SILICON TRANSISTOR
UPA895TD
(Units in mm)
NPN SILICON RF
TWIN TRANSISTOR
FEATURES
•
•
•
•
•
LOW VOLTAGE, LOW CURRENT OPERATION
SMALL PACKAGE OUTLINE:
LOW HEIGHT PROFILE:
1
OUTLINE DIMENSIONS
Package Outline TD
(TOP VIEW)
1.0±0.05
0.8
+0.07
-0.05
(Top View)
C1
E1
C2
1
2
3
Q2
Q1
6
5
4
B1
E2
B2
1.2 mm x 0.8 mm
0.4
TWO LOW NOISE OSCILLATOR TRANSISTORS:
1.2
+0.07
-0.05
3
4
IDEAL FOR 1-3 GHz OSCILLATORS
NE851
2
0.8
0.4
5
0.15±0.05
6
Just 0.50 mm high
KP
DESCRIPTION
The UPA895TD contains two NE851 high frequency silicon
bipolar chips. The NE851 is an excellent oscillator chip, featur-
ing low 1/f noise and high immunity to pushing effects. The
new ultra small TD package is ideal for all portable wireless
applications where reducing board space is a prime consider-
ation. Each transistor chip is independently mounted and
easily configured for oscillator/buffer amplifier and other
applications.
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
0.5±0.05
ORDERING INFORMATION
PART NUMBER
UPA895TD-T3-A
QUANTITY
10K Pcs./Reel
PACKAGING
Tape & Reel
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
I
EBO
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current
Feedback
Gain
1
at
V
CE
= 3 V, I
C
= 7 mA
GHz
pF
dB
dB
dB
3.0
4.5
at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Gain Bandwidth at V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
Capacitance
2
Insertion Power Gain at V
CE
= 1 V, I
C
=5 mA, f = 2 GHz
Noise Figure at V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
UNITS
nA
nA
100
5.0
120
6.5
0.6
4.0
5.5
1.9
2.5
0.8
MIN
UPA895TD
TD
TYP
MAX
600
600
145
Q1 And Q2
h
FE
f
T
|S
21E
|
2
NF
Cre
|S
21
|S
21E
|
2E
|
2
Insertion Power GainIat V
CE
= 1 V, I
C
=15 mA, f = 2 GHz
Notes: 1. Pulsed measurement, pulse width
≤
350
μs,
duty cycle
≤
2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to
guard pin of capacitances meter.
0.125
+0.1
-0.05
UPA895TD
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T
T
J
T
STG
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
2
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
RATINGS
Q1
9
5.5
1.5
100
Q2
9
1.5
100
5.5
6
V
CE
= 2 V
f = 2 GHz
5
15
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
18
4
G
a
3
12
mW 190 for 1 element
210 for 2 elements
°C
150
150
°C
-65 to +150
9
2
NF
6
Note: 1. Operation in excess of any one of these parameters may
result in permanent damage.
2. Mounted on 1.08cm
2
x 1.0 mm(t) glass epoxy substrate.
1
3
0
1
10
0
100
Collector Current, I
C
(mA)
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
REVERSE TRANSFR CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance, C
re
(pF)
300
1.0
f = 1 MHz
Total Power Dissipation, P
tot
(mW)
Mounted on Glass Epoxy PCB
(1.08 cm
2
x 1.0 mm (t) )
250
210
190
180
0.8
200
2 Elements
0.6
150
0.4
100
1 Element
50
0.2
0
25
50
75
100
125
150
0
2
4
6
8
10
Ambient Temperature, T
A
(°C)
Collector to Base Voltage, V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
V
CE
= 1 V
100
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 2 V
Collector Current, I
C
(mA)
1
Collector Current, I
C
(mA)
10
10
1
0.1
0.1
0.01
0.01
0.001
0.001
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage, V
BE
(V)
Base to Emitter Voltage, V
BE
(V)
Associated Gain, G
a
(dB)
Noise Figure, NF (dB)
UPA895TD
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
60
10
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
V
CE
= 2 V
f = 2 GHz
8
50
360
µa
320
µa
40
280
µa
240
µa
Gain Bandwidth Product, f
T
(GHz)
8
400
µa
Collector Current, I
C
(mA)
6
30
200
µa
160
µa
120
µa
4
20
10
80
µa
I
B
= 40
µa
2
0
1
2
3
4
5
6
7
0
1
10
100
Collector to Emitter Voltage, V
CE
(V)
Collector Current, I
C
(mA)
DC CURRENT GAIN
vs. COLLECTOR CURRENT
1000
V
CE
= 1 V
1000
DC CURRENT GAIN
vs. COLLECTOR CURRENT
V
CE
= 2 V
DC Current Gain, H
FE
DC Current Gain, H
FE
100
100
10
0.1
1
10
100
10
0.1
1
10
100
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
V
CE
= 1 V
I
C
= 5 mA
30
25
MSG
20
MAG
15
10
5
|S
21e
|
2
0
0.1
1
10
V
CE
= 1 V
I
C
= 15 mA
30
25
20
15
10
5
0
0.1
|S
21e
|
2
MSG
MAG
1
10
Frequency, f (GHz)
Frequency, f (GHz)
UPA895TD
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
V
CE
= 2 V
I
C
= 5 mA
30
25
MSG
20
15
10
5
|S
21e
|
2
0
0.1
1
10
MAG
V
CE
= 1 V
f = 1 GHz
MSG
MAG
15
|S
21e
|
2
10
5
0
1
10
100
Frequency, f (GHz)
Collector Current, I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
15
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
15
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Gain, MAG(dB)
V
CE
= 1 V
f = 2 GHz
MAG
V
CE
= 2 V
f = 2 GHz
MAG
10
10
5
|S
21e
|
2
5
|S
21e
|
2
0
0
-5
1
10
100
-5
1
10
100
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
V
CE
= 1 V
f = 1 GHz
5
G
a
15
5
18
6
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
18
V
CE
= 1 V
f = 2 GHz
15
Associated Gain, G
a
(dB)
4
12
4
G
a
3
12
3
9
9
2
6
2
NF
6
1
NF
3
1
3
0
1
10
0
100
0
1
10
0
100
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Associated Gain, G
a
(dB)
Noise Figure, NF (dB)
Noise Figure, NF (dB)
UPA895TD
TYPICAL SCATTERING PARAMETERS
Q1
j50
j25
j100
+135º
S
21
S
12
+45º
Q1
+90º
j10
S
11
0
10
25
50
100
+180º
S
21
.2
.4
.6
.8
1
+0º
-j10
S
22
-135º
-45º
-j25
-j50
-j100
-90º
UPA895TD Q1
V
CE
= 1 V, I
C
= 5 mA
Frequency
GHz
0.100
0.200
0.300
0.400
0.500
0.600
0.700
0.800
0.900
1.000
1.100
1.200
1.300
1.400
1.500
1.600
1.700
1.800
1.900
2.000
2.100
2.200
2.300
2.400
2.500
2.600
2.700
2.800
2.900
2.950
3.000
MAG
0.834
0.782
0.729
0.701
0.682
0.674
0.667
0.667
0.666
0.669
0.670
0.671
0.673
0.675
0.677
0.679
0.683
0.686
0.691
0.695
0.702
0.706
0.711
0.716
0.720
0.723
0.726
0.730
0.732
0.734
0.735
S
11
ANG
-40.0
-74.1
-98.7
-116.6
-129.7
-139.9
-148.0
-154.6
-160.1
-165.0
-169.2
-172.9
-176.3
-179.3
177.8
175.2
172.7
170.4
168.3
166.4
164.5
162.8
161.3
159.8
158.4
157.2
156.1
154.9
153.9
153.5
152.9
MAG
13.251
11.289
9.275
7.696
6.501
5.593
4.892
4.344
3.899
3.542
3.237
2.981
2.760
2.569
2.400
2.252
2.120
2.003
1.899
1.802
1.717
1.635
1.565
1.496
1.433
1.373
1.320
1.269
1.224
1.202
1.180
S
21
ANG
154.1
135.3
121.5
111.6
104.1
98.1
93.1
88.7
84.8
81.2
77.8
74.7
71.7
68.8
66.1
63.5
61.0
58.6
56.3
54.1
51.9
49.7
47.8
45.8
43.9
42.1
40.4
38.7
37.3
36.5
35.8
MAG
0.032
0.054
0.065
0.071
0.075
0.077
0.079
0.080
0.081
0.082
0.083
0.084
0.085
0.086
0.088
0.090
0.092
0.094
0.097
0.100
0.104
0.108
0.112
0.117
0.121
0.126
0.132
0.138
0.144
0.147
0.150
S
12
ANG
68.0
53.1
43.8
38.0
34.8
33.1
32.3
32.3
32.8
33.7
34.8
36.3
37.8
39.6
41.6
43.5
45.6
47.6
49.6
51.5
53.3
55.0
56.5
57.9
59.2
60.3
61.4
62.4
63.2
63.6
63.9
MAG
0.911
0.769
0.643
0.552
0.488
0.444
0.411
0.388
0.371
0.358
0.348
0.341
0.335
0.332
0.330
0.330
0.332
0.335
0.339
0.345
0.351
0.358
0.366
0.374
0.382
0.391
0.401
0.411
0.420
0.425
0.431
S
22
ANG
-19.3
-33.0
-40.9
-45.7
-48.7
-51.0
-53.0
-55.0
-57.1
-59.4
-61.9
-64.3
-67.1
-69.9
-72.8
-76.0
-79.1
-82.3
-85.6
-88.9
-92.1
-95.2
-98.4
-101.2
-104.0
-106.6
-109.2
-111.5
-113.9
-115.1
-116.1
K
0.124
0.174
0.262
0.338
0.417
0.488
0.563
0.628
0.697
0.751
0.817
0.873
0.930
0.981
1.028
1.069
1.100
1.122
1.130
1.140
1.131
1.127
1.113
1.102
1.088
1.076
1.059
1.040
1.023
1.011
1.002
MAG
1
(dB)
26.11
23.24
21.56
20.34
19.39
18.61
17.93
17.35
16.83
16.36
15.93
15.51
15.12
14.74
13.35
12.40
11.72
11.15
10.72
10.28
9.99
9.64
9.41
9.14
8.92
8.68
8.52
8.44
8.37
8.49
8.68
Note:
1. Gain Calculations:
MAG =
|S
21
|
|S
12
|
(
K
±
K
2
- 1
).
When K
≤
1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S
21
|
, K = 1 + |
∆
| - |S
11
| - |S
22
|
,
∆
= S
11
S
22
- S
21
S
12
|S
12
|
2 |S
12
S
21
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
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