BFR106
Low Noise Silicon Bipolar RF Transistor
•
High linearity low noise RF transistor
•
22 dBm OP1dB and 31 dBm OIP3
@ 900 MHz, 8 V, 70 mA
•
For UHF / VHF applications
•
Driver for multistage amplifiers
•
For linear broadband and antenna amplifiers
•
Collector design supports 5 V supply voltage
•
Pb-free (RoHS compliant) package
•
Qualification report according to AEC-Q101 available
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFR106
Parameter
Marking
R7s
Pin Configuration
1=B
2=E
Symbol
V
CEO
3=C
Value
Package
SOT23
Unit
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Collector-emitter voltage,
T
A
= 25°C
T
A
= -55°C
V
16
15
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
≤
76 °C
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
J
T
Stg
Symbol
R
thJS
20
20
3
210
21
700
150
-55 ... 150
Value
Unit
mA
mW
°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
2)
105
K/W
1
T
is measured on the collector lead at the soldering point to the pcb
S
2
For calculation of
R
t
hJS
please refer to Application Note AN077 (Thermal Resistance Calculation)
1
2013-11-21
BFR106
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 20 V,
V
BE
= 0
V
CE
= 10 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 2 V,
I
C
= 0
DC current gain
I
C
= 70 mA,
V
CE
= 8 V, pulse measured
h
FE
70
100
140
-
I
EBO
-
1
30
I
CBO
I
CES
-
-
-
-
0.001
1
1
0.03
30
nA
µA
V
(BR)CEO
15
-
-
V
Symbol
min.
Values
typ.
max.
Unit
2
2013-11-21
BFR106
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
AC Characteristics
(verified by random sampling)
Transition frequency
f
T
I
C
= 70 mA,
V
CE
= 8 V,
f
= 500 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 10 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Minimum noise figure
I
C
= 20 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
f
= 900 MHz
I
C
= 20 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
f
= 1.8 GHz
NF
min
-
-
1.8
3
-
-
dB
C
eb
-
3.9
-
C
ce
-
0.27
-
C
cb
-
0.85
1.2
pF
3.5
5
-
GHz
3
2013-11-21
BFR106
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
AC Characteristics
(verified by random sampling)
Power gain, maximum available
1)
I
C
= 70 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 900 MHz
I
C
= 70 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Transducer gain
I
C
= 70 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 900 MHz
I
C
= 70 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1.8 GHz
Third order intercept point at output
2)
V
CE
= 8 V,
I
C
= 70 mA,
f
= 0.9 GHz ,
Z
S
=Z
L
=50
Ω
1dB compression point
I
C
= 70 mA,
V
CE
= 8 V, Z
S
=Z
L
=50
Ω
,
f
= 0.9 GHz
1/2
ma = |
S
21e /
S
12e | (k-(k²-1) )
2
IP
value depends on termination of all intermodulation frequency components.
3
1
G
Unit
max.
dB
typ.
G
ma
-
-
|S
21e
|
2
-
-
IP
3
-
10.5
5
31
-
-
-
13
8.5
-
-
dB
dBm
P
-1dB
-
22
-
Termination used for this measurement is 50
Ω
from 0.1 MHz to 6 GHz
4
2013-11-21
BFR106
Total power dissipation
P
tot
=
ƒ
(T
S
)
750
mW
600
550
P
tot
500
450
400
350
300
250
200
150
100
50
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
5
2013-11-21
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