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MMBTA56-TP

产品描述Bipolar Transistors - BJT 500mA 80V
产品类别半导体    分立半导体   
文件大小247KB,共4页
制造商MCC
官网地址http://www.mccsemi.com
下载文档 详细参数 全文预览

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MMBTA56-TP概述

Bipolar Transistors - BJT 500mA 80V

MMBTA56-TP规格参数

参数名称属性值
产品种类
Product Category
Bipolar Transistors - BJT
制造商
Manufacturer
MCC
RoHSDetails
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
SOT-23-3
Transistor PolarityPNP
ConfigurationSingle
Collector- Emitter Voltage VCEO Max80 V
Collector- Base Voltage VCBO60 V
Emitter- Base Voltage VEBO4 V
Maximum DC Collector Current0.5 A
Gain Bandwidth Product fT50 MHz
最大工作温度
Maximum Operating Temperature
+ 150 C
高度
Height
1.12 mm
长度
Length
3.04 mm
最小工作温度
Minimum Operating Temperature
- 55 C
系列
Packaging
Cut Tape
系列
Packaging
Reel
系列
Packaging
MouseReel
Pd-功率耗散
Pd - Power Dissipation
225 mW
工厂包装数量
Factory Pack Quantity
3000
宽度
Width
1.4 mm
单位重量
Unit Weight
0.000282 oz

文档预览

下载PDF文档
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
MMBTA55
THRU
MMBTA56
PNP General
Purpose Amplifier
SOT-23
A
D
Features
Halogen
free available upon request by adding suffix "-HF"
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
This device is designed for general purpose amplifier applications at
collector current to 300mA
Markin : MMBTA55=2H/B55, MMBTA56=2GM/B56
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Maximum Ratings
Symbol
V
CEO
Rating
Collector-Emitter Voltage
MMBTA55
MMBTA56
V
CBO
Collector-Base Voltage
MMBTA55
MMBTA56
V
EBO
I
C
T
J
T
STG
Symbol
P
D
R
JA
Symbol
Emitter-Base Voltage
Collector Current, Continuous
Operating Junction Temperature
Storage Temperature
Rating
Total Device Dissipation*
Derate above 25
O
C
Thermal Resistance, Junction to Ambient
O
Rating
60
80
60
80
4.0
500
-55 to +150
-55 to +150
Max
225
1.8
556
Min
Max
Unit
V
C
C
B
V
B
E
V
mA
O
C
O
C
G
F
E
Thermal Characteristics
Unit
mW
mW/
O
C
O
C/W
Units
H
J
K
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
MAX
.120
.104
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Electrical Characteristics @ 25 C Unless Otherwise Specified
Parameter
Collector-Emitter Breakdown Voltage
(1)
(I
C
=1.0mAdc, I
B
=0)
MMBTA55
MMBTA56
Emitter-Base Breakdown Voltage
(I
E
=100ì Adc, I
C
=0)
Collector Cutoff Current
(V
CB
=60Vdc, I
E
=0)
MMBTA55
(V
CB
=80Vdc, I
E
=0)
MMBTA56
Emitter Cutoff Current
(V
CE
=60Vdc, I
B
=0)
DC Current Gain
(V
CE
=1.0Vdc, I
C
=10mAdc)
(V
CE
=1.0Vdc, I
C
=100mA)
Collector-Emitter Saturation Voltage
(I
C
=100mAdc, I
B
=10mAdc)
Base-Emitter On Voltage
(I
C
=100mAdc, V
CE
=1.0Vdc)
Current-Gain—Bandwidth Product
(2)
(I
C
=100mAdc, V
CE
=1.0Vdc, f=100MHz)
OFF CHARACTERISTICS
V
(BR)CEO
60
80
4.0
---
---
---
---
---
---
0.1
0.1
0.1
Vdc
V
(BR)EBO
I
CBO
DIM
A
B
C
D
E
F
G
H
J
K
Vdc
uAdc
uAdc
uAdc
.035
.900
Suggested Solder
Pad Layout
.031
.800
I
CES
ON CHARACTERISTICS
h
FE
100
100
---
---
50
---
---
0.25
1.2
---
---
.079
2.000
inches
mm
V
CE(sat)
V
BE(on)
f
T
Vdc
Vdc
MHz
.037
.950
.037
.950
www.mccsemi.com
Revision:
B
1 of 4
2013/01/01

 
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