Operating Temperature Range ............................-40ºC to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range ............................ -65°C to +150°C
Soldering Temperature (reflow) (Note 2) ......................... +260°C
Note 1:
LX_ has internal silicon diodes to GND_ and OUT_. It is normal for these diodes to briefly conduct during LX_ transitions.
Avoid steady state conduction of these diodes.
Note 2:
This device is constructed using a unique set of packaging techniques that impose a limit on the thermal profile that the
device can be exposed to during board level solder attach and rework. This limit permits only the use of the solder pro-
files recommended in the industry-standard specification JEDEC 020A, paragraph 7.6, Table 3 for IR/VPR and Convection
reflow. Preheating is required. Hand or wave soldering is not allowed.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Package Thermal Characteristics (Note 3)
WLP
Junction-to-Ambient Thermal Resistance (θ
JA
) ..........83°C/W
Junction-to-Case Thermal Resistance (θ
JC
) ...............50°C/W
Note 3:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
Electrical Characteristics
(V
IN
= 2.6V, T
A
= -40NC to +85NC, unless otherwise noted. Typical values are T
A
= +25NC.) (Note 4)
PARAMETER
Operating Input Voltage Range
Minimum Startup Voltage
Undervoltage Lockout Threshold (UVLO)
Shutdown Supply Current
Thermal Shutdown Temperature
BOOST MODE
Peak Output Current
V
IN
> 2.5V, pulse loading (Note 5)
V
OUT
= 3.3V
V
OUT
= 3.5V
V
OUT
= 3.7V
Minimum Continuous Output Current
V
IN
> 2.5V (Note 5)
V
OUT
= 4.25V
V
OUT
= 5.0V
V
OUT
= 5.5V
V
OUT
= 5.7V
Switching Frequency
(Note 6)
1
0.9
0.8
0.7
0.7
0.7
0.7
0.6
3
MHz
A
A
V
IN
falling, 75mV hysteresis
V
EN
= V
TREN
= V
OUT
= 0V,
V
IN
= 4.8V
T
J
rising, 20NC hysteresis
T
A
= +25NC
T
A
= +85NC
2.1
CONDITIONS
MIN
2.5
2.3
2.2
0.8
1
+165
2.3
5
TYP
MAX
5.5
UNITS
V
V
V
FA
NC
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Maxim Integrated
│
2
MAX8969
Step-Up Converter for Handheld Applications
Electrical Characteristics (continued)
(V
IN
= 2.6V, T
A
= -40NC to +85NC, unless otherwise noted. Typical values are T
A
= +25NC.) (Note 4)
PARAMETER
CONDITIONS
No load, V
OUT
_
TARGET
= 3.3V
No load, V
OUT
_
TARGET
= 3.5V
No load, V
OUT
_
TARGET
= 3.7V
Output Voltage Accuracy
No load, V
OUT
_
TARGET
= 4.25V
No load, V
OUT
_
TARGET
= 5V
No load, V
OUT
_
TARGET
= 5.5V
No load, V
OUT
_
TARGET
= 5.7V
2.5V < V
IN
< V
ATMRT
, conditions emulating 0 <
I
OUT
< 1A, C
OUT
= 22FF, L = 1FH,
V
OUT
_
TARGET
= 3.3V
2.5V < V
IN
< V
ATMRT
, conditions emulating 0 <
I
OUT
< 1A, C
OUT
= 22FF, L = 1FH,
V
OUT
_
TARGET
= 3.5V
2.5V < V
IN
< V
ATMRT
, conditions emulating 0 <
I
OUT
< 1A, C
OUT
= 22FF, L = 1FH,
V
OUT
_
TARGET
= 3.7V
Steady-State Output Voltage
2.5V < V
IN
< V
ATMRT
, conditions emulating 0 <
I
OUT
< 600mA, C
OUT
= 22FF, L = 1FH,
V
OUT
_
TARGET
= 4.25V
2.5V < V
IN
< V
ATMRT
, conditions emulating 0 <
I
OUT
< 500mA, C
OUT
= 22FF, L = 1FH,
V
OUT
_
TARGET
= 5V
2.5V < V
IN
< V
ATMRT
, conditions emulating 0 <
I
OUT
< 400mA, C
OUT
= 22FF, L = 1FH,
V
OUT
_
TARGET
= 5.5V
2.5V < V
IN
< V
ATMRT
, conditions emulating 0 <
I
OUT
< 400mA, C
OUT
= 22FF, L = 1FH,
V
OUT
_
TARGET
= 5.7V
LX_ Leakage Current
Skip-Mode Supply Current
pMOS Turn-Off Current (Zero-Cross Current)
LX_ nMOS Current Limit
Maximum Duty Cycle
Minimum Duty Cycle
0
2.1
V
LX
= 0V, 4.8V
T
A
= +25NC
T
A
= +85NC
MIN
3.175
3.40
3.64
4.10
4.85
5.39
5.53
3.00
TYP
3.30
