unit
°C
°C/W
No purposefully added lead.
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30911 Rev. 7 - 2
1 of 8
www.diodes.com
NMSD200B01
© Diodes Incorporated
Maximum Ratings:
@T
A
= 25°C unless otherwise specified
Sub-Component Device: ESD Protected N-Channel MOSFET (Q1)
Characteristic
Drain Source Voltage
Drain Gate Voltage (RGS <+ 1MOhm)
Gate Source Voltage
Drain Current (Page 1: Note 3)
Continuous Source Current
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
S
@T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
VR
Continuous
Pulsed (tp<50 uS)
Continuous (V
gs
=10V)
Pulsed (tp<10uS, Duty Cycle<1%)
Value
60
60
+/-20
+/-40
200
800
200
Unit
V
V
V
mA
mA
Sub-Component Device: Schottky Diode (D1)
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Page 1: Note 3)
Non-Repetitive Peak Forward Surge Current @ t<1.0 s
Value
40
28
350
1.5
Unit
V
V
mA
A
V
R(RMS)
I
FM
I
FSM
Electrical Characteristics:
ESD Protected N-Channel MOSFET (Q1)
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage, BV
DSS
Zero Gate Voltage Drain Current (Drain Leakage Current)
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
ON CHARACTERISTICS (Note 4)
Gate Source Threshold Voltage (Control Supply Voltage)
Static Drain-Source On-State Voltage
On-State Drain Current
Static Drain-Source On Resistance
@T
A
= 25°C unless otherwise specified
Symbol
V
BR(DSS)
I
DSS
I
GSSF
I
GSSR
V
GS(th)
V
DS(on)
I
D(on)
R
DS (on)
Min
60
⎯
⎯
⎯
1
1.1
⎯
⎯
500
⎯
⎯
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
1.6
1.8
0.09
0.62
⎯
1.6
1.25
260
⎯
⎯
⎯
⎯
Max
⎯
1
10
-10
2.5
3
1.5
1.25
⎯
3
2
⎯
50
25
5
20
40
1.5
300
800
Unit
V
μA
μA
μA
V
V
V
V
mA
Test Condition
V
GS
= 0V, I
D
= 10μA
V
GS
= 0V, V
DS
= 60V
V
GS
= 20V, V
DS
= 0V
V
GS
= -20 V, V
DS
= 0V
V
DS
= V
GS
=10V, I
D =
0.25mA
V
DS
= V
GS
= 10V, I
D =
1mA
V
GS
= 5V, I
D
= 50mA
V
GS
= 10V, I
D
= 500mA
V
GS
= 10V, V
DS
>=2*V
DS(ON)
V
GS
= 5V, I
D
= 50mA
V
GS
= 10V, I
D
= 500mA
V
DS
>=2*V
DS(ON),
I
D
=200mA
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
⎯
⎯
V
GS
= 0V, I
S
= 300 mA*
⎯
⎯
Ω
mS
pF
pF
pF
ns
ns
V
mA
mA
Forward Transconductance
g
FS
Dynamic Characteristics
Input Capacitance
C
iss
Output Capacitance
C
oss
Reverse Transfer Capacitance
C
rss
Switching Characteristics
Turn-On Delay Time
t
d(on)
Turn-Off Delay Time
t
d(off)
Drain-Source (Body) Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward On-Voltage
V
SD
Maximum Continuous Drain-Source Diode Forward Current
I
S
(Reverse Drain Current)
Maximum Pulsed Drain-Source Diode Forward Current
I
SM
0.88
⎯
⎯
Electrical Characteristics: Schottky Barrier Diode (D1)
Characteristic
Reverse Breakdown Voltage (Note 4)
Forward Voltage Drop (Note 4)
Peak Reverse Current (Note 4)
Total Capacitance
Reverse Recovery Time
Notes:
@T
A
= 25°C unless otherwise specified
Unit
V
V
μA
pF
ns
Test Condition
I
R
= 10μA
I
F
=20mA
I
F
=200mA
V
R
= 30V
V
R
= 0V, f = 1.0 MHz
I
F
=I
R
= 200 mA, I
rr
= 0.1xI
R
, R
L
= 100
Ω
Symbol
V
(BR)R
V
FM
I
RM
C
T
t
rr
Min
40
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
28
10
Max
⎯
0.37
0.6
5
⎯
⎯
4. Short duration pulse test used to minimize self-heating effect.
DS30911 Rev. 7 - 2
2 of 8
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NMSD200B01
© Diodes Incorporated
Typical Characteristics
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 3, Max Power Dissipation vs. Ambient Temperature
Typical N-Channel MOSFET-Q1 (ESD Protected) Characteristics
1.4
1.2
I
D
, DRAIN CURRENT (A)
1.0
0.8
0.8
0.7
I
D
, DRAIN CURRENT (A)
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Output Characteristics
5
0.6
0.5
0.4
0.3
0.2
0.1
0
0
1
4
2
3
5
V
GS
, GATE-SOURCE VOLTAGE
Fig. 5 Transfer Characteristics
6
0.6
0.4
0.2
0
2
V
GS(th),
GATE THRESHOLD VOLTAGE (V)
10
1.5
1
R
DS(ON)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
Ω
)
1
0.5
-25
75 100 125 150
0
25
50
T
ch
, JUNCTION TEMPERATURE (°C)
Fig. 6 Gate Threshold Voltage vs. Junction Temperature
0
-50
0.01
0.1
1
I
D
,
DRAIN CURRENT (A)
Fig. 7 Static Drain-Source On-Resistance vs. Drain Current
0.1
0.001
DS30911 Rev. 7 - 2
3 of 8
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NMSD200B01
© Diodes Incorporated
10
R
DS(on),
STATIC DRAIN-SOURCE
ON-RESISTANCE (
Ω)
1
0.1
I
D,
DRAIN CURRENT (A)
Fig. 8 Static Drain-Source On-Resistance vs. Drain Current
0
V
GS,
GATE SOURCE VOLTAGE (V)
Fig. 9 Static Drain-Source On-Resistance vs. Gate-Source Voltage
0
T
j
, JUNCTION TEMPERATURE (
°
C)
Fig. 10
Static Drain-Source On-State Resistance
vs. Junction Temperature
1
DS30911 Rev. 7 - 2
4 of 8
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g
FS
, FORWARD TRANSCONDUCTANCE (mS)
I
S
, REVERSE DRAIN CURRENT (A)
I
DR
, REVERSE DRAIN CURRENT (A)
NMSD200B01
© Diodes Incorporated
Schottky Barrier Diode – D1 Characteristics
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
1
1000
0.1
T
A
= 125
°
C
T
A
= 75
°
C
100
10
0.01
T
A
= 25
°
C
T
A
= 0
°
C
1
0.001
T
A
= -40
°
C
0.1
0.0001
0
200
400
600
800
1000
V
F
, INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 14 Forward Characteristics
30
0.01
0
5
10
15
20
25
30
35
40
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 15 Reverse Characteristics
25
C
T
, TOTAL CAPACITANCE (pF)
20
15
10
5
0
0
10
20
30
40
V
R
, REVERSE VOLTAGE (V)
Fig. 16 Total Capacitance vs. Reverse Voltage
DS30911 Rev. 7 - 2
5 of 8
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NMSD200B01
© Diodes Incorporated
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