AUTOMOTIVE GRADE
PD - 97691A
AUIRF1405
Features
l
l
l
l
l
l
l
l
l
Advanced Planar Technology
Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed
up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified*
HEXFET
®
Power MOSFET
D
V
(BR)DSS
R
DS(on)
typ.
max
I
D (Silicon Limited)
55V
4.6m
5.3m
169A
75A
G
S
I
D (Package Limited)
h
D
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
G
TO-220AB
AUIRF1405
D
S
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
I
D
@ T
C
= 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
Max.
h
118
h
169
75
680
330
2.2
± 20
560
Units
A
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
W
W/°C
V
mJ
A
mJ
V/ns
°C
Ã
d
Repetitive Avalanche Energy
Peak Diode recovery dv/dt
Operating Junction and
e
i
See Fig.12a, 12b, 15, 16
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf in (1.1N m)
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R
JC
R
CS
R
JA
Junction-to-Case
y
y
j
Parameter
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
°C/W
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
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1
10/10/11
AUIRF1405
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
55
–––
–––
2.0
69
–––
–––
–––
–––
–––
0.057
4.6
–––
–––
–––
–––
–––
–––
–––
–––
5.3
4.0
–––
20
250
200
-200
V
V/°C
m
V
S
μA
nA
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 101A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 101A
V
DS
= 55V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
f
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
170
44
62
13
190
130
110
4.5
7.5
5480
1210
280
5210
900
1500
260
66
93
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
I
D
= 101A
V
DS
= 44V
V
GS
= 10V
V
DD
= 38V
I
D
= 101A
R
G
= 1.1
V
GS
= 10V
Conditions
f
f
ns
nH
pF
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
g
D
Between lead,
6mm (0.25in.)
G
from package
S
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig.5
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
Parameter
Min. Typ. Max. Units
–––
–––
169
Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Ã
D
MOSFET symbol
showing the
A
G
integral reverse
–––
–––
680
S
p-n junction diode.
T
J
= 25°C, I
S
= 101A, V
GS
= 0V
–––
–––
1.3
V
–––
88
130
ns T
J
= 25°C, I
F
= 101A
–––
250
380
nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
h
f
f
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
J
= 25°C, L = 0.11mH
R
G
= 25, I
AS
= 101A. (See Figure 12).
I
SD
101A, di/dt
210A/μs, V
DD
V
(BR)DSS
,
T
J
175°C
Pulse width
400μs; duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same charging
time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
R
is measured at T
J
of approximately 90°C.
2
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AUIRF1405
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
TO-220
AEC-Q101-002
N/A
Class M4 (+/-600V)
†††
Class H2 (+/-4000V)
†††
AEC-Q101-001
Class C5 (+/- >2000V)
†††
AEC-Q101-005
Yes
Moisture Sensitivity Level
Machine Model
Human Body Model
Charged Device Model
RoHS Compliant
ESD
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRF1405
1000
I
D
, Drain-to-Source Current (A)
100
10
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
4.5V
20μs PULSE WIDTH
T
J
= 25
°
C
1
10
100
4.5V
20μs PULSE WIDTH
T
J
= 175
°
C
1
10
100
1
0.1
10
0.1
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
T
J
= 175
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
T
J
= 25
°
C
I
D
= 169A
I
D
, Drain-to-Source Current (A)
2.5
100
2.0
1.5
10
1.0
0.5
1
V DS = 25V
20μs PULSE WIDTH
4
6
8
10
12
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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AUIRF1405
100000
V
GS
, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + C
ds gd
20
I
D
= 101A
16
V
DS
= 44V
V
DS
= 27V
C, Capacitance(pF)
10000
Ciss
12
Coss
1000
8
Crss
4
100
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
60
120
180
240
300
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
10000
T
J
= 175
°
C
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
ID, Drain-to-Source Current (A)
1000
100
T
J
= 25
°
C
10
100μsec
1msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
0
1
10
10msec
100
1000
1
0.0
V
GS
= 0 V
0.5
1.0
1.5
2.0
2.5
3.0
1
V
SD
,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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