MUN5233DW1,
NSBC143ZDXV6,
NSBC143ZDP6
Dual NPN Bias Resistor
Transistors
R1 = 4.7 kW, R2 = 47 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
(3)
R
1
Q
1
Q
2
R
2
(4)
(5)
R
1
(6)
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PIN CONNECTIONS
(2)
R
2
(1)
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
•
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C, common for Q
1
and Q
2
, unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
−
Continuous
Input Forward Voltage
Input Reverse Voltage
Symbol
V
CBO
V
CEO
I
C
V
IN(fwd)
V
IN(rev)
Max
50
50
100
30
5
Unit
Vdc
Vdc
mAdc
Vdc
Vdc
MARKING DIAGRAMS
6
SOT−363
CASE 419B
1
7K MG
G
SOT−563
CASE 463A
7K MG
1
SOT−963
CASE 527AD
YM
1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
7K/Y
M
G
= Specific Device Code
= Date Code*
= Pb-Free Package
ORDERING INFORMATION
Device
MUN5233DW1T1G,
SMUN5233DW1T1G
NSBC143ZDXV6T1G
NSBC143ZDXV6T5G
NSBC143ZDP6T5G
Package
SOT−363
SOT−563
SOT−563
SOT−963
Shipping
†
3,000/Tape & Reel
4,000/Tape & Reel
8,000/Tape & Reel
8,000/Tape & Reel
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
June, 2017
−
Rev. 2
37
Publication Order Number:
DTC143ZD/D
MUN5233DW1, NSBC143ZDXV6, NSBC143ZDP6
THERMAL CHARACTERISTICS
Characteristic
MUN5233DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation
(Note 25)
T
A
= 25°C
(Note 26)
Derate above 25°C
(Note 25)
(Note 26)
Thermal Resistance,
Junction to Ambient
(Note 25)
(Note 26)
P
D
187
256
1.5
2.0
670
490
mW
mW/°C
°C/W
Symbol
Max
Unit
R
qJA
MUN5233DW1 (SOT−363) BOTH JUNCTION HEATED
(Note 27)
Total Device Dissipation
(Note 25)
T
A
= 25°C
(Note 26)
Derate above 25°C
(Note 25)
(Note 26)
Thermal Resistance,
Junction to Ambient
(Note 26)
Thermal Resistance,
Junction to Lead (Note 25)
(Note 26)
Junction and Storage Temperature Range
NSBC143ZDXV6 (SOT−563) ONE JUNCTION HEATED
Total Device Dissipation
(Note 25)
T
A
= 25°C
Derate above 25°C
(Note 25)
Thermal Resistance,
Junction to Ambient
(Note 25)
P
D
357
2.9
350
mW
mW/°C
°C/W
(Note 25)
P
D
250
385
2.0
3.0
493
325
188
208
−55
to +150
mW
mW/°C
°C/W
R
qJA
R
qJL
°C/W
T
J
, T
stg
°C
R
qJA
NSBC143ZDXV6 (SOT−563) BOTH JUNCTION HEATED
(Note 27)
Total Device Dissipation
(Note 25)
T
A
= 25°C
Derate above 25°C
(Note 25)
Thermal Resistance,
Junction to Ambient
(Note 25)
P
D
500
4.0
250
−55
to +150
mW
mW/°C
°C/W
°C
R
qJA
T
J
, T
stg
P
D
Junction and Storage Temperature Range
NSBC143ZDP6 (SOT−963) ONE JUNCTION HEATED
Total Device Dissipation
(Note 28)
T
A
= 25°C
(Note 29)
Derate above 25°C
(Note 28)
(Note 29)
Thermal Resistance,
Junction to Ambient
(Note 29)
(Note 28)
231
269
1.9
2.2
540
464
MW
mW/°C
°C/W
R
qJA
NSBC143ZDP6 (SOT−963) BOTH JUNCTION HEATED
(Note 27)
Total Device Dissipation
(Note 28)
T
A
= 25°C
(Note 29)
Derate above 25°C
(Note 28)
(Note 29)
Thermal Resistance,
Junction to Ambient
(Note 29)
(Note 28)
