2N2907A
Small Signal Switching
Transistor
PNP Silicon
Features
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
•
MIL−PRF−19500/291 Qualified
•
Available as JAN, JANTX, and JANTXV
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T
A
= 25°C
Total Device Dissipation @ T
C
= 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
P
T
T
J
, T
stg
Value
−60
−60
−5.0
−600
500
1.0
−65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
mW
W
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
325
150
Unit
°C/W
°C/W
TO−18
CASE 206AA
STYLE 1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
JAN2N2907A
JANTX2N2907A
JANTXV2N2907A
TO−18
Bulk
Package
Shipping
©
Semiconductor Components Industries, LLC, 2013
1
November, 2013 − Rev. 3
Publication Order Number:
2N2907A/D
2N2907A
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= −10 mAdc)
Collector −Emitter Cutoff Current
(V
CE
= −50 Vdc)
Collector−Base Cutoff Current
(V
CB
= −50 Vdc, I
E
= 0)
(V
CB
= −60 Vdc, I
E
= 0)
Emitter−Base Cutoff Current
(V
EB
= −4.0 Vdc)
(V
EB
= −5.0 Vdc)
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= −0.1 mAdc, V
CE
= −10 Vdc)
(I
C
= −1.0 mAdc, V
CE
= −10 Vdc)
(I
C
= −10 mAdc, V
CE
= −10 Vdc)
(I
C
= −150 mAdc, V
CE
= −10 Vdc)
(I
C
= −500 mAdc, V
CE
= −10 Vdc)
Collector −Emitter Saturation Voltage
(I
C
= −150 mAdc, I
B
= −15 mAdc)
(I
C
= −500 mAdc, I
B
= −50 mAdc)
Base −Emitter Saturation Voltage
(I
C
= −150 mAdc, I
B
= −15 mAdc)
(I
C
= −500 mAdc, I
B
= −50 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Magnitude of Small−Signal Current Gain
(I
C
= −20 mAdc, V
CE
= −20 Vdc, f = 100 MHz)
Small−Signal Current Gain
(I
C
= −1.0 mAdc, V
CE
= −10 Vdc, f = 1 kHz)
Output Capacitance
(V
CB
= −10 Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz)
Input Capacitance
(V
EB
= −2.0 Vdc, I
C
= 0, 100 kHz
≤
f
≤
1.0 MHz)
SWITCHING CHARACTERISTICS
Turn−On Time
(Reference Figure in MIL−PRF−19500/291)
Turn−Off Time
(Reference Figure in MIL−PRF−19500/291)
t
on
−
t
off
−
300
45
ns
ns
|h
fe
|
2.0
h
fe
100
C
obo
−
C
ibo
−
30
8.0
pF
−
pF
−
−
−
h
FE
75
100
100
100
50
V
CE(sat)
−
−
V
BE(sat)
−0.6
−
−1.3
−2.6
−0.4
−1.6
Vdc
−
450
−
300
−
Vdc
−
V
(BR)CEO
−60
I
CES
−
I
CBO
−
−
I
EBO
−
−
−50
−10
nAdc
mAdc
−10
−10
nAdc
mAdc
−50
−
nAdc
Vdc
Symbol
Min
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
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2
2N2907A
PACKAGE DIMENSIONS
TO−18 3
CASE 206AA
ISSUE A
B
DETAIL X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN
SIONS A, B, AND T.
DIM
A
B
C
D
E
F
H
J
K
L
M
N
P
R
T
U
MILLIMETERS
MIN
MAX
5.31
5.84
4.52
4.95
4.32
5.33
0.41
0.53
---
0.76
0.41
0.48
0.91
1.17
0.71
1.22
12.70
19.05
6.35
---
45
_
BSC
2.54 BSC
---
1.27
1.37 BSC
---
0.76
2.54
---
INCHES
MIN
MAX
0.209
0.230
0.178
0.195
0.170
0.210
0.016
0.021
---
0.030
0.016
0.019
0.036
0.046
0.028
0.048
0.500
0.750
0.250
---
45
_
BSC
0.100 BSC
---
0.050
0.054 BSC
---
0.030
0.100
---
A
B
P
L
F
C
A
K
E
T
NOTE 7
SEATING
PLANE
U
U
R
NOTE 5
D
NOTES 4 & 6
0.007 (0.18MM) A B
S
C
3X
DETAIL X
M
N
H
1
2
3
M
C
J
LEAD IDENTIFICATION
DETAIL
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor
and
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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5
2N2907A/D
Microchip MCU
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