PDP TRENCH IGBT
PD-96356
IRG7IA19UPbF
Features
l
l
Key Parameters
V
CE
min
V
CE(ON)
typ. @ I
C
= 30A
I
RP
max @ T
C
= 25°C
T
J
max
C
l
l
l
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
circuits in PDP applications
Low V
CE(on)
and Energy per Pulse (E
PULSETM
)
for improved panel efficiency
High repetitive peak current capability
Lead Free package
360
1.49
170
150
V
V
A
°C
G
E
E
C
G
n-channel
G
Gate
C
Collector
TO-220AB
Full-Pak
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low V
CE(on)
and low E
PULSETM
rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
V
GE
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
NOMINAL
I
RP
@ T
C
= 25°C
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Gate-to-Emitter Voltage
Continuous Collector Current, V
GE
@ 15V
Continuous Collector, V
GE
@ 15V
Nominal Current
Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Max.
±30
30
15
15
170
35
14
0.27
-40 to + 150
Units
V
A
c
W
W/°C
°C
300
Thermal Resistance
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
d
Parameter
Typ.
–––
0.50
—
Max.
3.6
—
Units
°C/W
g
65
—
2.0
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02/22/11
IRG7IA19UPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
CES
∆ΒV
CES
/∆T
J
Collector-to-Emitter Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Min. Typ. Max. Units
360
–––
–––
–––
–––
–––
0.34
1.26
1.41
1.49
1.65
2.12
2.93
1.51
–––
-10
1.0
35
130
–––
–––
62
38
12
15
21
68
88
15
23
84
191
–––
854
1083
–––
–––
1.52
–––
–––
–––
–––
–––
4.7
V
Conditions
V
GE
= 0V, I
CE
= 250µA
V/°C Reference to 25°C, I
CE
= 1mA
V
GE
= 15V, I
CE
= 15A
V
GE
= 15V, I
CE
= 25A
V
V
GE
= 15V, I
CE
V
GE
= 15V, I
CE
V
GE
= 15V, I
CE
V
CE(on)
Static Collector-to-Emitter Voltage
–––
–––
2.2
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
100
–––
–––
Human Body Model
V
GE
= 15V, I
CE
V
GE
= 15V, I
CE
= 25A, T
J
= 150°C
V
e
e
= 30A
e
= 40A
e
= 70A
e
= 120A
e
e
V
GE(th)
∆V
GE(th)
/∆T
J
I
CES
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
V
CE
= V
GE
, I
CE
= 1.0mA
––– mV/°C
V
CE
= 360V, V
GE
= 0V
20
µA V
CE
= 360V, V
GE
= 0V, T
J
= 125°C
200
V
CE
= 360V, V
GE
= 0V, T
J
= 150°C
–––
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
ns
µJ
nA
S
nC
V
GE
= 30V
V
GE
= -30V
V
CE
= 25V, I
CE
= 25A
V
CE
= 200V, I
C
= 25A, V
GE
= 15V
I
C
= 25A, V
CC
= 196V
ns
R
G
= 10Ω, L = 200µH, L
S
= 150nH
T
J
= 25°C
I
C
= 25A, V
CC
= 196V
ns
R
G
= 10Ω, L = 200µH, L
S
= 150nH
T
J
= 150°C
V
CC
= 240V, V
GE
= 15V, R
G
= 5.1Ω
L = 220nH, C= 0.40µF, V
GE
= 15V
V
CC
= 240V, R
G
= 5.1Ω, T
J
= 25°C
L = 220nH, C= 0.40µF, V
GE
= 15V
I
GES
g
fe
Q
g
Q
gc
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
t
st
E
PULSE
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Shoot Through Blocking Time
Energy per Pulse
e
ESD
Machine Model
C
ies
C
oes
C
res
L
C
L
E
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Collector Inductance
Internal Emitter Inductance
–––
–––
–––
–––
–––
V
CC
= 240V, R
G
= 5.1Ω, T
J
= 100°C
Class 1C
(Per JEDEC standard JESD22-A114)
Class B
(Per EIA/JEDEC standard EIA/JESD22-A115)
V
GE
= 0V
1100 –––
57
–––
pF V
CE
= 30V
30
4.5
7.5
–––
–––
–––
nH
ƒ = 1.0MHz
Between lead,
6mm (0.25in.)
from package
and center of die contact
Notes:
Half sine wave with duty cycle <= 0.05, ton=2µsec.
R
q
is measured at T
J
of approximately 90°C.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRG7IA19UPbF
200
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
ICE (A)
200
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
150
150
ICE (A)
100
100
50
50
0
0
2
4
6
8
10
0
0
2
4
6
8
10
VCE (V)
VCE (V)
Fig 1. Typical Output Characteristics @ 25°C
200
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
Fig 2. Typical Output Characteristics @ 75°C
200
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
150
150
ICE (A)
ICE (A)
100
100
50
50
0
0
2
4
6
8
10
0
0
2
4
6
8
10
VCE (V)
VCE (V)
Fig 3. Typical Output Characteristics @ 125°C
200
T J = 25°C
Fig 4. Typical Output Characteristics @ 150°C
10
IC = 25A
8
150
T J = 150°C
VCE (V)
ICE (A)
6
TJ = 25°C
4
TJ = 150°C
100
50
2
0
0
2
4
6
VGE (V)
8
10
12
0
4
8
12
VGE (V)
16
20
Fig 5. Typical Transfer Characteristics
Fig 6. V
CE(ON)
vs. Gate Voltage
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IRG7IA19UPbF
35
30
25
IC (A)
180
160
Repetitive Peak Current (A)
140
120
100
80
60
40
20
ton= 2µs
Duty cycle <= 0.05
Half Sine Wave
20
15
10
5
0
0
25
50
75
T C (°C)
100
125
150
0
25
50
75
100
125
150
Case Temperature (°C)
Fig 7. Maximum Collector Current vs. Case Temperature
1100
V CC = 240V
1000
Energy per Pulse (µJ)
Fig 8. Typical Repetitive Peak Current vs. Case Temperature
1400
L = 220nH
C = variable
100°C
1300
L = 220nH
C = 0.4µF
900
800
700
600
500
160
170
180
190
Energy per Pulse (µJ)
1200
1100
1000
900
800
700
25°C
100°C
25°C
200
210
220
230
190 200 210 220 230 240 250 260 270
VCC, Collector-to-Supply Voltage (V)
IC, Peak Collector Current (A)
Fig 9. Typical E
PULSE
vs. Collector Current
1400
V CC = 240V
1200
Energy per Pulse (µJ)
Fig 10. Typical E
PULSE
vs. Collector-to-Supply Voltage
1000
L = 220nH
t = 1µs half sine
C= 0.4µF
100
C= 0.3µF
100µsec
10µsec
1000
800
IC (A)
C= 0.2µF
600
10
1msec
1
400
200
20
40
60
80
100
120
140
160
TJ, Temperature (ºC)
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
VCE (V)
100
1000
Fig 11. E
PULSE
vs. Temperature
Fig 12. Forrward Bias Safe Operating Area
4
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IRG7IA19UPbF
10000
VGE, Gate-to-Emitter Voltage (V)
VGS = 0V,
f = 1 MHZ
C ies = C ge + C gd, C ce SHORTED
C res = C gc
C oes = C ce + Cgc
16
14
12
10
8
6
4
2
0
IC = 25A
V CES = 240V
V CES = 150V
V CES = 60V
Capacitance (pF)
1000
Cies
100
Coes
Cres
10
0
50
100
150
200
0
10
20
30
40
50
VCE, Collector-toEmitter-Voltage(V)
Q G, Total Gate Charge (nC)
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
10
D = 0.50
Thermal Response ( Z thJC )
1
0.20
0.10
0.05
0.02
0.01
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
τ
1
τ
2
τ
3
τ
4
τ
4
0.1
Ri (°C/W)
0.38124
0.56023
1.19321
1.46677
0.01
τ
J
0.000366
0.001917
0.091553
2.1537
τi
(sec)
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
10
100
0.0001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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