Si1302DL
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
R
DS(on)
()
0.480 at V
GS
= 10 V
0.700 at V
GS
= 4.5 V
I
D
(A)
0.64
0.53
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
SC-70 (3-LEADS)
G
1
Marking Code
3
D
KA
XX
YY
Lot Traceability
and Date Code
Part # Code
S
2
Top
View
Ordering Information:
Si1302DL-T1-E3 (Lead (Pb)-free)
Si1302DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
5s
Steady State
30
± 20
0.64
0.51
1.5
0.26
0.31
0.20
- 55 to 150
0.23
0.28
0.18
0.60
0.48
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
t
5
s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
355
380
285
Maximum
400
450
340
Unit
°C/W
Document Number: 71249
S10-2140-Rev. F, 20-Sep-10
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1
Si1302DL
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Symbol
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
Test Conditions
V
DS
= V
GS,
I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 0.6 A
V
GS
= 4.5 V, I
D
= 0.2 A
V
GS
= 15 V, I
D
= 0.6 A
I
S
= 0.23 A, V
GS
= 0 V
Min.
1
Typ
Max.
3
± 100
1
5
Unit
V
nA
µA
A
1.5
0.410
0.600
0.75
0.8
0.86
1.2
1.4
0.480
0.700
S
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Source-Drain Reverse Recovery Time
V
DS
= 15 V, V
GS
= 10 V, I
D
= 0.6 A
0.24
0.08
5
10
15
15
15
30
nC
V
DD
= 15 V, R
L
= 30
I
D
0.5 A, V
GEN
= 10 V, R
g
= 6
I
F
= 0.23 A, dI/dt = 100 A/µs
8
8
7
15
ns
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.0
1.0
0.8
V
GS
= 10
V
thru 4
V
0.8
I
D
- Drain Current (A)
0.6
I
D
- Drain Current (A)
0.6
0.4
3
V
0.2
0.4
T
C
= 125 °C
0.2
25 °C
- 55 °C
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
Transfer Characteristics
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Document Number: 71249
S10-2140-Rev. F, 20-Sep-10
Si1302DL
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.6
1.4
50
60
C
iss
R
DS(on)
- On-Resistance (Ω)
1.2
C - Capacitance (pF)
1.0
0.8
0.6
V
GS
= 10
V
0.4
0.2
0.0
0.0
V
GS
= 4.5
V
40
30
C
oss
C
rss
20
10
0
0.2
0.4
0.6
0.8
1.0
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
10
V
DS
= 15
V
I
D
= 0.6 A
8
1.8
V
GS
= 10
V
I
D
= 0.6 A
Capacitance
V
GS
- Gate-to-Source
Voltage
(V)
1.6
R
DS(on)
- On-Resistance
1.4
6
(Normalized)
1.2
4
1.0
2
0.8
0
0.0
0.2
0.4
0.6
0.8
1.0
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
1
1.8
On-Resistance vs. Junction Temperature
R
DS(on)
- On-Resistance (Ω)
1.5
I
S
- Source Current (A)
1.2
I
D
= 0.6 A
0.9
T
J
= 150 °C
0.6
T
J
= 25 °C
0.3
0.1
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71249
S10-2140-Rev. F, 20-Sep-10
www.vishay.com
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Si1302DL
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.4
5
0.2
I
D
= 250
µA
4
V
GS(th)
Variance
(V)
Power (W)
0.0
3
T
A
= 25 °C
2
- 0.2
- 0.4
1
- 0.6
- 50
0
- 25
0
25
50
75
100
125
150
10
-2
10
-1
1
10
100
600
T
J
- Temperature (°C)
Time (s)
Threshold Voltage
2
1
Duty Cycle = 0.5
Single Pulse Power
Normalized
Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
P
DM
t
1
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 360 °C/W
t
1
t
2
Single Pulse
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
0.01
10
-4
10
-3
10
-2
10
-1
1
Square
Wave
Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized
Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
Square
Wave
Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?71249.
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Document Number: 71249
S10-2140-Rev. F, 20-Sep-10
Package Information
Vishay Siliconix
SC 70:
3 LEADS
MILLIMETERS
3
E
1
E
1
2
INCHES
Min
0.035
–
0.031
0.010
0.004
0.071
0.071
0.045
e
e
1
D
b
c
A
2
A
L
0.08
c
A
1
Dim
A
A
1
A
2
b
c
D
E
E
1
e
e
1
L
Min
0.90
–
0.80
0.25
0.10
1.80
1.80
1.15
Nom
–
–
–
–
–
2.00
2.10
1.25
0.65BSC
Max
1.10
0.10
1.00
0.40
0.25
2.20
2.40
1.35
Nom
–
–
–
–
–
0.079
0.083
0.049
0.026BSC
Max
0.043
0.004
0.039
0.016
0.010
0.087
0.094
0.053
1.20
0.10
1.30
0.20
7_Nom
1.40
0.30
0.047
0.004
0.051
0.008
7_Nom
0.055
0.012
ECN: S-03946—Rev. C, 09-Jul-01
DWG: 5549
Document Number: 71153
06-Jul-01
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