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CMPT3904E-TR

产品描述Bipolar Transistors - BJT NPN Enhanced Complimentary
产品类别半导体    分立半导体   
文件大小401KB,共3页
制造商Central Semiconductor
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CMPT3904E-TR概述

Bipolar Transistors - BJT NPN Enhanced Complimentary

CMPT3904E-TR规格参数

参数名称属性值
产品种类
Product Category
Bipolar Transistors - BJT
制造商
Manufacturer
Central Semiconductor
RoHSDetails
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
SOT-23-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max40 V
Collector- Base Voltage VCBO60 V
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage200 mV
Maximum DC Collector Current200 mA
Gain Bandwidth Product fT300 MHz
最大工作温度
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min30 at 100 mA, 1 V
高度
Height
0.96 mm
长度
Length
3.05 mm
最小工作温度
Minimum Operating Temperature
- 65 C
系列
Packaging
Reel
系列
Packaging
MouseReel
系列
Packaging
Cut Tape
Pd-功率耗散
Pd - Power Dissipation
350 mW
Factory Pack Quantityczexfxrubtfufqeyreaecuyd3000
宽度
Width
1.4 mm
单位重量
Unit Weight
0.000282 oz

文档预览

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CMPT3904E NPN
CMPT3906E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT COMPLEMENTARY
SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT3904E and
CMPT3906E are Enhanced versions of the CMPT3904
and CMPT3906 complementary switching transistors in
a SOT-23 surface mount package, designed for small
signal switching applications, interface circuit & driver
circuit applications.
ENHANCED SPECIFICATIONS:
BVCBO from 40V min to 60V min. (CMPT3906E)
BVEBO from 5.0V min to 6.0V min. (CMPT3906E)
VCE(SAT) from 0.3V max to 0.2V max. (CMPT3904E)
from 0.4V max to 0.2V max. (CMPT3906E)
hFE from 60 min to 70 min. (CMPT3904E) (CMPT3906E)
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
60
40
6.0
200
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
SOT-23 CASE
MARKING CODE: CMPT3904E: C1AE
CMPT3906E: C2AE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Emitter-Base Voltage
Power Dissipation
Collector-Emitter Voltage
Continuous Collector Current
Operating and Storage Junction Temperature
Thermal Resistance
BVCBO
BVCEO
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
CMPT3904E
SYMBOL
TEST CONDITIONS
MIN
TYP
ICEV
VCE=30V, VEB=3.0V
IC=10µA
IC=1.0mA
IE=10µA
IC=10mA,
IC=50mA,
IB=1.0mA
IB=5.0mA
0.65
90
100
100
70
30
60
40
6.0
115
60
7.5
0.057
0.100
0.75
0.85
240
235
215
110
50
CMPT3906E
TYP
90
55
7.9
0.050
0.100
0.75
0.85
130
150
150
120
55
MAX
50
UNITS
nA
V
V
V
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
0.100
0.200
0.85
0.95
V
V
V
V
hFE
hFE
hFE
hFE
hFE
VBE(SAT)
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=1.0V, IC=0.1mA
VCE=1.0V, IC=1.0mA
VCE=1.0V, IC=10mA
VCE=1.0V, IC=50mA
VCE=1.0V, IC=100mA
300
Enhanced specification
R3 (1-February 2010)

 
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