VS-6CWQ06FNPbF
Vishay Semiconductors
Schottky Rectifier, 2 x 3.5 A
Base
common
cathode
4
FEATURES
• Popular D-PAK outline
• Center tap configuration
• Small foot print, surface mountable
• Low forward voltage drop
D-PAK (TO-252AA)
2
Common
cathode
1
3
Anode
Anode
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
Diode variation
E
AS
D-PAK (TO-252AA)
2 x 3.5 A
60 V
See Electrical table
30 mA at 125 °C
150 °C
Common cathode
6 mJ
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION
The VS-6CWQ06FNPbF surface mount, center tap,
Schottky rectifier series has been designed for applications
requiring low forward drop and small foot prints on PC
board. Typical applications are in disk drives, switching
power supplies, converters, freewheeling diodes, battery
charging, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
3 Apk, T
J
= 25 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
7
60
490
0.61
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-6CWQ06FNPbF
60
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
per leg
I
F(AV)
per device
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1 A, L = 12 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated
load condition and with
rated V
RRM
applied
50 % duty cycle at T
C
= 133 °C, rectangular waveform
7
A
490
70
6
1
mJ
A
SYMBOL
TEST CONDITIONS
VALUES
3.5
UNITS
Document Number: 94249
Revision: 14-Jan-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VS-6CWQ06FNPbF
Vishay Semiconductors
Schottky Rectifier, 2 x 3.5 A
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward
voltage drop per leg
See fig. 1
Maximum reverse
leakage current per leg
See fig. 2
Threshold voltage
Forward slope resistance
Typical junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
SYMBOL
3A
V
FM (1)
6A
3A
6A
I
RM
(1)
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
VALUES
0.61
0.76
0.53
0.65
2
UNITS
V
T
J
= 25 °C
V
R
= Rated V
R
T
J
= 125 °C
mA
30
0.38
34.31
145
5.0
10 000
V
m
pF
nH
V/μs
V
F(TO)
r
t
C
T
L
S
dV/dt
T
J
= T
J
maximum
V
R
= 5 V
DC
, (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Approximate weight
Marking device
Note
(1)
SYMBOL
T
J (1)
, T
Stg
per leg
per device
R
thJC
TEST CONDITIONS
VALUES
- 40 to 150
UNITS
°C
°C/W
g
oz.
DC operation
See fig. 4
4.70
2.35
0.3
0.01
Case style D-PAK (similar to TO-252AA)
6CWQ06FN
dP
tot
1
------------ < -------------
thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
www.vishay.com
2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94249
Revision: 14-Jan-11
VS-6CWQ06FNPbF
Schottky Rectifier, 2 x 3.5 A
Vishay Semiconductors
100
100
T
J
= 150 °C
I
R
- Reverse Current (mA)
I
F
- Instantaneous
Forward Current (A)
10
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1.0
0.1
T
J
= 50 °C
0.01
T
J
= 25 °C
1.0
0.001
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
0
10
20
30
40
50
60
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
1000
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
0
10
20
30
40
50
60
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
10
P
DM
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t
1
t
2
Single pulse
(thermal resistance)
0.1
0.00001
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1.0
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Document Number: 94249
Revision: 14-Jan-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VS-6CWQ06FNPbF
Vishay Semiconductors
155
150
145
140
135
130
125
120
115
110
Schottky Rectifier, 2 x 3.5 A
Allowable Case Temperature (°C)
3.0
DC
Average Power Loss (W)
2.5
2.0
1.5
1.0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
Square wave (D = 0.50)
80 % rated V
R
applied
DC
0.5
0
See note (1)
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
1
2
3
4
5
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
I
FSM
- Non-Repetitive Surge Current (A)
10 000
1000
At any rated load condition
and with rated V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
www.vishay.com
4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94249
Revision: 14-Jan-11
VS-6CWQ06FNPbF
Schottky Rectifier, 2 x 3.5 A
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
4
5
6
7
8
-
-
-
-
-
-
-
-
6
2
C
3
W
4
Q
5
06
6
FN
7
TRL PbF
8
9
Vishay Semiconductors product
Current rating (7 A)
Center tap configuration-
Package identifier:
W = D-PAK
Schottky “Q” series
Voltage rating (06 = 60 V)
FN = TO-252AA (D-PAK)
None = Tube (50 pieces)
TR = Tape and reel
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
9
-
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95016
www.vishay.com/doc?95059
www.vishay.com/doc?95033
Document Number: 94249
Revision: 14-Jan-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
