MJE182
Low voltage high speed switching NPN transistor
Features
■
■
High speed switching
NPN device
Applications
■
■
Audio amplifier
High speed switching applications
Description
This device is an NPN low voltage transistor
manufactured using epitaxial planar technology
and housed in a SOT-32 plastic package. It is
designed for low power audio amplifiers and low
current, high speed switching applications.
Figure 1.
bs
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et
l
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ro
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t(
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so
b
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SOT-32
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t(
Internal schematic diagram
Table 1.
Device summary
Marking
MJE182
Package
SOT-32
Packaging
Tube
Order code
MJE182
August 2011
Doc ID 022074 Rev 1
1/7
www.st.com
7
Electrical ratings
MJE182
1
Electrical ratings
Table 2.
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
TOT
T
stg
T
J
Absolute maximum ratings
Parameter
Collector-emitter voltage (I
B
= 0)
Collector-base voltage (I
E
= 0)
Base-emitter voltage (I
C
= 0)
Collector current
Collector peak current (t
P
< 5 ms)
Base current
Base peak current (t
P
< 5 ms)
Total dissipation at T
c
≤
25 °C
Storage temperature
Total power dissipation at T
c
≤
25 °C
Value
80
100
7
3
6
1
Unit
V
V
V
A
Table 3.
Symbol
R
thJC
R
th-amb
Thermal data
Parameter
Thermal resistance junction-case_max
Thermal resistance junction-ambient_max
bs
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et
l
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P
e
uc
d
s)
t(
O
-
so
b
te
le
r
P
d
o
2
12.5
uc
s)
t(
A
A
A
W
°C
-65 to 150
150
Value
10
83.3
Unit
°C/W
°C/W
2/7
Doc ID 022074 Rev 1
MJE182
Electrical characteristics
2
Electrical characteristics
T
case
= 25 °C unless otherwise specified.
Table 4.
Symbol
I
CBO
V
EBO
V
CEO(sus)(1)
Electrical characteristics
Parameter
Collector cut-off current
(I
E
= 0)
Emitter cut-off current
(I
C
= 0)
Test conditions
V
CB
= 100 V
V
CB
= 100 V, T
c
= 150 °C
V
EB
= 7 V
Min.
Typ.
Max.
0.1
0.1
0.1
Unit
µA
mA
µA
Collector-emitter
I = 10 mA
sustaining voltage (I
B
= 0)
C
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
Base-emitter on voltage
DC current gain
I
C
= 0.5 A
I
C
= 1.5 A
I
C
= 3 A
I
C
= 1.5 A
I
C
= 3 A
I
C
= 0.5 A
I
B
= 50 mA
I
B
= 0.15 A
I
B
= 0.6 A
80
V
CE(sat)
(1)
V
BE(sat) (1)
V
BE(on) (1)
h
FE
f
T
C
CBO
Transistor frequency
Collector-base
capacitance (I
E
=0)
1. Pulse test: pulse duration
≤
300 µs, duty cycle
≤
1.5 %.
bs
O
et
l
o
ro
P
e
uc
d
s)
t(
O
-
I
C
= 0.1 A
I
C
= 0.5 A
I
C
= 1.5 A
so
b
te
le
I
B
= 0.15 A
I
B
= 0.6 A
V
CE
=1 V
V
CE
= 1 V
V
CE
= 1 V
V
CE
= 1 V
ro
P
50
30
12
50
uc
d
s)
t(
0.3
0.9
1.7
1.5
2
1.2
250
V
V
V
V
V
I
C
= 0.1 A
f=10 MHz
V
CB
= 10 V
V
CE
= 10 V
MHz
f= 0.1 MHz
40
pF
Doc ID 022074 Rev 1
3/7
Package mechanical data
MJE182
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at:
www.st.com.
ECOPACK
®
is an ST trademark.
bs
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et
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ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
ro
P
uc
d
s)
t(
4/7
Doc ID 022074 Rev 1
MJE182
Package mechanical data
Table 5.
Dim.
SOT-32 (TO-126) mechanical data
mm.
Min.
Typ.
Max.
2.90
0.88
0.63
11.05
7.80
2.29
4.58
2.54
A
B
B1
D
E
e
e1
L
ØP
Q
Q1
H2
I
2.40
0.64
0.39
10.50
7.40
2.04
4.07
15.30
2.90
3.80
1
Figure 2.
SOT-32 (TO-126) drawing
bs
O
et
l
o
ro
P
e
uc
d
)-
(s
t
b
O
so
2.15
1.27
te
le
r
P
d
o
uc
16
5.08
s)
t(
3.20
1.52
Doc ID 022074 Rev 1
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