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NVS4409NT1G

产品描述MOSFET NFET SC70 25V/8V 75MA 350
产品类别半导体    分立半导体   
文件大小120KB,共5页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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NVS4409NT1G概述

MOSFET NFET SC70 25V/8V 75MA 350

NVS4409NT1G规格参数

参数名称属性值
产品种类
Product Category
MOSFET
制造商
Manufacturer
ON Semiconductor(安森美)
RoHSDetails
技术
Technology
Si
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
SOT-323-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage25 V
Id - Continuous Drain Current750 mA
Rds On - Drain-Source Resistance249 mOhms
ConfigurationSingle
系列
Packaging
MouseReel
系列
Packaging
Cut Tape
系列
Packaging
Reel
Pd-功率耗散
Pd - Power Dissipation
280 mW
工厂包装数量
Factory Pack Quantity
3000
Transistor Type1 N-Channel
单位重量
Unit Weight
0.000176 oz

文档预览

下载PDF文档
NTS4409N, NVS4409N
Small Signal MOSFET
25 V, 0.75 A, Single, N−Channel,
ESD Protection, SC−70/SOT−323
Features
Advance Planar Technology for Fast Switching, Low R
DS(on)
Higher Efficiency Extending Battery Life
AEC−Q101 Qualified and PPAP Capable
NVS4409N
These Devices are Pb−Free and are RoHS Compliant
http://onsemi.com
V
(BR)DSS
25 V
R
DS(on)
Typ
249 mW @ 4.5 V
299 mW @ 2.7 V
I
D
Max
0.75 A
Applications
Boost and Buck Converter
Load Switch
Battery Protection
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current
Continuous Drain Current
(Note 1)
Power Dissipation (Note 1)
Power Dissipation (Note 1)
Pulsed Drain Current
t<5s
Steady
State
T
A
= 25°C
T
A
= 25°C
T
A
= 75°C
P
D
P
D
I
DM
T
J
,
T
STG
I
S
T
L
Symbol
V
DSS
V
GS
I
D
I
D
Value
25
"8.0
0.75
0.7
0.6
0.28
0.33
3.0
−55
to
+150
0.3
260
25
W
W
A
Unit
V
V
A
A
SC−70 (3−Leads)
Gate
1
3
Drain
Source
2
Top View
Steady State
t
v
5s
t
p
= 10
ms
MARKING DIAGRAM &
PIN ASSIGNMENT
3
Drain
T4 WG
G
1
Gate
2
Source
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 1)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
ESD Rating
Machine Model
°
C
A
°C
V
SC−70/SOT−323
CASE 419
STYLE 8
THERMAL RESISTANCE RATINGS
Rating
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient
t
v
5 s (Note 1)
Symbol
R
qJA
R
qJA
Max
450
375
Unit
°C/W
T4
= Device Code
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
ORDERING INFORMATION
Device
NTS4409NT1G
NVS4409NT1G
Package
SOT−323
(Pb−Free)
SOT−323
(Pb−Free)
Shipping
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2011
October, 2011
Rev. 4
1
Publication Order Number:
NTS4409N/D

 
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