电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MMBTA56-7

产品描述Bipolar Transistors - BJT 100V 300mW
产品类别半导体    分立半导体   
文件大小67KB,共3页
制造商Diodes
官网地址http://www.diodes.com/
下载文档 详细参数 全文预览

MMBTA56-7在线购买

供应商 器件名称 价格 最低购买 库存  
MMBTA56-7 - - 点击查看 点击购买

MMBTA56-7概述

Bipolar Transistors - BJT 100V 300mW

MMBTA56-7规格参数

参数名称属性值
产品种类
Product Category
Bipolar Transistors - BJT
制造商
Manufacturer
Diodes
RoHSNo
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
SOT-23-3
Transistor PolarityPNP
ConfigurationSingle
Collector- Emitter Voltage VCEO Max- 80 V
Collector- Base Voltage VCBO- 80 V
Emitter- Base Voltage VEBO- 4 V
Collector-Emitter Saturation Voltage- 0.25 V
Maximum DC Collector Current0.5 A
Gain Bandwidth Product fT50 MHz
最大工作温度
Maximum Operating Temperature
+ 150 C
Continuous Collector Current- 0.5 A
高度
Height
1 mm
长度
Length
3.05 mm
最小工作温度
Minimum Operating Temperature
- 55 C
系列
Packaging
Reel
系列
Packaging
Cut Tape
Pd-功率耗散
Pd - Power Dissipation
300 mW
工厂包装数量
Factory Pack Quantity
3000
宽度
Width
1.4 mm
单位重量
Unit Weight
0.000282 oz

文档预览

下载PDF文档
MMBTA55 / MMBTA56
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Please click here to visit our online spice models database.
Features
Epitaxial Planar Die Construction
Complementary NPN Types Available (MMBTA05 /
MMBTA06)
Ideal for Low Power Amplification and Switching
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
Qualified to AEC-Q101 Standards for High Reliability
A
C
B
B
E
TOP VIEW
SOT-23
Dim
C
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
A
B
C
D
E
G
H
J
K
E
D
G
H
K
J
L
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020d
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
MMBTA55 Marking (See Page 3): K2H, K2G
MMBTA56 Marking (See Page 3): K2G
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
@T
A
= 25°C unless otherwise specified
M
C
L
M
α
All Dimensions in mm
B
E
Maximum Ratings
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
θ
JA
T
j
, T
STG
MMBTA55
-60
-60
-4.0
-500
300
417
MMBTA56
-80
-80
Unit
V
V
V
mA
mW
°C/W
°C
-55 to +150
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
@T
A
= 25°C unless otherwise specified
Symbol
MMBTA55
MMBTA56
MMBTA55
MMBTA56
MMBTA55
MMBTA56
MMBTA55
MMBTA56
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
Min
-60
-80
-60
-80
-4.0
Max
-100
-100
Unit
V
V
V
nA
nA
Test Condition
I
C
= -100μA, I
E
= 0
I
C
= -1.0mA, I
B
= 0
I
E
= -100μA, I
C
= 0
V
CB
= -60V, I
E
= 0
V
CB
= -80V, I
E
= 0
V
CE
= -60V, I
BO
= 0V
V
CE
= -80V, I
BO
= 0V
I
C
= -10mA, V
CE
= -1.0V
I
C
= -100mA, V
CE
= -1.0V
I
C
= -100mA, I
B
= -10mA
I
C
= -100mA, V
CE
= -1.0V
V
CE
= -1.0V, I
C
= -100mA,
f = 100MHz
h
FE
V
CE(SAT)
V
BE(SAT)
f
T
100
50
-0.25
-1.2
V
V
MHz
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
DS30054 Rev. 11 - 2
1 of 3
www.diodes.com
MMBTA55 / MMBTA56
© Diodes Incorporated

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1390  2764  2811  207  1427  41  29  47  51  34 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved