d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 62644
S13-1993-Rev. B, 23-Sep-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA449DJ
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 8.3 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 8.3 A, V
GS
= 0
- 0.8
19
12
12
7
T
C
= 25 °C
- 12
- 30
- 1.2
30
20
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 15 V, R
L
= 1.8
I
D
- 8.3 A, V
GEN
= - 4.5 V, R
g
= 1
V
DD
= - 15 V, R
L
= 1.8
I
D
- 8.3 A, V
GEN
= - 10 V, R
g
= 1
f = 1 MHz
0.6
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 10.4 A
V
DS
= - 15 V, V
GS
= - 4.5 V, I
D
= - 10.4 A
V
DS
= - 15 V, V
GS
= 0 V, f = 1 MHz
2140
168
155
48
23.1
2.5
6.2
3.3
8
10
39
8
26
28
44
8
6.6
16
20
60
16
40
42
66
16
ns
72
35
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
-
5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 6 A
V
GS
= - 4.5 V, I
D
= - 5 A
V
GS
= - 2.5 V, I
D
= - 2 A
V
DS
= - 15 V, I
D
= - 6 A
- 10
0.0155
0.0185
0.0264
31
0.0200
0.0240
0.0380
S
- 0.6
- 30
- 22
3
- 1.5
± 100
-1
- 10
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
For technical questions, contact:
pmostechsupport@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Document Number: 62644
S13-1993-Rev. B, 23-Sep-13
SiA449DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
30
V
GS
= 10 V thru 3V
24
I
D
- Drain Current (A)
I
D
- Drain Current (A)
0.8
1
18
V
GS
= 2 V
12
0.6
T
C
= 25
°C
0.4
6
0.2
T
C
= 125
°C
T
C
= - 55
°C
0
0.45
0.9
1.35
1.8
0
0
0.5
1
1.5
2
V
DS
- Drain-to-Source Voltage (V)
0
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.040
3500
Transfer Characteristics
0.034
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
V
GS
= 2.5 V
0.028
2800
C
iss
2100
0.022
V
GS
= 4.5 V
0.016
V
GS
= 10 V
0.010
0
6
12
18
24
30
1400
700
C
oss
0
0
C
rss
3
6
9
12
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 10.4 A
V
GS
- Gate-to-Source Voltage (V)
8
R
DS(on)
- On-Resistance (Normalized)
V
DS
= 8 V
1.48
1.7
Capacitance
6
1.26
V
GS
= 10 V, 6 A
1.04
V
GS
= 4.5 V, 5 A
4
V
DS
= 9.6 V
V
DS
= 15 V
2
0.82
0
0
10
20
30
40
50
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 62644
S13-1993-Rev. B, 23-Sep-13
For technical questions, contact:
pmostechsupport@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
www.vishay.com
3
SiA449DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.05
I
D
= 6 A
10.0
I
S
- Source Current (A)
T
J
= 150
°C
R
DS(on)
- On-Resistance (Ω)
0.04
0.03
T
J
= 125
°C
0.02
T
J
= 25
°C
0.01
1.0
T
J
= 25
°C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
1.05
On-Resistance vs. Gate-to-Source Voltage
30
25
0.9
20
I
D
= 250 μA
Power (W)
V
GS(th)
(V)
0.75
15
10
0.6
5
0.45
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Single Pulse Power, Junction-to-Ambient
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
100 μs
1 ms
1
10 ms
100 ms
0.1
T
A
= 25
°C
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
BVDSS Limited
10 s, 1s
DC
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
For technical questions, contact:
pmostechsupport@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Document Number: 62644
S13-1993-Rev. B, 23-Sep-13
SiA449DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
28
21
I
D
- Drain Current (A)
14
7
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
24
2
18
1.5
Power (W)
12
Power (W)
0
25
50
75
100
125
150
1
6
0.5
0
T
C
- Case Temperature (°C)
0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power Junction-to-Case
Power Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 62644
S13-1993-Rev. B, 23-Sep-13
For technical questions, contact:
pmostechsupport@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
卡巴斯基的安全研究人员称其发现了如何攻击Intel微处理器的远程攻击代码，据传，这一代码可以通过TCP/IP包和JavaScript代码到达用户系统。 目前受影响的系统包括Windows XP，Vista，Windows Server 2003，Windows Server 2008，Linux甚至是BSD和Mac。但所幸大多数错误可以由Intel和BIOS厂商联合进行修复。 卡...[详细]
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