BYT51A, BYT51B, BYT51D, BYT51G, BYT51J, BYT51K, BYT51M
www.vishay.com
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
949539
MECHANICAL DATA
Case:
SOD-57
Terminals:
plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity:
color band denotes cathode end
Mounting position:
any
Weight:
approx. 369 mg
APPLICATIONS
• Rectification diode
ORDERING INFORMATION
(Example)
DEVICE NAME
BYT51M
BYT51M
ORDERING CODE
BYT51M-TR
BYT51M-TAP
TAPED UNITS
5000 per 10" tape and reel
5000 per ammopack
MINIMUM ORDER QUANTITY
25 000
25 000
PARTS TABLE
PART
BYT51A
BYT51B
BYT51D
BYT51G
BYT51J
BYT51K
BYT51M
TYPE DIFFERENTIATION
V
R
= 50 V; I
F(AV)
= 1.5 A
V
R
= 100 V; I
F(AV)
= 1.5 A
V
R
= 200 V; I
F(AV)
= 1.5 A
V
R
= 400 V; I
F(AV)
= 1.5 A
V
R
= 600 V; I
F(AV)
= 1.5 A
V
R
= 800 V; I
F(AV)
= 1.5 A
V
R
= 1000 V; I
F(AV)
= 1.5 A
PACKAGE
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
BYT51A
BYT51B
Reverse voltage
= repetitive peak reverse voltage
BYT51D
See electrical characteristics
BYT51G
BYT51J
BYT51K
BYT51M
Peak forward surge current
Repetitive peak forward current
Average forward current
Junction and storage temperature range
Non repetitive reverse avalanche energy
l
(BR)R
= 1 A
l = 10 mm
On PC board
t
p
= 10 ms, half sine wave
SYMBOL
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
FRM
I
F(AV)
I
F(AV)
T
j
= T
stg
E
R
VALUE
50
100
200
400
600
800
1000
50
9
1.5
1
-55 to +175
20
UNIT
V
V
V
V
V
V
V
A
A
A
A
°C
mJ
Rev. 2.0, 04-Nov-15
Document Number: 86028
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYT51A, BYT51B, BYT51D, BYT51G, BYT51J, BYT51K, BYT51M
www.vishay.com
Vishay Semiconductors
MAXIMUM THERMAL RESISTANCE
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
Lead length l = 10 mm, T
L
= constant
On PC board with spacing 25 mm
SYMBOL
R
thJA
R
thJA
VALUE
45
100
UNIT
K/W
K/W
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Reverse recovery time
TEST CONDITION
I
F
= 1 A
I
F
= 1 A, T
j
= 175 °C
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 150 °C
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
SYMBOL
V
F
V
F
I
R
I
R
t
rr
MIN.
-
-
-
-
-
TYP.
0.95
-
-
-
-
MAX.
1.1
1
1
100
4
UNIT
V
V
μA
μA
μs
TYPICAL CHARACTERISTICS
(T
amb
= 25
C,
unless otherwise specified)
R
thJA
- Ther. Resist. Junction/Ambient (K/W)
120
1.6
I
FAV
- Average Forward Current (A)
l
100
80
l
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
R
thJA
= 100 K/W
PCB: d = 25 mm
R
thJA
= 45 K/W
l = 10 mm
T
L
= constant
60
40
20
0
0
949101
5
10
15
20
25
30
16324
0
20
40
60
80 100 120 140 160 180
l - Lead Length (mm)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
Fig. 3 - Max. Average Forward Current vs.
Ambient Temperature
10
1000
V
R
= V
RRM
1
T
j
= 175 °C
0.1
T
j
= 25 °C
0.01
I
R
- Reverse Current (μA)
1.6
2.0
I
F
- Forward Current (A)
100
10
0.001
0
16323
1
0.4
0.8
1.2
25
16325
50
75
100
125
150
175
V
F
- Forward Voltage (V)
T
j
- Junction Temperature (°C)
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 4 - Reverse Current vs. Junction Temperature
Rev. 2.0, 04-Nov-15
Document Number: 86028
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYT51A, BYT51B, BYT51D, BYT51G, BYT51J, BYT51K, BYT51M
www.vishay.com
Vishay Semiconductors
P
R
- Reverse Power Dissipation (mW)
350
V
R
= V
RRM
300
250
P
R
- Limit at 100 % V
R
200
150
P
R
- Limit at 80 % V
R
100
50
0
25
50
75
100
125
150
175
45
C
D
- Diode Capacitance (pF)
40
35
30
25
20
15
10
5
0
0.1
1
10
f = 1 MHz
100
16326
T
j
- Junction Temperature (°C)
16327
V
R
- Reverse Voltage (V)
Fig. 5 - Max. Reverse Power Dissipation vs.
Junction Temperature
Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-57
0.82 (0.032) max.
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
Rev. 2.0, 04-Nov-15
Document Number: 86028
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
3.6 (0.142) max.
20543
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
