PNP small signal transistor
BCX71H
Features
1) Ideal for switching and AF amplifier applications.
2) Complements the BCX70.
Dimensions
(Unit : mm)
2.9
0.4
Package
Type
BCX70H
Code
Basic ordering unit (pieces)
Absolute
maximum ratings
(Ta=25C)
Parameter
Collector-base voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
Collector-emitter voltage
Collector power dissipation
Junction temperature
Storage temperature
∗
Mounted on a 7
×
5
×
0.6 mm CERAMIC SUBSTRATE
Electrical
characteristics
(Ta=25C)
Parameter
Collector-emitter breakdown voltage BV
CEO
Emitter-base breakdown voltage
Collector-emitter cutoff current
Emitter-base cutoff current
ot
Collector-emitter saturation voltage
N
Base-emitter saturation voltage
Base-emitter voltage
DC current transfer ratio
Transition frequency
Collector output capacitance
Noise figure
Collector-base cutoff current
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○
2011 ROHM Co., Ltd. All rights reserved.
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Taping
T116
3000
(2)
(1)
0.95 0.95
1.9
1.3
2.4
Packaging
specifications
(3)
(1)Emitter
(2)Base
(3)Collector
Abbreviated symbol : GBH
Limits
−45
−5
−45
Unit
V
V
V
A
V
CEO
V
EBO
I
C
−0.2
0.2
P
C
Tj
W
W
0.35
150
∗
°C
°C
Tstg
−55
to 150
Symbol
Min.
−45
−5
−
−
−
Typ.
−
−
−
−
−
Max.
−
−
Unit
V
Conditions
R
I
C
= −2mA
BV
EBO
I
CES
V
I
C
= −10μA
V
EB
= −4V
−0.1
−0.1
μ
A
μ
A
V
V
V
CE
= −45V
I
EBO
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
V
BE(on)
h
FE
f
T
Cob
NF
I
CBO
−
−
−
−
−
−
−0.25
−0.85
−1.05
I
C
/I
B
= −10mA/ −0.25mA
I
C
/I
B
= −50mA/ −1.25mA
I
C
/I
B
= −10mA/ −0.25mA
I
C
/I
B
= −50mA/ −1.25mA
−0.55
V
V
V
−
MHz
pF
dB
−0.6
140
80
−
−
−
−
−
−
−
180
−
−
−
−0.75
310
−
−
6
6
−20
V
CE
= −5V,
I
C
= −2mA
V
CE
= −5V,
I
C
= −2mA
V
CE
= −5V,
I
C
= −50mA
V
CE
= −5V,
I
E
= −10mA,
f=100MHz
V
CB
= −10V,
f=1MHz
V
CE
= −5V,
I
C
= −200μA,
f=1kHz,Rg=2kΩ
V
CB
= −45V,
Ta=150
°C
μ
A
1/2
or
0.95
0.45
0.15
BCX71H
Each lead has same dimensions
0.2Min.
2011.11 - Rev.B
BCX71H
Electrical
characteristics
-100
-100
I
B
=-500uA
-450uA
-400uA
Data Sheet
1000
Ta=25ºC
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
V
CE
=-5V
Ta=25ºC
-80
-10
Ta=125ºC
75ºC
25ºC
-55ºC
I
B
=-350uA
-60
I
B
=-300uA
I
B
=-250uA
DC CURRENT GAIN : h
FE
100
V
CE
=-5V
-3V
-1V
-40
I
B
=-200uA
I
B
=-150uA
-1
-20
I
B
=-50uA
I
B
=0A
-0.1
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig1. Grounded Emitter Propagation
Characteristics
1000
V
CE
=-5V
0
0
-1
-2
-3
-4
-5
-6
-7
-8
-9 -10
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig2. Grounded Emitter Output
Characteristics
10
-1
100
Ta=125ºC
75ºC
25ºC
-55ºC
10
-1
-10
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COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
-1
1
Ta=25ºC
COLLECTOR CURRENT : I
C
(mA)
Fig3. DC Current Gain vs.
Collector Current (I)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
I
C
/I
B
=40/1
DC CURRENT GAIN : h
FE
I
C
/I
B
=40/1
20/1
10/1
Ta=125ºC
75ºC
25ºC
-55ºC
-0.1
0.1
-100
-1000
-0.01
-0.1
-1
-10
-100
-1000
0.01
-0.1
COLLECTOR CURRENT : I
C
(mA)
Fig4. DC Current Gain vs.
Collector Current (II)
-10
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig6. Collector Saturation Voltage
vs. Collector Current (II)
Ta=25˚C
f=1MHz
I
E
=0A
I
C
=0A
Fig5. Collector Saturation Voltage
vs. Collector Current (I)
BASE SATURATION VOLTAGE : V
BE(sat)
(V)
TRANSITION FREQUENCY : f
T
(
MHz)
I
C
/I
B
=40/1
Ta=-55ºC
25ºC
75ºC
125ºC
-1
Ta=25˚C
V
CE
=
−
12V
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
EMITTER INPUT CAPACITANCE
: Cib (
pF)
1000
20
500
10
200
5
100
2
50
-0.1
-1
R
-10
-100
0.5
1
2
5
10
20
50
100
−0.5
COLLECTOR CURRENT : I
C
(mA)
Fig7. Base Saturation Voltage
vs. Collector Current
EMITTER CURRENT : I
E
(
mA)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.8 Gain bandwidth product vs.
emitter current
Fig.9
N
ot
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c
○
2011 ROHM Co., Ltd. All rights reserved.
2/2
or
-10
-100
-1000
-1
-10
-100
-1000
Cib
Co
b
−1
−2
−5
−10
−20
I
B
=-100uA
Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
2011.11 - Rev.B
Notice
Notes
N
ot
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© 2011 ROHM Co., Ltd. All rights reserved.
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