STTH1502
Ultrafast recovery diode
Main product characteristics
I
F(AV)
V
RRM
T
j
(max)
V
F
(typ)
t
rr
(typ)
15 A
200 V
175° C
0.85 V
20 ns
A
K
K
Features and benefits
■
■
■
■
■
A
K
TO-220AC
STTH1502D
A
K
TO-220FPAC
STTH1502FP
Very low conduction losses
Negligible switching losses
Low forward and reverse recovery time
High junction temperature
Insulated packages
– TO-220FPAC
Electrical insulation 2000 V
DC
– TO-220AC Ins
Electrical insulation 2500 V
RMS
A
K
TO-220AC Ins
STTH1502DI
Description
The STTH1502 uses ST's new 200V planar Pt
doping technology, and is specially suited for
switching mode base drive and transistor circuits.
Packaged in TO-220AC, TO-220FPAC, and
TO-220 Ins, this device is intended for use in low
voltage, high frequency inverters, free wheeling
and polarity protection.
Order codes
Part Number
STTH1502D
STTH1502FP
STTH1502DI
Marking
STTH1502
STTH1502
STTH1502DI
October 2006
Rev 2
www.st.com
1/10
Characteristics
STTH1502
1
Table 1.
Symbol
V
RRM
I
F(RMS)
Characteristics
Absolute ratings (limiting values at T
j
= 25° C, unless otherwise specified)
Parameter
Repetitive peak reverse voltage
RMS forward current
TO-220AC
I
F(AV)
Average forward current,
δ
= 0.5
TO-220AC Ins
TO-220FPAC
I
FSM
T
stg
T
j
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
t
p
= 10 ms Sinusoidal
T
c
= 130° C
T
c
= 105° C
T
c
= 85° C
150
-65 to + 175
175
A
°C
°C
15
A
Value
200
32
Unit
V
A
Table 2.
Thermal parameters
Parameter
TO-220AC
Value
2.5
3.8
5
° C/W
Unit
Symbol
R
th(j-c)
Junction to case
TO-220AC Ins
TO-220FPAC
Table 3.
Symbol
I
R(1)
Static electrical characteristics
Parameter
Reverse leakage current
Test conditions
T
j
= 25° C
T
j
= 125° C
T
j
= 25° C
T
j
= 150° C
V
R
= V
RRM
Min.
Typ
Max.
10
µA
10
1
I
F
= 15 A
I
F
= 30 A
I
F
= 30 A
0.85
1.05
1.15
1
100
1.1
0.95
1.20
1.3
1.15
V
Unit
V
F(2)
Forward voltage drop
T
j
= 125° C
T
j
= 25° C
T
j
= 150° C
1. Pulse test: t
p
= 5 ms,
δ
< 2 %
2. Pulse test: t
p
= 380 µs,
δ
< 2 %
To evaluate the conduction losses use the following equation:
P = 0.74 x I
F(AV)
+ 0.014 I
F2(RMS)
2/10
STTH1502
Table 4.
Symbol
Characteristics
Dynamic characteristics
Parameter
Test conditions
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T
j
= 25° C
I
F
= 1 A, dI
F
/dt = -100 A/µs,
V
R
= 30 V, T
j
= 25° C
Min.
Typ
28
20
5.7
200
1.3
Max.
36
25
7.2
A
ns
V
Unit
ns
t
rr
Reverse recovery time
I
RM
t
fr
V
FP
Reverse recovery current
Forward recovery time
Forward recovery voltage
I
F
= 15 A, dI
F
/dt = -200 A/µs,
V
R
= 160 V, T
j
= 125° C
I
F
= 15 A, dI
F
/dt = 50 A/µs
V
FR
= 1.1 x V
Fmax
, T
j
= 25° C
I
F
= 15 A, dI
F
/dt = 50 A/µs,
T
j
= 25° C
Figure 1.
I
M
(A)
100
Peak current versus duty cycle
Figure 2.
Forward voltage drop versus
forward current (typical values)
T
I
M
200
180
tp
I
FM
(A)
80
P = 20 W
δ
d
=tp/T
160
140
120
100
60
P = 10 W
40
P=5W
80
60
40
20
T
j
=150°C
T
j
=25°C
20
δ
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
FM
(V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
Figure 3.
Forward voltage drop versus
forward current (maximum values)
Figure 4.
Relative variation of thermal
impedance, junction to case,
versus pulse duration (TO-220AC)
I
FM
(A)
200
180
160
140
120
100
80
60
40
20
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T
j
=25°C
T
j
=150°C
Z
th(j-c)
/R
th(j-c)
1.0
Single pulse
TO-220AC
TO-220ACins
V
FM
(V)
tp(s)
0.1
1.E-03
1.E-02
1.E-01
1.E+00
3/10
Characteristics
STTH1502
Figure 5.
Relative variation of thermal
impedance, junction to case,
versus pulse duration
(TO-220FPAC)
Figure 6.
Junction capacitance versus
reverse applied voltage (typical
values)
1.0
Z
th(j-c)
/R
th(j-c)
Single pulse
TO-220FPAC
C(pF)
100
F=1MHz
V
osc
=30mV
RMS
T
j
=25°C
0.1
tp(s)
0.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
10
1
10
100
V
R
(V)
1000
Figure 7.
Q
RR
(nC)
200
I
F
=15A
V
R
=160V
Reverse recovery charges versus
dI
F
/dt (typical values)
Figure 8.
t
RR
(ns)
80
70
60
Reverse recovery time versus dI
F
/dt
(typical values)
I
F
=15A
V
R
=160V
150
T
j
=125°C
50
40
30
T
j
=25°C
T
j
=125°C
100
50
T
j
=25°C
20
10
dI
F
/dt(A/µs)
dI
F
/dt(A/µs)
0
500
0
0
50
100
150
200
250
300
350
400
450
10
100
1000
Figure 9.
I
RM
(A)
16
14
12
10
8
I
F
=15A
V
R
=160V
Peak reverse recovery current
versus dI
F
/dt (typical values)
Figure 10. Dynamic parameters versus
junction temperature
Q
RR
; I
RM
[T
j
] / Q
RR
; I
RM
[T
j
=125°C]
1.4
1.2
1.0
I
F
=15A
V
R
=160V
T
j
=125°C
0.8
0.6
I
RM
6
T
j
=25°C
Q
RR
4
2
dI
F
/dt(A/µs)
0
0
50
100
150
200
250
300
350
400
450
500
0.4
0.2
T
j
(°C)
0.0
25
50
75
100
125
150
4/10
STTH1502
Ordering information scheme
2
Ordering information scheme
STTH
Ultrafast switching diode
Average forward current
15 = 15 A
Repetitive peak reverse voltage
02 = 200 V
Package
D = TO-220AC
FP = TO-220FPAC
DI = TO-220AC Ins
15 02 XX
5/10
能源基础设施
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