BYW82, BYW83, BYW84, BYW85, BYW86
www.vishay.com
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Controlled avalanche characteristics
• Low reverse current
• High surge current loading
949588
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
MECHANICAL DATA
Case:
SOD-64
Terminals:
plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity:
color band denotes cathode end
Mounting position:
any
Weight:
approx. 858 mg
APPLCIATIONS
• Rectification, general purpose
ORDERING INFORMATION
(Example)
DEVICE NAME
BYW82 or BYW83 or BYW84 and
BYW86
BYW82 or BYW84 and
BYW85
BYW85
BYW83 or
BYW86
ORDERING CODE
BYW86-TR
BYW85-TAP
BYW85TR
BYW86TAP
TAPED UNITS
2500 per 10" tape and reel
2500 per ammopack
2500 per 10" tape and reel
2500 per ammopack
MINIMUM ORDER QUANTITY
12 500
12 500
12 500
12 500
PARTS TABLE
PART
BYW82
BYW83
BYW84
BYW85
BYW86
TYPE DIFFERENTIATION
V
R
= 200 V, I
F(AV)
= 3 A
V
R
= 400 V, I
F(AV)
= 3 A
V
R
= 600 V, I
F(AV)
= 3 A
V
R
= 800 V, I
F(AV)
= 3 A
V
R
= 1000 V, I
F(AV)
= 3 A
PACKAGE
SOD-64
SOD-64
SOD-64
SOD-64
SOD-64
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
BYW82
BYW83
Reverse voltage = repetitive peak reverse
voltage
See electrical characteristics
BYW84
BYW85
BYW86
Peak forward surge current
Repetitive peak forward current
Average forward current
Pulse avalanche peak power
Pulse energy in avalanche mode, non
repetitive (inductive load switch off)
i
2
t-rating
Junction and storage temperature range
t
p
= 20 μs, half sine wave, T
j
= 175 °C
I
(BR)R
= 1 A, T
j
= 175 °C
t
p
= 10 ms, half sine wave
SYMBOL
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
FRM
I
F(AV)
P
R
E
R
i
2
t
T
j
= T
stg
VALUE
200
400
600
800
1000
100
18
3
1000
20
40
-55 to +175
UNIT
V
V
V
V
V
A
A
A
W
mJ
A2s
°C
Rev. 2.0, 04-Nov-15
Document Number: 86051
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYW82, BYW83, BYW84, BYW85, BYW86
www.vishay.com
Vishay Semiconductors
TEST CONDITION
Lead length l = 10 mm, T
L
= constant
On PC board with spacing 25 mm
SYMBOL
R
thJA
R
thJA
VALUE
25
70
UNIT
K/W
K/W
MAXIMUM THERMAL RESISTANCE
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
Reverse recovery charge
TEST CONDITION
I
F
= 3 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 100 °C
I
R
= 100 μA, tp/T = 0.01, tp = 0.3 ms
V
R
= 4 V, f = 1 MHz
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
I
F
= 1 A, dI/dt = 5 A/μs, VR = 50 V
l
F
= 1 A, dI/dt = 5 A/μs
SYMBOL
V
F
I
R
I
R
V
(BR)
C
D
t
rr
t
rr
Q
rr
MIN.
-
-
-
-
-
-
-
-
TYP.
-
0.1
5
-
40
3.5
4.5
8
MAX.
1
1
10
1600
60
5
7.5
12
UNIT
V
μA
μA
V
pF
μs
μs
μC
TYPICAL CHARACTERISTICS
(T
amb
= 25
C,
unless otherwise specified)
40
100
RthJA - Therm. Resist.
Junction/Ambient (K/W)
30
I
F
- Forward Current (A)
10
T
j
= 175 °C
1
T
j
= 25 °C
0.1
20
l
10
l
0.01
0
0
94 9563
T
L
= constant
5
10
15
20
25
30
0.001
0
16360
0.4
0.8
1.2
1.6
2.0
I - Lead Length (mm)
V
F
- Forward Voltage (V)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 3 - Forward Current vs. Forward Voltage
I
FAV
- Average Forward Current (A)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
20 40
60 80 100 120 140 160 180
R
thJA
= 70 K/W
PCB: d = 25 mm
V
R
= V
RRM
half sinewave
R
thJA
= 25 K/W
I = 10 mm
P
R
- Reverse Power Dissipation (mW)
350
V
R
= V
RRM
300
250
200
150
100
50
0
25
50
75
100
125
150
175
P
R
-Limit
at 80 % V
R
P
R
-Limit
at 100 % V
R
16361
T
amb
- Ambient Temperature (°C)
16363
T
j
- Junction Temperature (°C)
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
Rev. 2.0, 04-Nov-15
Document Number: 86051
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYW82, BYW83, BYW84, BYW85, BYW86
www.vishay.com
Vishay Semiconductors
100
f = 1 MHz
80
1000
100
C
D
- Diode Capacitance (pF)
100
125
150
175
V
R
= V
RRM
I
R
- Reverse Current (µA)
60
40
10
20
1
25
16362
0
50
75
0.1
16364
1
10
100
T
j
- Junction Temperature (°C)
V
R
- Reverse Voltage (V)
Fig. 5 - Reverse Current vs. Junction Temperature
Fig. 6 - Diode Capacitance vs. Reverse Voltage
Z
thp
- Thermal Resistance for Pulse Cond. (K/W)
1000
100
t
p
/T = 0.5
t
p
/T = 0.2
10
t
p
/T = 0.1
t
p
/T = 0.05
t
p
/T = 0.02
1
10
-4
94 9568
V
RRM
= 1000 V
R
thJA
= 70 K/W
T
amb
= 25°C
45 °C
t
p
/T = 0.01
70°C
100°C
60 °C
10
-3
10
-2
10
-1
10
0
10
1
10
-1
t
p
- Pulse Length (s)
10
0
10
1
I
FRM
- Repetitive Peak
Forward Current (A)
Fig. 7 - Thermal Response
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-64
Sintered Glass Case
SOD-64
Cathode Identification
4.3 (0.168) max.
1.35 (0.053) max.
26(1.014) min.
4 (0.156) max.
26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
Rev. 2.0, 04-Nov-15
Document Number: 86051
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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Revision: 08-Feb-17
1
Document Number: 91000