3.50
3.75
4.25
5.00
5.5
5.7
MAX
3.40
3.60
3.85
4.35
5.10
5.65
5.81
3.45
V
UNITS
3.15
3.65
3.35
3.85
3.95
4.35
V
4.50
5.10
5.00
5.65
5.13
0.1
0.2
45
10
2.6
83
5.81
5
FA
FA
mA
EN = high, I
OUT
= 0A, 1FH inductor (TREN is
low, not switching)
3.2
A
%
%
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Maxim Integrated
│
3
MAX8969
Step-Up Converter for Handheld Applications
Electrical Characteristics (continued)
(V
IN
= 2.6V, T
A
= -40NC to +85NC, unless otherwise noted. Typical values are T
A
= +25NC.) (Note 4)
PARAMETER
V
OUT
= 3.3V
V
OUT
= 3.5V
V
OUT
= 3.7V
pMOS On-Resistance
V
OUT
= 4.25V
V
OUT
= 5V
V
OUT
= 5.5V
V
OUT
= 5.7V
V
OUT
= 3.3V
V
OUT
= 3.5V
V
OUT
= 3.7V
nMOS On-Resistance
V
OUT
= 4.25V
V
OUT
= 5V
V
OUT
= 5.5V
V
OUT
= 5.7V
Minimum Output Capacitance for Stable
Operation (Actual)
Minimum P1 Soft-Start Current Limit
Output Voltage Ripple
TRACK MODE
pMOSFET On-Resistance
Track Current Limit
Track Mode Quiescent Current
AUTOMATIC TRACK MODE (ATM)
ATM Supply Current
V
IN
= 5.4V
V
OUT
_
TARGET
= 3.3V
V
OUT
_
TARGET
= 3.5V
V
OUT
_
TARGET
= 3.7V
ATM V
IN
Rising Threshold (V
ATMRT)
V
OUT
_
TARGET
= 4.25V
V
OUT
_
TARGET
= 5V
V
OUT
_
TARGET
= 5.5V
V
OUT
_
TARGET
= 5.7V
65
3.15
3.35
3.55
4.04
4.74
5.28
5.44
V
FA
I
OUT
= 500mA, V
IN
= 2.7V
I
OUT
= 500mA, V
IN
= 3.2V
V
OUT
= 3.6V
EN = low, TREN = high
1
130
110
2
30
mI
A
FA
V
OUT
= 5V
I
OUT
= 150mA, circuit of Figure 1
CONDITIONS
MIN
TYP
120
115
110
100
91
79
77
65
63
60
55
51
43
42
8
0.48
20
FF
A
mV
P-P
mI
mI
MAX
UNITS
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Maxim Integrated
│
4
MAX8969
Step-Up Converter for Handheld Applications
Electrical Characteristics (continued)
(V
IN
= 2.6V, T
A
= -40NC to +85NC, unless otherwise noted. Typical values are T
A
= +25NC.) (Note 4)
PARAMETER
CONDITIONS
V
OUT
_
TARGET
= 3.3V
V
OUT
_
TARGET
= 3.5V
V
OUT
_
TARGET
= 3.7V
ATM V
IN
Falling Threshold (V
ATMFT)
V
OUT
_
TARGET
= 4.25V
V
OUT
_
TARGET
= 5V
V
OUT
_
TARGET
= 5.5V
V
OUT
_
TARGET
= 5.7V
Boost to ATM Transition Time (t
ATM_
ENTER
)
ATM to Boost Transition Time (t
ATM_EXIT
)
LOGIC CONTROL
EN, TREN Logic Input High Voltage
EN, TREN Logic Input Low Voltage
EN, TREN Leakage Current
2.3V < V
IN
< 5.5V
2.3V < V
IN
< 5.5V
V
EN
= V
TREN
= 0V
T
A
= +25NC
T
A
= +85NC
-1
0.01
0.1
1.05
0.4
+1
V
V
FA
(Note 6)
MIN
TYP
3.10
3.29
3.5
3.99
4.69
5.23
5.39
1
1
Fs
Fs
V
MAX
UNITS
Note 4:
Specifications are 100% production tested at T
A
= +25°C. Limits over the operating temperature range are guaranteed by
design and characterization.
Note 5:
The device supports a peak output current of 1A. Continuous operation with 1A output current at elevated temperature is not
guaranteed. With sustained high current (> 100ms, > 1A), the junction temperature (T
J
) rises to the thermal shutdown thresh-
old. The stated Minimum Continuous Output Current values represent what the typical operating circuit can achieve when
considering device and component variations. See the
Output Current
section for more information.
Note 6:
Switching frequency decreases if input voltage is > 83% of the output voltage selected. This allows duty factor to drop to
values necessary to boost output voltage less than 25% without the use of pulse widths less than 60ns.
射频识别(Radio Frequency Identification，RFID)技术是一种利用无线射频通信实现的非接触式自动识别技术，与目前广泛采用的条形码技术相比，RFID具有容量大、识别距离远、穿透能力强、抗污性强等特点。RFID技术已经发展得比较成熟并获得了大规模商用，但超高频RFID技术相对滞后。本文分析了射频芯片nRF9E5的功能特性，并将其用于RFID系统中，设计了一套有源超高频(...[详细]
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