SUD40N08-16
Vishay Siliconix
N-Channel 80-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
DS
(V)
80
FEATURES
I
D
(A)
40
r
DS(on)
(W)
0.016 @ V
GS
= 10 V
D
TrenchFETr Power MOSFET
D
175_C Maximum Junction Temperature
D
100% R
g
Tested
TO-252
D
Drain Connected to Tab
G
D
S
G
Top View
Ordering Information:
SUD40N08-16
SUD40N08-16—E3 (Lead Free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle
v
1%)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AR
E
AR
P
D
T
J
, T
stg
Limit
80
"20
40
30
60
40
40
80
136
b
3a
−55
to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
a
J
ti t A bi t
Junction-to-Case
Notes
a. Surface Mounted on 1” x1” FR4 Board.
b. See SOA curve for voltage derating.
Document Number: 71323
S-40272—Rev. C, 23-Feb-04
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t
v
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
15
40
0.85
Maximum
18
50
1.1
Unit
_C/W
C/W
1
SUD40N08-16
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 80 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
g
On-State Drain Current
b
I
DSS
I
D(on)
V
DS
= 80 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 80 V, V
GS
= 0 V, T
J
= 175_C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 40 A
Drain-Source On-State Resistance
b
Forward Transconductance
b
r
DS(on)
g
fs
V
GS
= 10 V, I
D
= 40 A, T
J
= 125_C
V
GS
= 10 V, I
D
= 40 A, T
J
= 175_C
V
DS
= 15 V, I
D
= 40 A
45
60
0.013
0.016
0.027
0.037
S
W
80
2.0
4.0
"100
1
50
250
A
m
mA
V
nA
Symbol
Test Condition
Min
Typ
a
Max
Unit
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 40 V, R
L
= 1.0
W
I
D
^
40 A, V
GEN
= 10 V, R
g
= 2.5
W
0.5
12
52
25
10
V
DS
= 40 V, V
GS
= 10 V, I
D
= 40 A
,
,
V
GS
= 0 V, V
DS
= 25 V, F = 1 MHz
1960
370
200
42
7
13
2.7
20
80
38
15
ns
W
60
nC
pF
Source-Drain Diode Ratings and Characteristic (T
C
= 25_C)
Pulsed Current
Diode Forward Voltage
b
Source-Drain Reverse Recovery Time
I
SM
V
SD
t
rr
I
F
= 40 A, V
GS
= 0 V
I
F
= 40 A, di/dt = 100 A/ms
1.0
45
60
1.5
70
A
V
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
c. Independent of operating temperature.
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Document Number: 71323
S-40272—Rev. C, 23-Feb-04
SUD40N08-16
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
100
V
GS
= 10 thru 7 V
80
I D
−
Drain Current (A)
I D
−
Drain Current (A)
80
100
Transfer Characteristics
60
6V
60
40
40
T
C
= 125_C
25_C
−55_C
20
3, 4 V
5V
20
0
0
2
4
6
8
10
V
DS
−
Drain-to-Source Voltage (V)
0
0
1
2
3
4
5
6
7
V
GS
−
Gate-to-Source Voltage (V)
Transconductance
80
T
C
=
−55_C
r DS(on)
−
On-Resistance (
W
)
g fs
−
Transconductance (S)
60
25_C
0.03
0.04
On-Resistance vs. Drain Current
125_C
40
0.02
V
GS
= 10 V
20
0.01
0
0
20
40
60
80
100
0.00
0
20
40
60
80
100
I
D
−
Drain Current (A)
3000
2500
C
−
Capacitance (pF)
2000
1500
1000
500
0
0
20
40
60
80
V
DS
−
Drain-to-Source Voltage (V)
C
rss
C
oss
I
D
−
Drain Current (A)
20
V
DS
= 10 V
I
D
= 40 A
Capacitance
Gate Charge
V GS
−
Gate-to-Source Voltage (V)
16
C
iss
12
8
4
0
0
15
30
45
60
75
Q
g
−
Total Gate Charge (nC)
Document Number: 71323
S-40272—Rev. C, 23-Feb-04
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3
SUD40N08-16
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.4
2.0
r
DS(on)
−
On-Resiistance
(Normalized)
1.6
1.2
0.8
0.4
0.0
−50
V
GS
= 10 V
I
D
= 40 A
I S
−
Source Current (A)
10
T
J
= 150_C
100
Source-Drain Diode Forward Voltage
1
T
J
= 25_C
0.1
−25
0
25
50
75
100
125
150
175
0.01
0
0.3
0.6
0.9
1.2
V
SD
−
Source-to-Drain Voltage (V)
T
J
−
Junction Temperature (_C)
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature
50
1000
Safe Operating Area
40
I D
−
Drain Current (A)
I D
−
Drain Current (A)
100
Limited by r
DS(on)
10
ms
100
ms
30
10
1 ms
10 ms
1
T
C
= 25_C
Single Pulse
100 ms
1 s, dc
20
10
0
0
25
50
75
100
125
150
175
T
C
−
Case Temperature (_C)
0.1
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10
−4
10
−3
Normalized Thermal Transient Impedance, Junction-to-Case
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
30
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Document Number: 71323
S-40272—Rev. C, 23-Feb-04
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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