Supertex inc.
Features
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TN2540
N-Channel Enhancement-Mode
Vertical DMOS FET
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Low threshold (2.0V max.)
High input impedance
Low input capacitance (125pF max.)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Applications
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Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog and Telecom switches
General purpose line drivers
Ordering Information
Part Number
TN2540N3-G
TN2540N3-G P002
TN2540N3-G P003
TN2540N3-G P005
TN2540N3-G P013
TN2540N3-G P014
TN2540N8-G
Package Options
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
TO-243AA (SOT-89)
Packing
1000/Bag
2000/Reel
2000/Reel
2000/Reel
2000/Reel
2000/Reel
2000/Reel
Product Summary
BV
DSS
/BV
DGS
400V
R
DS(ON)
(max)
I
D(ON)
(min)
V
GS(th)
(max)
12Ω
1.0A
2.0V
Pin Configuration
DRAIN
-G denotes a lead (Pb)-free / RoHS compliant package
Refer to ‘P0xx’ Tape & Reel Specs for P002, P003, P005, P013, and P014 TO-92
Taping Specifications and Winding Styles
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
DRAIN
SOURCE
GATE
SOURCE
DRAIN
GATE
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Value
BV
DSS
BV
DGS
±20V
-55
O
C to +150
O
C
TO-92
TO-243AA (SOT-89)
Product Marking
SiTN
2540
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Package may or may not include the following marks: Si or
TO-92
TN5DW
Typical Thermal Resistance
Package
TO-92
TO-243AA (SOT-89)
Doc.# DSFP-TN2540
A062113
θ
ja
132 C/W
O
W = Code for week sealed
= “Green” Packaging
TO-243AA (SOT-89)
Package may or may not include the following marks: Si or
133
O
C/W*
* Mounted on FR5 Board, 25mm x 25mm x 1.57mm
Supertex inc.
www.supertex.com
TN2540
Thermal Characteristics
Package
TO-92
TO-243AA (SOT-89)
(continuous)
I
D
†
(pulsed)
I
D
Power Dissipation
@T
A
= 25
O
C
I
DR
†
175mA
260mA
I
DRM
2.0A
1.8A
175mA
260mA
2.0A
1.8A
1.0W
1.6W
‡
Notes:
† I
D
(continuous) is limited by max rated T
j
.
‡ Mounted on FR5 Board, 25mm x 25mm x 1.57mm.
Electrical Characteristics
(T
Sym
BV
DSS
V
GS(th)
ΔV
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Parameter
Gate threshold voltage
A
= 25
O
C unless otherwise specified)
Min
400
0.6
-
-
-
Typ
-
-
-2.5
-
-
-
0.5
1.0
8.0
8.0
-
200
95
20
10
-
-
-
-
-
300
Max
-
2.0
-4.0
100
10
1.0
-
-
12
12
0.75
-
125
70
25
20
15
25
20
1.8
-
Units
V
V
nA
µA
mA
A
Ω
%/
O
C
Conditions
V
GS
= 0V, I
D
= 100µA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= ± 20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125°C
V
GS
= 4.5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 4.5V, I
D
= 150mA
V
GS
= 10V, I
D
= 500mA
V
GS
= 10V, I
D
= 500mA
V
GS
= 0V,
V
DS
= 25V,
f = 1.0MHz
V
DD
= 25V,
I
D
= 1.0A,
R
GEN
= 25Ω
Drain-to-source breakdown voltage
Change in V
GS(th)
with temperature
Gate body leakage
Zero gate voltage drain current
mV/
O
C V
GS
= V
DS
, I
D
= 1.0mA
-
0.3
0.75
-
-
-
125
-
-
-
-
-
-
-
-
-
On-state drain current
Static drain-to-source on-state resistance
Change in R
DS(ON)
with temperature
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
mmho V
DS
= 25V, I
D
= 100mA
pF
ns
V
ns
V
GS
= 0V, I
SD
= 200mA
V
GS
= 0V, I
SD
= 1.0A
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
90%
10%
t
(ON)
VDD
Pulse
Generator
R
L
OUTPUT
INPUT
0V
t
(OFF)
t
r
t
d(OFF)
t
f
10%
90%
90%
R
GEN
t
d(ON)
VDD
OUTPUT
0V
Doc.# DSFP-TN2540
A062113
10%
INPUT
D.U.T.
2
Supertex inc.
www.supertex.com
TN2540
Typical Performance Curves
2.0
Output Characteristics
1.0
Saturation Characteristics
V
GS
= 10V
8.0V
6.0V
1.6
V
GS
= 10V
0.8
I
D
(amperes)
1.2
I
D
(amperes)
8V
6V
0.8
0.6
5.0V
5V
0.4
0.4
4.0V
4V
3V
10
20
30
40
50
0.2
3.0V
0.0
0
2
4
6
8
10
0
0
V
DS
(volts)
V
DS
(volts)
1.0
Transconductance vs. Drain Current
V
DS
=15V
Power Dissipation vs. Ambient Temperature
2.0
0.8
TO-243AA
G
FS
(siemens)
P
D
(watts)
0.6
T
A
= -55
O
C
25
O
C
125
O
C
0.2
1.0
TO-92(DC)
0.4
0.0
0.0
0.2
0.4
0.6
0.8
1.0
0
0
25
50
75
100
125
150
I
D
(amperes)
T
A
(
O
C)
10
Maximum Rated Safe Operating Area
Thermal Resistance (normalized)
1.0
Thermal Response Characteristics
TO-243AA
P
D
= 1.6W
T
C
= 25
O
C
1.0
TO-243AA(pulsed)
0.8
I
D
(amperes)
0.6
0.1
TO-243AA(DC)
0.4
0.01
TO-92(DC)
0.2
0.001
0.1
1.0
10
100
0
0.001
0.01
0.1
1.0
10
V
DS
(volts)
t
p
(seconds)
Doc.# DSFP-TN2540
A062113
3
Supertex inc.
www.supertex.com
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