®
BYW80F/FP-200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
MAIN PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max)
V
F
(max)
trr (max)
20 A
200 V
150°C
0.85 V
35 ns
TO-220AC
BYW80-200
K
A
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
DESCRIPTION
Single chip rectifier suited for Switch Mode Power
Supplies and high frequency DC to DC converters.
Packaged in TO-220AC, ISOWATT220AC and
TO-220FPAC this device is intended for use in low
voltage, high frequency inverters, free wheeling
and polarity protection applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
Parameter
Repetitive peak reverse voltage
RMS forward current
I
F(RMS)
I
F(AV)
Average forward current
δ
= 0.5
TO-220AC
I
FSM
Tstg
Tj
Surge non repetitive forward current
Storage and junction temperature range
Maximum operating temperature range
FEATURES
Suited for SMPS
Very low forward losses
Negligible switching losses
High surge current capability
Insulated packages:
ISOWATT220AC / TO-220FPAC:
Insulation voltage = 2000 V DC
Capacitance = 12 pF
s
s
s
s
s
b
O
so
te
le
r
P
d
o
uc
s)
t(
K
A
ISOWATT220AC
BYW80F-200
P
te
le
od
r
s)
t(
uc
A
K
TO-220FPAC
BYW80FP-200
Value
200
20
10
10
100
- 65 to + 150
+ 150
Unit
V
A
A
Tc=120°C
ISOWATT220AC Tc=95°C
TO-220FPAC
tp=10ms
sinusoidal
A
°C
°C
January 2002 - Ed: 3G
1/7
BYW80F/FP-200
THERMAL RESISTANCE
Symbol
Rth (j-c)
Junction to case
Parameter
TO-220AC
ISOWATT220AC / TO-220FPAC
Value
2.5
4.7
Unit
°C/W
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
I
R
*
T
j
= 25°C
T
j
= 100°C
V
F **
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
I
F
= 7 A
I
F
= 15 A
I
F
= 15 A
Test Conditions
V
R
= V
RRM
Min.
Typ.
Max.
10
1
Pulse test : * tp = 5 ms, duty cycle < 2 %
** tp = 380
µs,
duty cycle < 2 %
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
RECOVERY CHARACTERISTICS
Symbol
trr
Test Conditions
I
F
= 0.5A
I
R
= 1A
T
j
= 25°C
Irr = 0.25A
I
F
= 1A
V
R
= 30V
tfr
T
j
= 25°C
T
j
= 25°C
I
F
= 1A
V
FR
= 1.1 x V
F
I
F
= 1A
tr = 10 ns
V
FP
tr = 10 ns
To evaluate the conduction losses use the following equation :
P = 0.65 x I
F(AV)
+ 0.027 x I
F2(RMS)
b
O
so
t
le
P
e
ro
uc
d
s)
t(
V
Unit
µA
mA
P
te
le
Min.
od
r
s)
t(
uc
0.85
1.05
1.15
Typ.
Max.
25
35
Unit
ns
dI
F
/dt = -50A/µs
15
2
ns
V
2/7
BYW80F/FP-200
Fig. 1:
Average forward power dissipation versus
average forward current
P F(av)(W)
=0.1
=0.05
=0.2
=0.5
=1
Fig. 2:
Peak current versus form factor
14
12
10
8
6
4
2
200
175
150
125
100
T
IM(A)
T
P=10W
=tp/T
tp
I
M
75
50
P=5W
P=15W
I F(av)(A)
1
2
3
4
5
6
7
8
=tp/T
tp
25
0
0
0
0
9 10 11 12 13 14
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Fig. 3:
Forward voltage drop versus forward cur-
rent (maximum values)
VFM(V)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Tj=125
o
C
Fig. 4:
Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AC)
1.0
K
Zth(j-c) (tp.
K =
Rth(j-c)
=0.5
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
0.5
=0.2
=0.1
b
O
0.2
so
te
le
)
ro
P
uc
d
s)
t(
1
P
te
le
1.0E-02
od
r
s)
t(
uc
T
Single pulse
IFM(A)
0.1
1
10
100
0.1
tp(s)
1.0E-01
=tp/T
tp
1.0E-03
1.0E+00
Fig. 5:
Relative variation of thermal impedance
junction to case versus pulse duration.
