BLF8G20LS-400PGVQ,BLF8G20LS-400PGVQ pdf中文资料,BLF8G20LS-400PGVQ引脚图,BLF8G20LS-400PGVQ电路-Datasheet-电子工程世界

BLF8G20LS-400PGVQ: 产品描述RF MOSFET Transistors Power LDMOS transistor; 产品类别半导体分立半导体; 文件大小1MB，共17页; 制造商NXP(恩智浦); 官网地址https://www.nxp.com

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RF MOSFET Transistors Power LDMOS transistor

参数名称	属性值
产品种类 Product Category	RF MOSFET Transistors
制造商 Manufacturer	NXP(恩智浦)
RoHS	Details
Id - Continuous Drain Current	3.4 A
Vds - Drain-Source Breakdown Voltage	65 V
Rds On - Drain-Source Resistance	55 mOhms
技术 Technology	Si
Gain	19 dB
最大工作温度 Maximum Operating Temperature	+ 225 C
安装风格 Mounting Style	SMD/SMT
封装 / 箱体 Package / Case	SOT-1242C-9
系列 Packaging	Tube
Configuration	Single
Forward Transconductance - Min	20.6 S
Operating Frequency	1805 MHz to 1995 MHz
工厂包装数量 Factory Pack Quantity	60
类型 Type	RF Power MOSFET
Vgs - Gate-Source Voltage	13 V
Vgs th - Gate-Source Threshold Voltage	1.9 V

	BLF8G20LS-400PGVQ	BLF8G20LS-400PVJ
描述	RF MOSFET Transistors Power LDMOS transistor	RF MOSFET Transistors Power LDMOS transistor
产品种类 Product Category	RF MOSFET Transistors	RF MOSFET Transistors
制造商 Manufacturer	NXP(恩智浦)	NXP(恩智浦)
RoHS	Details	Details
Id - Continuous Drain Current	3.4 A	3.4 A
Vds - Drain-Source Breakdown Voltage	65 V	65 V
Rds On - Drain-Source Resistance	55 mOhms	55 mOhms
技术 Technology	Si	Si
Gain	19 dB	19 dB
最大工作温度 Maximum Operating Temperature	+ 225 C	+ 225 C
安装风格 Mounting Style	SMD/SMT	SMD/SMT
封装 / 箱体 Package / Case	SOT-1242C-9	SOT-1242C-9
Configuration	Single	Single
Forward Transconductance - Min	20.6 S	20.6 S
Operating Frequency	1805 MHz to 1995 MHz	1805 MHz to 1995 MHz
工厂包装数量 Factory Pack Quantity	60	100
类型 Type	RF Power MOSFET	RF Power MOSFET
Vgs - Gate-Source Voltage	13 V	13 V
Vgs th - Gate-Source Threshold Voltage	1.9 V	1.9 V
系列 Packaging	Tube	Reel

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