Ordering number : ENA1831A
BFL4037
N-Channel Power MOSFET
500V, 16A, 0.43
Ω
, TO-220F-3FS
Features
•
•
http://onsemi.com
ON-resistance RDS(on)=0.33
Ω
(typ.)
10V drive
•
Input capacitance Ciss=1200pF (typ.)
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *4
Avalanche Current *5
Symbol
VDSS
VGSS
IDc*1
IDpack*2
IDP
PD
Tch
Tstg
EAS
IAV
Limited only by maximum temperature Tch=150°C
Tc=25°C (Our ideal heat dissipation condition)*3
PW≤10μs, duty cycle≤1%
Tc=25°C (Our ideal heat dissipation condition)*3
Conditions
Ratings
500
±30
16
11
60
2.0
40
150
--55 to +150
142
16
Unit
V
V
A
A
A
W
W
°C
°C
mJ
A
Note :
*1
Shows chip capability
*2
Package limited
*3
Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4
VDD=50V, L=1mH, IAV=16A (Fig.1)
*5
L
≤
1mH, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7528-001
10.16
3.18
3.3
4.7
2.54
Ordering & Package Information
Device
BFL4037-1E
Package
TO-220F-3FS
SC-67
Shipping
50
pcs./tube
memo
Pb-Free
BFL4037-1E
Marking
Electrical Connection
2
15.8
15.87
6.68
3.23
FL4037
LOT No.
1
2.76
1.47 MAX
0.8
1
2
3
12.98
3
0.5
1 : Gate
2 : Drain
3 : Source
TO-220F-3FS
2.54
2.54
Semiconductor Components Industries, LLC, 2013
June, 2013
61213 TKIM TC-00002925/90810QB TKIM TC-00002471 No. A1831-1/6
BFL4037
Electrical Characteristics
at Ta=25°C
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
IS=16A, VGS=0V
See Fig.3
IS=16A, VGS=0V, di/dt=100A/μs
VDS=200V, VGS=10V, ID=16A
See Fig.2
VDS=30V, f=1MHz
Conditions
ID=10mA, VGS=0V
VDS=400V, VGS=0V
VGS=±24V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=8A
ID=8A, VGS=10V
Ratings
min
500
100
±10
3
4.5
9
0.33
1200
250
55
26.5
78
146
57
48.6
8.2
27.4
0.95
600
5000
1.3
0.43
5
typ
max
Unit
V
μA
μA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Fig.1 Unclamped Inductive Switching Test Circuit
Fig.2 Switching Time Test Circuit
VIN
VDD=200V
D
≥50Ω
RG
G
10V
0V
S
L
BFL4037
10V
0V
VIN
PW=10μs
D.C.≤1%
G
D
ID=8A
RL=24.7Ω
VOUT
50Ω
VDD
BFL4037
P.G
50Ω
S
Fig.3 Reverse Recovery Time Test Circuit
BFL4037
D
500μH
G
S
VDD=50V
Driver MOSFET
No. A1831-2/6
BFL4037
45
ID -- VDS
Tc=25
°
C
15V
10V
45
ID -- VGS
VDS=20V
Tc= --25°C
25°C
40
35
40
35
Drain Current, ID -- A
30
25
20
15
10
5
0
0
5
10
15
20
8V
Drain Current, ID -- A
30
25
20
15
10
5
75°C
6V
VGS=5V
25
30
IT11732
0
0
2
4
6
8
10
12
14
16
18
20
Drain to Source Voltage, VDS -- V
1.2
RDS(on) -- VGS
Gate to Source Voltage, VGS -- V
1.0
RDS(on) -- Tc
IT11733
ID=8A
Static Drain to Source
On-State Resistance, RDS(on) --
Ω
1.0
0.9
Static Drain to Source
On-State Resistance, RDS(on) --
Ω
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
--50
--25
0
25
50
75
100
125
150
0.8
0.6
Tc=75°C
0.4
A,
=8
ID
V
0V
=1
S
G
25°C
--25°C
0.2
0
3
5
7
9
11
13
15
IT11734
Gate to Source Voltage, VGS -- V
3
|
y
fs
|
-- ID
Case Temperature, Tc --
°C
5
3
2
10
7
5
3
2
1.0
7
5
3
2
IS -- VSD
IT11735
Forward Transfer Admittance,
|
y
fs
|
-- S
2
VDS=10V
VGS=0V
7
5
3
2
25
-25
=-
°
C
Tc
°
C
75
Source Current, IS -- A
10
°
C
7
5
3
0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
5
3
2
0.01
0.2
0.4
0.6
--25
°
C
0.8
1.0
0.1
7
5
Tc=7
5
°
C
25
°
C
1.0
1.2
1.4
IT11737
Drain Current, ID -- A
1000
7
SW Time -- ID
IT11736
10000
7
5
3
2
1000
7
5
3
2
100
7
5
3
2
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
Switching Time, SW Time -- ns
5
3
2
VDD=200V
VGS=10V
f=1MHz
Ciss, Coss, Crss -- pF
Ciss
td (off)
100
7
5
3
2
10
0.1
Coss
tr
tf
td(on)
Crss
2
3
5 7 1.0
2
3
5 7 10
2
3
5
7
10
0
5
10
15
20
25
30
35
40
45
50
Drain Current, ID -- A
IT11738
Drain to Source Voltage, VDS -- V
IT11739
No. A1831-3/6
BFL4037
10
9
VGS -- Qg
VDS=200V
ID=16A
Drain Current, ID -- A
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
ASO
IDP=60A (PW≤10
μs)
IDc(*1)=16A
Gate to Source Voltage, VGS -- V
8
7
6
5
4
3
2
1
0
0
10
20
30
40
50
IT11740
10
μ
s
10
0
μ
s
1m
s
10
10
ms
0m
s
DC
op
era
tio
Operation in this area
is limited by RDS(on).
I
(*2)=11A
Dpack
0.1
7
5
3
2
Tc=25°C
Single pulse
0.01
2 3
5
1.0
45
n
*1.
Shows chip capability
*2.
Our ideal heat dissipation condition
7 10
2
3
5
7 100
2
3
5
7
Total Gate Charge, Qg -- nC
2.5
PD -- Ta
Drain to Source Voltage, VDS -- V
PD -- Tc
IT17060
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
0
20
40
60
80
100
120
140
160
40
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
140
160
2.0
1.5
1.0
0.5
0
Ambient Temperature, Ta --
°C
120
EAS -- Ta
IT11730
Case Temperature, Tc --
°C
IT11742
Avalanche Energy derating factor -- %
100
80
60
40
20
0
0
25
50
75
100
125
150
175
IT10478
Ambient Temperature, Ta --
°C
No. A1831-4/6
BFL4037
Outline Drawing
BFL4037-1E
Mass (g) Unit
1.8
mm
* For reference
No. A1831-5/6
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