(ISOWATT220AC / TO-220FPAC)
1
K
Zth(j-c) (tp.
K =
Rth(j-c)
)
Fig. 6:
Non repetitive surge peak forward current
versus overload duration (TO-220AC)
IM(A)
100
90
80
70
60
50
40
0.8
=0.5
0.6
Tc=25
o
C
Tc=75
o
C
Tc=120
o
C
0.4
=0.1
=0.2
T
Single pulse
0.2
30
IM
20
10
tp
0
1.0E-03
tp(s)
1.0E-02
1.0E-01
=tp/T
t
=0.5
t(s)
0.01
0.1
1
1.0E+00
1.0E+01
0
0.001
3/7
BYW80F/FP-200
Fig. 7:
Non repetitive surge peak forward current
versus overload duration (ISOWATT220AC /
TO-220FPAC)
IM(A)
Fig. 8:
Average current versus ambient tempera-
ture (duty cycle : 0.5) (TO-220AC)
I F(av)(A)
Rth(j-a)=Rth(j-c)
80
70
60
50
40
30
20
10
12
11
10
9
8
7
Tc=25
o
C
Tc=50
o
C
Rth(j-a)=15
o
C/W
=0.5
6
5
4
3
2
1
=tp/T
tp
T
IM
t
=0.5
Tc=95
o
C
t(s)
0.1
1
10
Tamb(
o
C)
60
80
100
0
0.001
0.01
0
0
20
40
Fig. 9:
Average current versus ambient tempera-
ture (duty cycle: 0.5) (ISOWATT220AC /
TO-220FPAC)
12
11
10
9
8
7
6
5
4
3
2
1
0
0
Fig. 10:
Junction capacitance versus reverse volt-
age applied (Typical values)
C(pF)
I F(av)(A)
Rth(j-a)=Rth(j-c)
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
Rth(j-a)=15
o
C/W
=0.5
T
=tp/T
tp
b
O
so
te
le
ro
P
uc
d
s)
t(
140
160
120
P
te
le
od
r
s)
t(
uc
Tamb(
o
C)
100
VR(V)
20
40
60
80
120
140
160
Fig. 11:
Recovery charges versus dI
F
/dt.
Fig. 12:
Peak reverse current versus dI
F
/dt.
QRR(nC)
I RM(A)
90% CONFIDENCE
Tj=125
o
C
IF=IF(av)
90% CONFIDENCE
Tj=125
o
C
IF=IF(av)
dIF/dt(A/us)
dIF/dt(A/us)
4/7
BYW80F/FP-200
Fig. 13:
Dynamic parameters versus junction
temperature
O
QRR;IRM[Tj]/QRR;IRM[Tj=125 C]
IRM
QRR
Tj(
o
C)
PACKAGE MECHANICAL DATA
TO-220AC (JEDEC outline)
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
REF.
A
H2
A
C
b
O
L7
so
C
D
E
F
te
le
Min.
4.40
1.23
2.40
0.49
0.61
1.14
4.95
ro
P
uc
d
s)
t(
P
te
le
DIMENSIONS
Inches
Min.
0.173
0.048
0.094
0.019
0.024
0.044
0.194
0.393
0.511
0.104
0.600
0.244
0.137
0.147
Max.
0.181
0.051
0.107
0.027
0.034
0.066
0.202
0.409
0.551
0.116
0.620
0.259
0.154
0.151
Max.
4.60
1.32
2.72
0.70
0.88
1.70
5.15
od
r
s)
t(
uc
Millimeters
L5
ØI
L6
L2
F1
G
L9
D
H2
L2
L4
L5
L6
L7
L9
M
10.00
13.00
2.65
15.25
6.20
3.50
3.75
10.40
14.00
2.95
15.75
6.60
3.93
3.85
F1
L4
16.40 typ.
0.645 typ.
F
M
E
G
2.6 typ.
0.102 typ.
Diam. I
5/7
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