IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
D2
PA
K
BYV29B-600
Rectifier diode ultrafast
Rev. 2 — 14 September 2011
Product data sheet
1. Product profile
1.1 General description
Ultra-fast, epitaxial rectifier diode in a surface mount plastic package.
Product availability:
BYV29B-600 in SOT404 (D2PAK).
1.2 Features and benefits
Low forward voltage
Soft recovery characteristic
Fast switching
High thermal cycling performance.
1.3 Applications
Switched-mode power supplies
Low loss rectification.
1.4 Quick reference data
V
R
600 V
I
F(AV)
9 A
V
F
1.03 V
t
rr
60 ns
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning - SOT404 (D2PAK), simplified outline and symbol
Description
no connection
cathode (k)
anode (a)
mounting base;
connected to cathode (k)
2
1
3
[1]
Simplified outline
mb
Symbol
K
A
001aaa020
SOT404 (D2PAK)
[1]
It is not possible to make connection to pin 2 of the SOT404 package.
NXP Semiconductors
BYV29B-600
Rectifier diode ultrafast
3. Ordering information
Table 2.
Ordering information
Package
Name
BYV29B-600
D2PAK
Description
Version
plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT404
Type number
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
repetitive peak forward current
non-repetitive peak forward current
square wave;
= 0.5; T
mb
120
C
square wave; t = 25
s;
= 0.5;
T
mb
120
C
sinusoidal; with reapplied V
RRM(max)
t
p
= 10 ms
t
p
= 8.3 ms
T
stg
T
j
[1]
[1]
Conditions
Min
-
-
-
-
-
Max
600
600
600
9
18
Unit
V
V
V
A
A
-
-
40
-
70
77
+150
+150
A
A
C
C
storage temperature
junction temperature
Neglecting switching and reverse current losses.
BYV29B_600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 14 September 2011
2 of 13
NXP Semiconductors
BYV29B-600
Rectifier diode ultrafast
20
P
F
(W)
15
δ = 0.5
003aaa446
100
T
mb(max)
(°C)
112.5
20
P
F
(W)
16
2.2
12
2.8
4
8
003aaa447
δ=1
a = 1.57
1.9
100
T
mb(max)
(°C)
110
120
10
δ = 0.2
δ = 0.1
P
δ=
t
p
T
125
130
5
t
p
T
0
0
4
8
12
I
F(AV)
(A)
16
t
137.5
4
140
150
0
0
4
8
I
F(AV)
(A)
12
150
Square current waveform
Sinusoidal current waveform
I
F
AV
=
I
F
RMS
Fig 1.
Maximum forward power dissipation (square
current waveform) as a function of average
forward current.
Fig 2.
I
F
RMS
-
a
=
------------------
I
F
AV
Maximum forward power dissipation
(sinusoidal current waveform) as a function of
average forward current.
BYV29B_600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 14 September 2011
3 of 13
NXP Semiconductors
BYV29B-600
Rectifier diode ultrafast
5. Thermal characteristics
Table 4.
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Conditions
in free air
Min Typ Max Unit
-
-
-
50
2.5
-
K/W
K/W
thermal resistance from junction to mounting base
Figure 3
thermal resistance from junction to ambient
Symbol Parameter
5.1 Transient thermal impedance
10
Z
th(j-mb)
(K/W)
1
003aaa453
10
-1
P
10
-2
t
10
t
p
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
Fig 3.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
BYV29B_600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 14 September 2011
4 of 13
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