Datasheet> 器件分类 > 半导体> 分立半导体> RN1105MFVTPL3

RN1105MFVTPL3: 产品描述Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 2.2K x 47Kohms; 产品类别半导体分立半导体; 文件大小1012KB，共9页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

下载文档详细参数全文预览

RN1105MFVTPL3在线购买

供应商	器件名称	价格	最低购买	库存
	RN1105MFVTPL3	-	-	点击查看	点击购买

RN1105MFVTPL3概述

Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 2.2K x 47Kohms

RN1105MFVTPL3规格参数

参数名称	属性值
产品种类 Product Category	Bipolar Transistors - Pre-Biased
制造商 Manufacturer	Toshiba(东芝)
RoHS	No
Configuration	Single
Transistor Polarity	NPN
Typical Input Resistor	2.2 kOhms
Typical Resistor Ratio	0.047
安装风格 Mounting Style	SMD/SMT
DC Collector/Base Gain hfe Min	80
Collector- Emitter Voltage VCEO Max	50 V
Continuous Collector Current	100 mA
Peak DC Collector Current	100 mA
Pd-功率耗散 Pd - Power Dissipation	150 mW
最大工作温度 Maximum Operating Temperature	+ 150 C
系列 Packaging	Reel
DC Current Gain hFE Max	80
工厂包装数量 Factory Pack Quantity	8000

文档预览

下载PDF文档

全文
预览

RN1101MFV∼RN1106MFV

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT Process)

RN1101MFV,RN1102MFV,RN1103MFV

RN1104MFV,RN1105MFV,RN1106MFV

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

Unit: mm

Ultra-small package, suited to very high density mounting

Incorporating a bias resistor into the transistor reduces the number of parts,

so enabling the manufacture of ever more compact equipment and

lowering assembly cost.

0.8 ± 0.05

0.22 ± 0.05

1.2 ± 0.05

0.32 ± 0.05

0.80 ± 0.05

A wide range of resistor values is available for use in various circuits.

1.2 ± 0.05

Complementary to the RN2101MFV to RN2106MFV

0.4

0.13 ± 0.05

Equivalent Circuit and Bias Resistor Values

Type No.

RN1101MFV

RN1102MFV

RN1103MFV

RN1104MFV

RN1105MFV

RN1106MFV

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

0.5 ± 0.05

1. BASE

VESM

JEDEC

JEITA

TOSHIBA

2. EMITTER

3. COLLECTOR

―

2-1L1A

Absolute Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN1101MFV to 1106MFV

RN1101MFV to 1104MFV

RN1105MFV, 1106MFV

Symbol

CBO

CEO

EBO

(Note 1)

stg

Rating

100

150

−55

to 150

Weight: 1.5 mg (typ.)

Unit

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant

change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Note 1: Mounted on an FR4 board

(25.4

25.4 mm

1.6 mm)

Pad Dimension（Reference）

1.15

0.5

unit mm

：

0.45

0.4

0.45

0.4

2010-03-07

推荐资源

器件捷径: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

热门器件

开源项目推荐更多

热门活动更多

热门文章更多

技术资料推荐更多