P
D
339
408
2.7
3.3
369
306
−55
to +150
MW
mW/°C
°C/W
R
qJA
Junction and Storage Temperature Range
25. FR−4 @ Minimum Pad.
26. FR−4 @ 1.0
×
1.0 Inch Pad.
27. Both junction heated values assume total power is sum of two equally powered channels.
28. FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
29. FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
T
J
, T
stg
°C
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38
MUN5233DW1, NSBC143ZDXV6, NSBC143ZDP6
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, common for Q
1
and Q
2
, unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
Collector-Base Breakdown Voltage
(I
C
= 10
mA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (Note 30)
(I
C
= 2.0 mA, I
B
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 30)
(I
C
= 5.0 mA, V
CE
= 10 V)
Collector-Emitter Saturation Voltage (Note 30)
(I
C
= 10 mA, I
B
= 1.0 mA)
Input Voltage (Off)
(V
CE
= 5.0 V, I
C
= 100
mA)
Input Voltage (On)
(V
CE
= 0.2 V, I
C
= 5.0 mA)
Output Voltage (On)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
Output Voltage (Off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
Input Resistor
Resistor Ratio
30. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle
≤
2%.
h
FE
V
CE(sat)
V
i(off)
V
i(on)
V
OL
V
OH
R1
R
1
/R
2
80
−
−
−
−
4.9
3.3
0.08
200
−
0.6
0.9
−
−
4.7
0.1
−
0.25
−
−
0.2
−
6.1
0.12
V
Vdc
Vdc
Vdc
Vdc
kW
I
CBO
I
CEO
I
EBO
V
(BR)CBO
V
(BR)CEO
−
−
−
50
50
−
−
−
−
−
100
500
0.18
−
−
nAdc
nAdc
mAdc
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
400
P
D
, POWER DISSIPATION (mW)
350
300
250
200
150
100
50
0
−50
−25
0
25
50
75
100
125
150
(1) (2) (3)
(1) SOT−363; 1.0
×
1.0 Inch Pad
(2) SOT−563; Minimum Pad
(3) SOT−963; 100 mm
2
, 1 oz. Copper Trace
AMBIENT TEMPERATURE (°C)
Figure 66. Derating Curve
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39
MUN5233DW1, NSBC143ZDXV6, NSBC143ZDP6
TYPICAL CHARACTERISTICS
MUN5233DW1, NSBC143ZDXV6
1
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
h
FE
, DC CURRENT GAIN
150°C
1000
V
CE
= 10 V
0.1
150°C
−55°C
25°C
1
10
I
C
, COLLECTOR CURRENT (mA)
100
100
25°C
−55°C
0.01
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 67. V
CE(sat)
vs. I
C
3.2
2.8
C
ob
, CAPACITANCE (pF)
2.4
2
1.6
1.2
0.8
0.4
0
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
100
150°C
10
1
0.1
0.01
Figure 68. DC Current Gain
−55°C
25°C
V
O
= 5 V
0
1
2
V
in
, INPUT VOLTAGE (V)
3
4
0.001
V
R
, REVERSE BIAS VOLTAGE (V)
Figure 69. Output Capacitance
Figure 70. Output Current vs. Input Voltage
10
V
in
, INPUT VOLTAGE (V)
−55°C
1
150°C
25°C
0.1
0
V
O
= 0.2 V
10
20
30
40
I
C
, COLLECTOR CURRENT (mA)
50
Figure 71. Input Voltage vs. Output Current
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40
MUN5233DW1, NSBC143ZDXV6, NSBC143ZDP6
TYPICAL CHARACTERISTICS
NSBC143ZDP6
1
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
1000
I
C
/I
B
= 10
V
CE
= 10 V
150°C
h
FE
, DC CURRENT GAIN
100
25°C
10
−55°C
0.1
150°C
−55°C
25°C
1
10
20
30
40
50
0.01
1
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 72. V
CE(sat)
vs. I
C
2.4
I
C
, COLLECTOR CURRENT (mA)
2
1.6
1.2
0.8
0.4
0
0
10
20
30
40
50
V
R
, REVERSE BIAS VOLTAGE (V)
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
100
150°C
10
1
0.1
0.01
Figure 73. DC Current Gain
C
ob
, CAPACITANCE (pF)
−55°C
25°C
0.001
0
1
2
V
in
, INPUT VOLTAGE (V)
3
V
O
= 5 V
4
Figure 74. Output Capacitance
Figure 75. Output Current vs. Input Voltage
100
V
in
, INPUT VOLTAGE (V)
10
25°C
−55°C
1
150°C
V
O
= 0.2 V
0
10
20
30
40
I
C
, COLLECTOR CURRENT (mA)
50
0.1
Figure 76. Input Voltage vs. Output Current
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41
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